Semiconductor die with improved ruggedness
A semiconductor die includes a substrate, a first passivation layer over the substrate, and a second passivation layer over the first passivation layer and the substrate. The substrate has boundaries defined by a substrate termination edge. The first passivation layer is over the substrate such that it terminates at a first passivation termination edge that is inset from the substrate termination edge by a first distance. The second passivation layer is over the first passivation layer and the substrate such that it terminates at a second passivation termination edge that is inset from the substrate termination edge by a second distance. The second distance is less than the first distance such that the second passivation layer overlaps the first passivation layer.
1. A semiconductor die comprising:
a substrate, the substrate comprising boundaries defined by a substrate termination edge;
a first passivation layer over the substrate, the first passivation layer terminating at a first passivation termination edge that is inset from the substrate termination edge by a first distance; and
a second passivation layer over the first passivation layer and the substrate, the second passivation layer terminating at a second passivation termination edge such that the second passivation layer overlaps the first passivation layer and the second passivation layer is directly coupled to the first passivation termination edge.
2. The semiconductor die of claim 1 further comprising a third passivation layer over the second passivation layer and the substrate, the third passivation layer terminating at a third passivation termination edge such that the third passivation layer overlaps the second passivation layer.
3. The semiconductor die of claim 2 wherein the substrate comprises:
an active area in which one or more active devices are provided; and
a barrier region surrounding the active area and configured to electrically isolate the active area from the substrate termination edge, wherein:
the barrier region terminates at a barrier region termination edge that is inset from the substrate termination edge; and
a charge redistribution path is formed by a region between the barrier region termination edge and the substrate termination edge.
4. The semiconductor die of claim 3 wherein the region forming the charge redistribution path is implanted with dopants to increase a conductivity thereof.
5. The semiconductor die of claim 3 wherein the charge redistribution path is coupled to a fixed potential.
6. The semiconductor die of claim 2 further comprising a charge redistribution path, the charge redistribution path comprising a metal layer under the second passivation layer between the first passivation termination edge and the second passivation termination edge.
7. The semiconductor die of claim 6 wherein the charge redistribution path is coupled to a fixed potential.
8. The semiconductor die of claim 1 wherein the substrate comprises:
an active area in which one or more active devices are provided; and
a barrier region surrounding the active area and configured to electrically isolate the active area from the substrate termination edge, wherein:
the barrier region terminates at a barrier region termination edge that is inset from the substrate termination edge; and
a charge redistribution path is formed by a region between the barrier region termination edge and the substrate termination edge.
9. The semiconductor die of claim 8 wherein the region forming the charge redistribution path is implanted with dopants to increase a conductivity thereof.
10. The semiconductor die of claim 8 wherein the charge redistribution path is coupled to a fixed potential.
11. The semiconductor die of claim 1 further comprising a charge redistribution path, the charge redistribution path comprising a metal layer under the second passivation layer between the first passivation termination edge and the second passivation termination edge.
12. The semiconductor die of claim 11 wherein the charge redistribution path is coupled to a fixed potential.
13. A method for manufacturing a semiconductor die comprising:
providing a substrate, the substrate comprising boundaries defined by a substrate termination edge;
providing a first passivation layer over the substrate such that the first passivation layer terminates at a first passivation termination edge that is inset from the substrate termination edge by a first distance; and
providing a second passivation layer over the first passivation layer and the substrate such that the second passivation layer terminates at a second passivation termination edge such that the second passivation layer overlaps the first passivation layer and the second passivation layer is directly coupled to the first passivation termination edge.
14. The method of claim 13 further comprising providing a third passivation layer over the second passivation layer and the substrate, the third passivation layer terminating at a third passivation termination edge such that the third passivation layer overlaps the second passivation layer.
15. The method of claim 14 further comprising providing a barrier region in the substrate, wherein the barrier region:
surrounds an active region in which one or more active devices are provided;
electrically isolates the active region from the substrate termination edge; and
terminates at a barrier region termination edge that is inset from the substrate termination edge such that a charge redistribution path is formed by a region between the barrier region termination edge and the substrate termination edge.
16. The method of claim 14 further comprising providing a charge redistribution path as a metal layer under the second passivation layer between the first passivation termination edge and the second passivation termination edge.
17. The method of claim 16 further comprising coupling the charge redistribution path to a fixed potential.
18. A semiconductor die comprising:
a substrate comprising boundaries defined by a substrate termination edge, the substrate comprising an active area and a barrier region arranged around a perimeter of the active area, wherein the barrier region extends to the substrate termination edge to provide electrical isolation between the active area and the substrate termination edge;
a first passivation layer over the substrate, the first passivation layer terminating at a first passivation termination edge that is inset from the substrate termination edge; and
a second passivation layer over the first passivation layer and the substrate, the second passivation layer terminating at a second passivation termination edge such that the second passivation layer overlaps the first passivation layer.
19. The semiconductor die of claim 18 , further comprising a third passivation layer over the second passivation layer and the substrate, the third passivation layer terminating at a third passivation termination edge such that the third passivation layer overlaps the second passivation layer.
20. The semiconductor die of claim 18 , further comprising a charge redistribution path, the charge redistribution path comprising a metal layer under the second passivation layer between the first passivation termination edge and the second passivation termination edge.
21. The semiconductor die of claim 18 , wherein the barrier region comprises an implanted region that extends to the substrate termination edge.