Junction Barrier Schottky diodes with current surge capability
View Patent ↗An electronic device includes a silicon carbide drift region having a first conductivity type, a Schottky contact on the drift region, and a plurality of junction barrier Schottky (JBS) regions at a surface of the drift region adjacent the Schottky contact. The JBS regions have a second conductivity type opposite the first conductivity type and have a first spacing between adjacent ones of the JBS regions. The device further includes a plurality of surge protection subregions having the second conductivity type. Each of the surge protection subregions has a second spacing between adjacent ones of the surge protection subregions that is less than the first spacing.
1. A Schottky diode, comprising:
a drift region having a first conductivity type;
a Schottky contact on the drift region;
a plurality of junction barrier Schottky (JBS) regions at a surface of the drift region adjacent the Schottky contact, the plurality of JBS regions having a second conductivity type opposite the first conductivity type; and
a surge protection region at the surface of the drift region adjacent the Schottky contact, the surge protection region comprising a plurality of surge protection subregions having the second conductivity type;
wherein the surge protection subregions are configured such that a voltage drop from a surface of the drift region to a center of a junction between one of the surge protection subregions and the drift region is sufficient to cause the junction to become forward biased at a forward current that is higher than a rated current of the Schottky diode so as to provide a current surge handling ability in the Schottky diode.
2. The Schottky diode of claim 1 , wherein the JBS regions have a first spacing and wherein the surge protection region has a width that is greater than the first spacing.
3. The Schottky diode of claim 2 , wherein the first spacing is about 4 μm to about 6 μm and wherein the surge protection subregions have a second spacing of about 1 μm to about 3 μm.
4. The Schottky diode of claim 1 , wherein the JBS regions have a first width of about 1 μm to about 3 μm and wherein the surge protection region has a second width that is larger than the first width.
5. The Schottky diode of claim 1 , wherein the surge protection subregions extend into the drift region from the surface of the drift region by a depth of about 0.3 μm to about 0.5 μm.
6. The Schottky diode of claim 1 , wherein an interface between the Schottky contact and the surge protection subregions is an ohmic contact.
7. The Schottky diode of claim 1 , wherein the drift region comprises 4H—SiC, wherein the drift region has a doping level of about 5×10 15 cm −3 to 1×10 16 cm −3 , and wherein the surge protection subregions have a doping level greater than 5×10 18 cm −3 .
8. The Schottky diode of claim 1 , wherein a portion of the drift region beneath the surge protection regions has a higher electric potential than a portion of the drift region beneath the JBS regions in response to a forward voltage applied to the Schottky contact.
9. The Schottky diode of claim 1 , further comprising an additional surge protection region in the drift region adjacent the Schottky contact.
10. The Schottky diode of claim 9 , wherein the surge protection subregions define vertical current paths in the drift region between respective ones of the surge protection subregions, wherein a depth of the surge protection regions is defined by a depth of the trenches and a depth of the doped regions.
11. The Schottky diode of claim 1 , wherein the surge protection subregions comprise a plurality of trenches in the drift region and a plurality of doped regions in the drift region extending beneath respective ones of the plurality of trenches.
12. The Schottky diode of claim 1 , wherein the drift region comprises silicon carbide.
13. A Schottky diode, comprising:
a silicon carbide drift region having a first conductivity type;
a Schottky contact on the drift region;
a plurality of junction barrier Schottky (JBS) regions at a surface of the drift region adjacent the Schottky contact, each of the plurality of JBS regions having a second conductivity type opposite the first conductivity type and having a first width; and
a surge protection region at the surface of the drift region adjacent the Schottky contact, the surge protection region having a second width greater than the first width and comprising a plurality of surge protection subregions having the second conductivity type, wherein the surge protection region is configured to conduct at a forward voltage higher than a turn on voltage of the Schottky diode.
14. The Schottky diode of claim 13 , wherein adjacent ones of the JBS regions are spaced apart by a first spacing, and wherein adjacent ones of the surge protection subregions are spaced apart by a second spacing that is less than the first spacing between adjacent ones of the JBS regions.
15. The Schottky diode of claim 13 , wherein the JBS regions have a first spacing and wherein the surge protection region has a width that is greater than the first spacing.
16. The Schottky diode of claim 13 , wherein an interface between the Schottky contact and the surge protection subregions is an ohmic contact.
17. The Schottky diode of claim 13 , wherein a portion of the drift region beneath the surge protection regions has a higher electric potential than a portion of the drift region beneath the JBS regions in response to a forward voltage applied to the Schottky contact.
18. The Schottky diode of claim 13 , further comprising a plurality of surge protection regions in the drift region adjacent the Schottky contact.
19. The Schottky diode of claim 13 , wherein the surge protection subregions comprise a plurality of trenches in the drift region and a plurality of doped regions in the drift region extending beneath respective ones of the plurality of trenches.
20. The Schottky diode of claim 19 , wherein the surge protection subregions define vertical current paths in the drift region between respective ones of the surge protection subregions, wherein a depth of the surge protection regions is defined by a depth of the trenches and a depth of the doped regions.
21. A Schottky diode, comprising:
a silicon carbide drift region having a first conductivity type;
a Schottky contact on the drift region;
a plurality of junction barrier Schottky (JBS) regions at a surface of the drift region adjacent the Schottky contact, the plurality of JBS regions having a second conductivity type opposite the first conductivity type; and
a surge protection region at the surface of the drift region adjacent the Schottky contact, the surge protection region comprising a plurality of surge protection subregions having the second conductivity type, wherein the surge protection subregions comprise a plurality of trenches in the drift region and a plurality of doped regions in the drift region extending beneath respective ones of the plurality of trenches, wherein the Schottky contact extends into the plurality of trenches and contacts the surge protection subregions in the trenches.
22. The Schottky diode of claim 21 , wherein the surge protection subregions define vertical current paths in the drift region between respective ones of the surge protection subregions, wherein a depth of the surge protection regions is defined by a depth of the trenches and a depth of the doped regions.
23. The Schottky diode of claim 21 , wherein the surge protection subregions are configured such that a voltage drop from a surface of the drift region to a center of a junction between one of the surge protection subregions and the drift region is sufficient to cause the junction to become forward biased at a forward current that is higher than a rated current of the Schottky diode so as to provide a current surge handling ability in the Schottky diode.
24. The Schottky diode of claim 21 , wherein the Schottky contact forms ohmic contacts with the surge protection subregions.