Wide bandgap device having a buffer layer disposed over a diamond substrate
View Patent ↗A high power, wide-bandgap device is disclosed that exhibits reduced junction temperature and higher power density during operation and improved reliability at a rated power density. The device includes a diamond substrate for providing a heat sink with a thermal conductivity greater than silicon carbide, a single crystal silicon carbide layer on the diamond substrate for providing a supporting crystal lattice match for wide-bandgap material structures that is better than the crystal lattice match of diamond, and a Group III nitride heterostructure on the single crystal silicon carbide layer for providing device characteristics.
1. A wide bandgap device comprising:
a first layer configured to provide mechanical stability for the wide bandgap device;
a diamond layer on the first layer;
a nitride buffer layer on the diamond layer;
a first nitride layer directly on the nitride buffer layer; and
a second nitride layer directly on the first nitride layer.
2. A wide bandgap device according to claim 1 , wherein the nitride buffer layer comprises Aluminum Nitride.
3. A wide bandgap device according to claim 1 , wherein the first nitride layer comprises Gallium Nitride.
4. A wide bandgap device according to claim 1 , wherein the second nitride layer comprises Aluminum Gallium Nitride.
5. A wide bandgap device according to claim 1 , wherein the wide bandgap device is a high electron mobility transistor.
6. A wide bandgap device according to claim 5 , wherein the wide bandgap device includes source, gate, and drain contacts.
7. A wide bandgap device according to claim 5 , wherein the second nitride layer forms a heterostructure with the first nitride layer.
8. A wide bandgap device according to claim 1 , wherein the first layer is a material other than Aluminum Nitride.
9. A wide bandgap device comprising:
a first layer configured to provide mechanical stability for the wide bandgap device;
a diamond layer on the first layer;
a nitride buffer layer on the diamond layer;
a first nitride layer directly on the nitride buffer layer; and
a second nitride layer directly on the first nitride layer for forming a hetero structure with the first nitride layer.
10. A wide bandgap device according to claim 9 , wherein the nitride buffer layer comprises Aluminum Nitride.
11. A wide bandgap device according to claim 9 , wherein the first nitride layer comprises Gallium Nitride.
12. A wide bandgap device according to claim 9 , wherein the second nitride layer comprises Aluminum Gallium Nitride.
13. A wide bandgap device according to claim 9 , wherein the wide bandgap device includes source, gate, and drain contacts.