Bulk single crystal gallium nitride and method of making same
View Patent ↗A single crystal M*N article, which may be made by a process including the steps of: providing a substrate of material having a crystalline surface which is epitaxially compatible with M*N; depositing a layer of single crystal M*N over the surface of the substrate; and removing the substrate from the layer of single crystal M*N, e.g., with an etching agent which is applied to the substrate to remove same, to yield the layer of single crystal M*N as said single crystal M*N article. The bulk single crystal M*N article is suitable for use as a substrate for the fabrication of microelectronic structures thereon, to produce microelectronic devices comprising bulk single crystal M*N substrates, or precursor structures thereof.
1. A method of making a single crystal GaN substrate, comprising growing single crystal GaN over a substrate heterogeneous to GaN, having an etch stop layer thereon, and removing the heterogeneous substrate to yield the single crystal GaN substrate.
2. A method of making a single crystal GaN substrate, including the steps of:
providing a substrate heterogeneous to GaN, having one or more intermediate layers thereon wherein the one or more intermediate layers includes an etch stop layer;
growing a layer of single crystal GaN over said one or more intermediate layers to form an article including the heterogeneous substrate, one or more intermediate layers, and said layer of single crystal GaN; and
removing the heterogeneous substrate from the article.
3. The method of claim 2 , wherein the one or more intermediate layers includes a buffer layer.
4. The method of claim 2 , wherein the one or more intermediate layers includes a template layer for subsequent GaN growth thereon.
5. The method of claim 2 , wherein the one or more intermediate layers includes a protective layer.
6. A method of forming a GaN single crystal substrate, comprising:
growing single crystal GaN on a gallium arsenide substrate; and
etching the gallium arsenide substrate to remove same and yield the GaN single crystal substrate.
7. The method of claim 6 , wherein the gallium arsenide substrate is etched away in situ at a temperature within 300° C. of the growth temperature of the GaN on the gallium arsenide substrate.