Granted Patent
Utility
US 6,278,133 · App. 09/298,116
Field effect transistor of SiC for high temperature application, use of such a transistor and a method for production thereof
Inventors:
Christopher Harris, Andrei Konstantinov, Susan Savage
Patented Case
View Patent ↗
Granted: Aug 21, 2001
Filed: Apr 23, 1999
Inventors
Christopher Harris
Andrei Konstantinov
Susan Savage
Assignee (at issue)
Acreo AB
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.