IP Library › Assignment 015286/0635
Patent Assignment
Reel/Frame 015286/0635

Assignment of Assignor's Interest

Recorded: 2004-05-05 Received: 2004-05-07 Pages: 9
Assignor
Assignee
CREE, INC.
4600 SILICON DRIVE, DURHAM, NC, 27703, UNITED STATES
Covered Properties (13)
Solid State White Light Emitter and Display Using Same
Application: 10/623,198 →
High Voltage Switching Devices and Process for Forming Same
Sorting Electronic Messages Using Attributes of the Sender Address
Application: 10/418,373 →
Iii-V Nitride Substrate Boule and Method of Making and Using the Same
Application: 10/369,846 →
Gan Boule Grown from Liquid Melt Using Gan Seed Wafers
Application: 10/328,223 →
High Surface Quality Gan Wafer and Method of Fabricating Same
Application: 10/272,761 →
Doped Group Iii-V Nitride Materials, and Microelectronic Devices and Device Precursor Structures Comprising Same
Application: 10/107,001 →
Low Defect Density (Ga, Al, in) N and Hvpe Process for Making Same
Application: 10/103,226 →
Silicon Carbide Epitaxial Layers Grown on Substrates Offcut Towards <1100>
Application: 10/001,476 →
Free-Standing (Al, Ga, in)N and Parting Method for Forming Same
Application: 09/947,253 →
Bulk Single Crystal Gallium Nitride and Method of Making Same
Application: 09/933,943 →
Bulk Single Crystal Gallium Nitride and Method of Making Same
Application: 09/929,789 →
High Surface Quality Gan Wafer and Method of Fabricating Same
Application: 09/877,437 →