Power module having a switch module for supporting high current densities

1. A power module comprising:

a housing with an interior chamber; and

at least two switch modules mounted within the interior chamber and comprising at least two transistors, the at least two switch modules delivering switching power to a load, wherein at least one of the at least two switch modules supports a current density of at least 10 amperes per cm 2 and handles a voltage greater than 10 kV.

2. The power module of claim 1 further comprising at least two diodes.

3. The power module of claim 2 wherein each diode of the at least two diodes is a body diode.

4. The power module of claim 3 wherein the at least two transistors are connected in parallel with each other and in anti-parallel with the at least two diodes.

5. The power module of claim 3 wherein the at least two transistors and the at least two diodes are formed from silicon carbide.

6. The power module of claim 2 wherein each diode of the at least two diodes is an external diode.

7. The power module of claim 1 wherein the interior chamber is associated with an interior area and the current density is defined as a ratio of maximum average current that the at least one of the at least two switch modules supports to the interior area that is allocated to the at least one of the switch modules.

8. The power module of claim 1 wherein the at least one of the at least two switch modules supports a current density of at least 15 amperes per cm 2 .

9. The power module of claim 1 wherein each of the at least two switch modules forms a portion of a full H-bridge or a half H-bridge.

10. The power module of claim 1 wherein the at least two transistors each comprises:

a drift layer having a first conductivity type;

a well region in the drift layer having a second conductivity type opposite the first conductivity type;

a source region in the well region, the source region having the first conductivity type and defining a channel region in the well region, wherein the source region comprises a lateral source region adjacent the channel region and a plurality of source contact regions extending away from the lateral source region opposite the channel region;

a body contact region having the second conductivity type between at least two of the plurality of source contact regions and in contact with the well region; and

a source ohmic contact that overlaps at least one of the source contact regions and the body contact region, and that does not overlap the lateral source region.

11. The power module of claim 1 wherein the at least two transistors each comprises:

a drift layer having a first conductivity type;

a well region having a second conductivity type that is opposite the first conductivity type;

a source region in the well region, the source region having the first conductivity type;

a body contact region having the second conductivity type in contact with the well region; and

a source ohmic contact that overlaps the source region in a source contact area and that overlaps the body contact region in a body contact region area, wherein a ratio of a minimum dimension n 1 of the source contact area to a minimum dimension w 1 of the well region is greater than 0.2.

12. The power module of claim 1 wherein the at least two transistors each comprises:

a drift layer having a first conductivity type;

a well region having a second conductivity type that is opposite the first conductivity type;

a source region in the well region, the source region having the first conductivity type;

a body contact region having the second conductivity type in contact with the well region; and

a source ohmic contact that overlaps the source region in a source contact area and that overlaps the body contact region in a body contact region area; and

wherein a ratio of a minimum dimension p 1 of the body contact region area to a minimum dimension w 1 of the well region is greater than 0.2.

13. The power module of claim 1 wherein the at least two transistors each has a reverse blocking voltage in excess of 1000 volts and a current density greater than 200 amperes per cm 2 at a current greater than 100 amperes.

14. The power module of claim 1 wherein the at least two transistors each has a reverse blocking voltage of 1000 volts or more and a forward current capability greater than 100 amperes at a forward voltage of 5 volts or less.

15. The power module of claim 1 wherein the at least two transistors are metal-oxide semiconductor field effect transistor devices having a reverse blocking voltage of 1000 volts or more and having a differential on-resistance less than 8 mOhms-cm 2 .

16. The power module of claim 1 wherein the at least two transistors are metal-oxide semiconductor field effect transistor devices having a drain to source voltage that is less than 5 volts and a cell pitch of less than 10 μm and having a forward current capability greater than 80 amperes.

17. The power module of claim 1 wherein the at least two transistors are insulated gate bipolar transistor devices having a blocking voltage of 13 kV or more and a forward current capability of 5 amperes or greater.

18. The power module of claim 1 wherein the at least one of the at least two switch modules supports a current density of 15 amperes per cm 2 .

19. The power module of claim 1 wherein the at least one of the at least two switch modules handles a voltage of 15 kV.

20. A power module comprising:

a housing with an interior chamber;

at least two switch modules mounted within the interior chamber and comprising at least two transistors and at least two diodes, the at least two switch modules delivering switching power to a load, wherein at least one of the switch modules supports a current density of at least 10 amperes per cm 2 and handles a voltage greater than 10 kV.

21. The power module of claim 20 wherein each diode of the at least two diodes is a body diode.

22. The power module of claim 21 wherein each diode of the at least two diodes is an external diode.