High temperature ion implantation of nitride based HEMTs
View Patent ↗A method is disclosed for forming a high electron mobility transistor. The method includes the steps of implanting a Group III nitride layer at a defined position with ions that when implanted produce an improved ohmic contact between the layer and contact metals, with the implantation being carried out at a temperature higher than room temperature and hot enough to reduce the amount of damage done to the Group III nitride layer, but below a temperature at which surface problems causing leakage at the gate or epitaxial layer dissociation would occur. An ohmic contact selected from the group consisting of titanium, aluminum, nickel and alloys thereof is added to the implanted defined position on the Group III nitride layer.
1. A method of forming a high electron mobility transistor comprising:
implanting a Group III nitride layer at a defined position with ions to provide an ion-implanted region, the implantation being carried out at a temperature between 250° C. and 900° C.; and
adding a contact over the ion-implanted region to thereby form an ohmic contact.
2. A method according to claim 1 wherein the contact is formed of a metal selected from a group consisting of titanium, aluminum, nickel and alloys thereof.
3. A method according to claim 1 wherein the contact is formed of a material selected from a group consisting of titanium-tungsten-nitride, titanium-nitride, molybdenum and molybdenum silicides.
4. A method of forming a high electron mobility transistor according to claim 1 wherein the implantation is carried out at a temperature of at least 350° C.
5. A method of forming a high electron mobility transistor according to claim 1 wherein the implantation is carried out at a temperature of at least 650° C.
6. A method of forming a high electron mobility transistor according to claim 1 wherein the implantation is carried out at a temperature of at least 800° C.
7. A method of forming a high electron mobility transistor according to claim 1 wherein the implantation is carried out with an ion beam current between about 30 μA and 130 μA.
8. A method of forming a high electron mobility transistor according to claim 1 wherein the implantation is carried out with an ion beam current of about 40 μA.
9. A method of forming a high electron mobility transistor according to claim 8 wherein the implantation is carried out at a temperature of at least 350° C.
10. A method of forming a high electron mobility transistor according to claim 8 wherein the implantation is carried out at a temperature of at least 650° C.
11. A method of forming a high electron mobility transistor according to claim 1 wherein the implantation is carried out with an ion beam current of about 120 μA.
12. A method of forming a high electron mobility transistor according to claim 11 wherein the implantation is carried out at a temperature of at least 350° C.
13. A method of forming a high electron mobility transistor according to claim 11 wherein the implantation is carried out at a temperature of at least 650° C.
14. A method of forming a high electron mobility transistor according to claim 1 wherein the contact is comprised of an alloy of titanium, aluminum and nickel.
15. A method of forming a high electron mobility transistor according to claim 1 wherein implanting the Group III nitride layer at the defined position with ions to provide the ion-implanted region comprises implanting the Group III nitride layer at the defined position with ions through a protective layer placed on top of the Group III nitride layer to reduce the amount of damage to the Group III nitride layer.
16. A method of forming a high electron mobility transistor according to claim 15 wherein the protective layer is a silicon nitride protective layer.
17. A method of forming a high electron mobility transistor according to claim 1 comprising placing a mask layer on the Group III nitride layer before the step of implanting to prevent implantation at positions other than the defined position.
18. A method of forming a high electron mobility transistor according to claim 17 wherein the mask layer is an oxide mask layer.
19. A method of forming a high electron mobility transistor comprising:
placing a protective layer on a Group III nitride layer;
implanting the Group III nitride layer through the protective layer at a defined position with ions to provide an ion-implanted region, the implantation being carried out with an ion beam current between about 30 μA and 130 μA; and
adding an ohmic contact over the ion-implanted region.
20. A method of forming a high electron mobility transistor according to claim 19 wherein the protective layer is a silicon nitride protective layer.
21. A method of forming a high electron mobility transistor according to claim 19 wherein the implantation of the Group III nitride layer with ions is carried out at a temperature of between about 250° C. and 900° C.
22. A method of forming a high electron mobility transistor according to claim 19 wherein the contact is comprised of an alloy of titanium, aluminum and nickel.
23. A method of forming a high electron mobility transistor according to claim 1 wherein:
the high electron mobility transistor comprises a GaN layer and the Group III nitride layer is an AlGaN layer formed on the GaN layer;
implanting the Group III nitride layer comprises implanting the AlGaN layer at the defined position with ions to provide the ion-implanted region such that the ion-implanted region extends through the AlGaN layer into the GaN layer; and
adding the contact comprises adding the contact over the ion-implanted region to thereby form the ohmic contact to a 2-DEG formed at an interface of the GaN layer and the AlGaN layer.
24. A method of forming a high electron mobility transistor according to claim 19 wherein:
the high electron mobility transistor comprises a GaN layer and the Group III nitride layer is an AlGaN layer formed on the GaN layer;
implanting the Group III nitride layer comprises implanting the AlGaN layer at the defined position with ions to provide the ion-implanted region such that the ion-implanted region extends through the AlGaN layer into the GaN layer; and
adding the contact comprises adding the contact over the ion-implanted region to thereby form the ohmic contact to a 2-DEG formed at an interface of the GaN layer and the AlGaN layer.