High speed, efficient SiC power module
A power converter module includes a baseplate, a substrate on the baseplate, one or more silicon carbide switching components on the substrate, and a housing over the baseplate, the substrate, and the one or more silicon carbide switching components. The housing has a footprint less than 25 cm 2 . Including a baseplate in a power converter module with a footprint less than 25 cm 2 runs counter to accepted design principles for silicon and silicon carbide-based power converter modules, but may improve performance of the power converter module and/or decrease the cost of the power converter module.
1. A power converter module comprising:
a baseplate;
a substrate on the baseplate;
one or more silicon carbide switching components on the substrate; and
a housing over the baseplate, the substrate, and the one or more silicon carbide switching components, the housing having a footprint less than 25 cm 2 .
2. The power converter module of claim 1 wherein the housing has a footprint greater than 5 cm 2 .
3. The power converter module of claim 1 wherein the substrate comprises:
a base layer of aluminum nitride;
a first conductive layer on a first surface of the aluminum nitride base layer; and
a second conductive layer on a second surface of the aluminum nitride base layer opposite the first layer.
4. The power converter module of claim 3 wherein the baseplate comprises copper.
5. The power converter module of claim 3 wherein the one or more silicon carbide switching components are on the first conductive layer and the second conductive layer is on the baseplate.
6. The power converter module of claim 5 wherein the baseplate comprises copper.
7. The power converter module of claim 5 wherein the first conductive layer is etched to form a desired connection pattern between the one or more silicon carbide switching components.
8. The power converter module of claim 7 wherein the one or more silicon carbide switching components are coupled to the first conductive layer via one or more wirebonds.
9. The power converter module of claim 7 wherein the one or more wirebonds are routed such that a power switching path has a maximum length of about 50 mm and a gate control path has a maximum length of about 20 mm.
10. The power converter module of claim 1 wherein the power converter module is a boost converter configured to receive a direct current (DC) input voltage and provide a stepped-up DC output voltage.
11. The power converter module of claim 10 wherein the one or more silicon carbide switching components comprise a metal-oxide-semiconductor field-effect transistor (MOSFET) coupled in series with a Schottky diode.
12. The power converter module of claim 11 wherein:
the MOSFET comprises a drain contact, a gate contact, and a source contact;
the Schottky diode comprises an anode coupled to the drain contact of the MOSFET and a cathode; and
the power converter module further comprises snubber circuitry coupled between the cathode of the Schottky diode and the source contact of the MOSFET.
13. The power converter module of claim 11 wherein:
the MOSFET comprises a drain contact, a gate contact, and a source contact;
the Schottky diode comprises an anode coupled to the drain contact of the MOSFET and a cathode; and
the power converter module further comprises an inner-loop capacitor provided on the substrate and coupled between the cathode of the Schottky diode and the source contact of the MOSFET.
14. The power converter module of claim 1 wherein the power converter module is configured to provide an output current up to 60 Amps, an output power up to 45 kW, and an active area of each of the one or more silicon carbide switching components is less than 30 mm 2 .
15. The power converter module of claim 1 wherein the power converter module is configured to provide an output current up to 40 Amps, an output power up to 30 kW, and an active area of each of the one or more silicon carbide switching components is less than 30 mm 2 .
16. The power converter module of claim 1 wherein the one or more silicon carbide switching components provide one of a buck converter, a half-bridge converter, a full-bridge converter, and a three-phase converter.
17. A power converter module comprising:
a baseplate;
a substrate on the baseplate;
one or more silicon carbide switching components on the substrate, the one or more silicon carbide switching components occupying an active area less than 30 mm 2 per switching component; and
a housing over the baseplate, the substrate, and the one or more silicon carbide switching components.
18. The power converter module of claim 17 wherein the substrate comprises:
a base layer of aluminum nitride;
a first conductive layer on a first surface of the aluminum nitride base layer; and
a second conductive layer on a second surface of the aluminum nitride base layer opposite the first layer.
19. The power converter module of claim 18 wherein the one or more silicon carbide switching components are on the first conductive layer and the second conductive layer is on the baseplate.
20. A power converter module comprising:
a substrate comprising a base layer, a first conductive layer on a first surface of the base layer, and a second conductive layer on a second surface of the base layer opposite the first surface, wherein a thickness of the first conductive layer is greater than 0.5 mm;
one or more silicon carbide switching components on the first conductive layer of the substrate; and
a housing over the substrate and the one or more silicon carbide switching components.
21. The power converter module of claim 20 wherein the thickness of the first conductive layer is less than 2.0 mm.