Semiconductor device comprising a junction having a plurality of rings
View Patent ↗A semiconductor device comprises a first layer ( 1 ) of a wide band gap semiconductor material doped according to a first conductivity type and a second layer ( 3 ) on top thereof designed to form a junction blocking current in the reverse biased state of the device at the interface to said first layer. The device comprises extension means for extending a termination of the junction laterally with respect to the lateral border ( 6 ) of the second layer. This extension means comprises a plurality of rings ( 16 - 21 ) in juxtaposition laterally surrounding said junction ( 15 ) and being arranged as seen in the lateral direction away from said junction alternatively a ring ( 16 - 18 ) of a semiconductor material of a second conductivity type opposite to that of said first layer and a ring ( 19 - 21 ) of a semi-insulating material.
1. A semiconductor device comprising a first layer ( 1 ) of a semiconductor material having an energy gap between the conduction band and the valence band exceeding 2.2 eV and being doped according to a first conductivity type, n or p, and a second layer ( 3 ) on top thereof designed to form a junction ( 15 ) blocking current in a reverse biased state of the device at an interface to said first layer, said device further comprising extension means for extending a termination of said junction and by that distributing the electric field within said first layer laterally with respect to a lateral border ( 6 ) of said second layer ( 3 ),
wherein said extension means comprises a plurality of annular, concentric rings in juxtaposition laterally surrounding said junction and being arranged, in a lateral direction away from said junction, alternately a ring ( 16 - 18 ) of a semiconductor material of a second conductivity type opposite to that of said first layer ( 1 ) and a ring ( 19 - 21 ) of a semi-insulating material having different characteristics from said semi-conductor material of both said first layer ( 1 ) and rings ( 16 - 18 ) of said second conductivity type.
2. A device according to claim 1 , wherein said second layer ( 3 ) is formed by a metal having a Schottky-barrier with respect to the semiconductor material of said first layer ( 1 ) for forming said blocking junction in the form of a Schottky-junction ( 15 ).
3. A device according to claim 2 , wherein an innermost ring ( 16 ′) of a semiconductor material is in contact with said second metal layer ( 3 ).
4. A device according to claim 2 , in which said semiconductor material of said first layer ( 1 ) is diamond, said first layer is a p-type layer and each said ring ( 16 - 18 , 16 ′- 18 ′) of a semiconductor material is also of diamond doped with n-type dopants, such as Li.
5. A device according to claim 1 , comprising a series of said alternating rings ( 16 - 18 and 19 - 21 ).
6. A device according to claim 5 , comprising three said rings ( 16 - 18 ) of semi-conductor material and three said rings ( 19 - 21 ) of semi-insulating material, with one ( 19 ) of said semi-insulating rings ( 19 - 21 ) bordering said second layer ( 3 ) at said junction ( 15 ).
7. A device according to claim 5 , wherein said series of rings ( 16 - 18 and 19 - 21 ) are embedded in said first layer ( 1 ).
8. A device according to claim 7 , wherein said first layer ( 1 ) is a lightly-doped drift layer of n-type conductivity, and additionally comprising a substrate ( 2 ) of highly-doped n-type conductivity situated underneath said first layer ( 1 ) and an ohmic metal contact ( 14 ) situated underneath said substrate ( 2 ).
9. A device according to claim 1 , wherein said semiconductor material of said first layer ( 1 ) is one of SiC, a group 3B-Nitride, and diamond.
10. A device according to claim 8 , in which the semiconductor material of said first layer ( 1 ) is SiC or a group 3B-Nitride, said first layer is a n-type layer, and each said ring ( 16 - 18 , 16 ′- 18 ′) of a semiconductor material is formed by the same semiconductor material as the first layer and has a doping concentration of 5×10 15 -10 18 cm −3 .
11. A device according to claim 9 , wherein the group 3B-Nitride is GaN.
12. A device according to claim 1 , additionally comprising a layer ( 13 ) of semi-insulating material situated adjacent said lateral border ( 6 ) and above said rings ( 16 - 18 , 19 - 21 ).
13. A device according to claim 12 , wherein said lateral border ( 6 ) extends in plane or direction away from said first layer ( 1 ).
14. A device according to claim 1 , wherein each said ring ( 19 - 21 ) of a semi-insulating material comprises dopants and is electrically inactive compared to said surrounding first layer ( 1 ) such that this ring ( 19 - 21 ) possesses a semi-insulating resistivity.
15. A device according to claim 14 , wherein dopants are implanted into each said ring ( 16 - 18 ) of semi-conductor material of second conductivity type for locally changing conductivity of said rings ( 16 - 18 ) with respect to said first layer ( 1 ) and followed by making said rings ( 16 - 18 ) electrically active, and the dopants are implanted into each said ring ( 19 - 21 ) of semi-insulating material within said first layer ( 1 ) without making each said ring ( 19 - 21 ) of semi-insulating material electrically active, such that each said ring ( 19 - 21 ) of semi-insulating material possesses resistivity making the same semi-insulating.
16. A device according to claim 1 , wherein said second layer ( 23 ) is made of the same semiconductor material as said first layer but doped according to said second conductivity type for forming said blocking junction in the form of a pn-junction ( 24 ).
17. A device according to claim 1 , wherein the innermost ring ( 16 ) of a semiconductor material is laterally spaced with respect to the lateral border ( 6 ) of said second layer ( 3 ).
18. A device according to claim 1 , wherein each said ring ( 16 - 18 ) of a semiconductor material is formed by a ring in said first layer ( 1 ) having dopants of said second conductivity type implanted thereinto for locally changing the conductivity type of this ring with respect to that of said first layer ( 1 ).
19. A device according to claim 1 , wherein each said ring ( 16 ′- 18 ′) of a semiconductor material is formed by a ring of said semiconductor material with dopants of said second conductivity type therein epitaxially grown on top of said first layer ( 1 ).
20. A device according to claim 1 , wherein each said ring ( 19 ′- 21 ′) of a semi-insulating material is formed by a ring of said semi-insulating material grown on top of said first layer.
21. A device according to claim 1 , wherein each said ring ( 19 - 21 , 19 ′- 21 ′) is formed by a semi-insulating material in the form of a low doped material being a semiconducting material when higher doped, such as SiC.
22. A device according to claim 1 , wherein each said ring ( 19 - 21 ) of a semi-insulating material has a resistivity of 10-10 3 Ω×cm at room temperature.
23. A device according to claim 22 , wherein said semi-insulating material is one of amorphous SiC, DLC (Diamond Like Carbon) and SIPOS (Semi-Insulating Polycrystalline Silicon).
24. A device according to claim 1 , wherein the lateral spacing of two consecutive said rings ( 16 , 17 or 17 , 18 ) of a semiconductor material is 5-50 μm.
25. A device according to claim 1 , wherein said rings of semiconductor ( 16 - 18 ) and semi-insulating ( 19 - 21 ) material all directly contact said first layer ( 1 ).
26. A device according to claim 1 , additionally comprising a passivation layer ( 4 ) situated on top of said rings of semiconductor ( 16 - 18 ) and semi-insulating ( 19 - 21 ) material, underneath said second layer ( 3 ) and adjacent said lateral border ( 6 ).
27. A device according to claim 1 , wherein p-n junctions are only formed between said first layer ( 1 ) and rings ( 16 - 18 ) of semiconductor material.
28. A device according to claim 1 , wherein said rings of semi-insulating material ( 19 - 21 ) are non-electrically active.
29. A device according to claim 1 , wherein said lateral border ( 6 ) extends in a plane or direction away from said first layer ( 1 ).
30. A semiconductor device comprising a first layer ( 1 ) of a semiconductor material having an energy gap between the conduction band and the valence band exceeding 2.2 eV and being doped according to a first conductivity type, n or p, and a second layer ( 3 ) on top thereof designed to form a junction ( 15 ) blocking current in a reverse biased state of the device at an interface to said first layer, said device further comprising extension means for extending a termination of said junction and by that distributing the electric field within said first layer laterally with respect to a lateral border ( 6 ) of said second layer,
wherein said extension means comprises a plurality of annular, concentric rings in juxtaposition laterally surrounding said junction and being arranged, in a lateral direction away from said junction, alternately a ring ( 16 - 18 ) of a semiconductor material of a second conductivity type opposite to that of said first layer and a ring ( 19 - 21 ) of a semi-insulating material having different characteristics from said semi-conductor material of both said first layer ( 1 ) and rings ( 16 - 18 ) of said second conductivity type, and
each said ring ( 19 - 21 ) of a semi-insulating material is situated within said first layer ( 1 ), comprises dopants and is electrically inactive compared to said surrounding first layer ( 1 ) such that this ring ( 19 - 21 ) possesses a semi-insulating resistivity.
31. A device according to claim 30 , wherein each said ring ( 16 - 18 ) of semi-conductor material of second conductivity type opposite said first layer ( 1 ) is also situated within said first layer ( 1 ) and dopants are implanted into each said ring ( 16 - 18 ) of semi-conductor material of second conductivity type for locally changing conductivity of said rings ( 16 - 18 ) with respect to said first layer ( 1 ) and followed by making said rings ( 16 - 18 ) electrically active, and
the dopants are implanted into each said ring ( 19 - 21 ) of semi-insulating material within said first layer ( 1 ) without making each said ring ( 19 - 21 ) of semi-insulating material electrically active, such that each said ring ( 19 - 21 ) of semi-insulating material possesses resistivity making the same semi-insulating.
32. A semiconductor device comprising
a first layer ( 1 ) of a semiconductor material having an energy gap between the conduction band and the valence band exceeding 2.2 eV and being doped according to a first conductivity type, n or p,
a second layer ( 3 ) situated on top thereof arranged to form a junction ( 15 ) blocking current in a reverse biased state of the device at an interface to said first layer ( 1 ),
extension means for extending a termination of said junction ( 15 ) and distributing the electric field within said first layer ( 1 ) laterally with respect to a lateral border ( 6 ) of said second layer ( 3 ),
wherein said extension means comprises a ring ( 19 ) of a semi-insulating material having different characteristics from material forming said first ( 1 ) and second ( 3 ) layers and embedded in said first layer ( 1 ), situated adjacent and underneath said lateral border ( 6 ) of said second layer ( 3 ) and contacting both said first ( 1 ) and second ( 3 ) layers, and
a series of alternating rings of semi-conductor material ( 16 - 18 ) of a second conductivity type opposite said first layer ( 1 ) and semi-insulating material ( 20 , 21 ) having different characteristics from material forming said first layer ( 1 ) and rings of semi-conductor material ( 16 - 18 ) laterally-adjacent said ring ( 19 ) of semi-insulating material also having different characteristics from the material forming the rings ( 16 - 18 ) of semi-conductor material and extending away from said lateral border ( 6 ).