Semiconductor devices for improved measurements and related methods
Semiconductor devices, and in particular semiconductor devices for improved resistance measurements and related methods are disclosed. Contact structures for semiconductor devices are disclosed that provide access to resistance measurements with reduced influence of testing-related resistances, thereby improving testing accuracy, particularly for semiconductor devices with low on-resistance ratings. A semiconductor device may include an active region and an inactive region that is arranged along a perimeter of the active region. The semiconductor device may be arranged with a topside contact to provide access for resistance measurements, for example Kelvin-sensing resistance measurements. Related methods include performing resistance measurements from a topside of the semiconductor device, even when the active region of the semiconductor device forms a vertical contact structure.
1. A semiconductor device comprising:
a drift region comprising an active region and an inactive region, wherein the inactive region is arranged along a perimeter of the active region;
a first contact on a first side of the drift region; and
a second contact on a second side of the drift region that is opposite the first side of the drift region,
wherein the inactive region comprises a channel stop region at a peripheral edge of the drift region, and the second contact is on the channel stop region.
2. The semiconductor device of claim 1 , wherein the second contact forms a Kelvin-sense contact on the second side of the drift region.
3. The semiconductor device of claim 1 , further comprising a passivation layer on the second side of the drift region, wherein the second contact is accessible through an opening formed in the passivation layer.
4. The semiconductor device of claim 1 , wherein the inactive region comprises an edge termination region that is between the active region and the peripheral edge of the drift region, and the edge termination region is separated from the second contact by the channel stop region.
5. The semiconductor device of claim 4 , wherein:
the channel stop region comprises a surface depletion protection region that has a same doping type as a doping type of the drift region and a higher doping concentration than a doping concentration of the drift region, and a portion under the surface depletion protection region that has a lower doping concentration than that of the surface depletion protection region;
the edge termination region is arranged between the active region and the surface depletion protection region; and
the second contact is on the surface depletion protection region.
6. The semiconductor device of claim 4 , wherein:
the edge termination region forms a ring with curved corners around the active region; and
the second contact is provided between one of the curved corners of the edge termination region and a peripheral corner of the semiconductor device.
7. The semiconductor device of claim 6 , further comprising additional second contacts that are arranged between other curved corners of the edge termination region and other peripheral corners of the semiconductor device.
8. The semiconductor device of claim 6 , wherein the peripheral corner of the semiconductor device forms part of a rectangular shape for the semiconductor device.
9. The semiconductor device of claim 6 , wherein the peripheral corner of the semiconductor device forms part of a hexagonal shape for the semiconductor device.
10. The semiconductor device of claim 1 , wherein the drift region comprises silicon carbide (SiC).
11. The semiconductor device of claim 1 , wherein the active region comprises a silicon carbide (SiC) metal-oxide-semiconductor field-effect-transistor (MOSFET).
12. The semiconductor device of claim 11 , wherein the first contact is a first drain contact on the first side of the drift region and the second contact is a second drain contact on the second side of the drift region.
13. The semiconductor device of claim 1 , wherein the second contact is arranged on a first surface of the drift region and a sidewall of the drift region.
14. The semiconductor device of claim 1 , further comprising a substrate, wherein the first contact is arranged on a first side of the substrate and the second contact is further arranged on a portion of the substrate that is outside of the peripheral edge of the drift region.
15. The semiconductor device of claim 1 , further comprising a substrate, wherein the first contact is arranged on a first side of the substrate and the second contact is further arranged on a portion of the first contact that is outside of a peripheral edge of the substrate.
16. The semiconductor device of claim 1 , further comprising a substrate that is arranged between the drift region and the first contact.
17. The semiconductor device of claim 1 , further comprising a surface depletion region that is arranged in the inactive region.
18. A method of providing Kelvin-sensing measurements, the method comprising:
mounting and electrically connecting a first side of a semiconductor device to a conductive support structure; and
measuring a Kelvin-sensed voltage from a second side of the semiconductor device that is opposite the first side, wherein a first terminal, a first sense terminal, and a second sense terminal are connected to the second side of the semiconductor device, and a second terminal is connected to the conductive support structure on the first side of the semiconductor device.
19. The method of claim 18 , wherein measuring the Kelvin-sensed voltage comprises:
providing a current to the semiconductor device from the first terminal and the second terminal; and
measuring the Kelvin-sensed voltage at the first sense terminal and the second sense terminal.
20. The method of claim 19 , wherein:
the semiconductor device is a metal-oxide-semiconductor field-effect-transistor (MOSFET);
the first terminal and the first sense terminal are connected to a source contact of the MOSFET;
the second terminal is connected to a first drain contact of the MOSFET; and
the second sense terminal is connected to a second drain contact of the MOSFET.
21. The method of claim 20 , wherein the MOSFET comprises a drift region including an active region and an inactive region that is arranged along a perimeter of the active region, and the second drain contact is provided on the inactive region.
22. The method of claim 21 , wherein the inactive region comprises an edge termination region and a channel stop region that is at a peripheral edge of the semiconductor device,
wherein the channel stop region comprises a surface depletion protection region that has a same doping type as a doping type of the drift region and a higher doping concentration than a doping concentration of the drift region,
wherein the second drain contact is on the surface depletion protection region between the edge termination region and the peripheral edge of the semiconductor device.
23. A method comprising:
providing a semiconductor device, the semiconductor device comprising a drift region with an active region and an inactive region;
mounting a first side of the semiconductor device to a support structure; and
measuring a characteristic of the semiconductor device with a contact that is arranged on a second side of the semiconductor device that is opposite the first side, wherein the contact is arranged on the inactive region.
24. The method of claim 23 , wherein measuring the characteristic of the semiconductor device comprises:
providing a current to the semiconductor device from a first terminal that is connected to the active region from the second side of the semiconductor device and a second terminal that is connected to the active region from the first side of the semiconductor device; and
measuring a voltage at a first sense terminal that is connected to the active region and a second sense terminal that is connected to the contact.
25. The method of claim 24 , wherein:
the semiconductor device is a metal-oxide-semiconductor field-effect-transistor (MOSFET);
the first terminal and the first sense terminal are connected to a source contact of the MOSFET;
the second terminal is connected to a first drain contact of the MOSFET; and
the contact is a second drain contact of the MOSFET.
26. The method of claim 23 , wherein the characteristic is a resistance of the semiconductor device.
27. The method of claim 23 , wherein the contact is a Kelvin-sense contact.