Thin film resistor
View Patent ↗The present disclosure relates to a thin film resistor that is formed on a substrate along with other semiconductor devices to form all or part of an electronic circuit. The thin film resistor includes a resistor segment that is formed over the substrate and a protective cap that is formed over the resistor segment. The protective cap is provided to keep at least a portion of the resistor segment from oxidizing during fabrication of the thin film resistor and other components that are provided on the semiconductor substrate. As such, no oxide layer is formed between the resistor segment and the protective cap. Contacts for the thin film resistor may be provided at various locations on the protective cap, and as such, are not provided solely over a portion of the resistor segment that is covered with an oxide layer.
1. An apparatus comprising:
a substrate;
a resistor segment on the substrate;
a protective cap on the resistor segment wherein the resistor segment and the protective cap form a thin film resistor and there is essentially no oxide layer formed between the resistor segment and the protective cap.
2. The apparatus of claim 1 wherein the protective cap has a first surface and further comprising a first interconnect having a first end in contact with at least a first portion of the first surface.
3. The apparatus of claim 2 further comprising a second interconnect having a second end in contact with at least a second portion of the first surface wherein a majority of current flowing through the thin film resistor flows through the resistor segment.
4. The apparatus of claim 2 wherein an unprotected surface of the resistor segment of the thin film resistor that is not covered by the protective cap has an oxide layer and the first end is in further contact with the oxide layer.
5. The apparatus of claim 1 wherein the resistor segment is formed from a resistor material that is prone to oxidation.
6. The apparatus of claim 5 wherein the protective cap is formed from a protective cap material that is not prone to oxidation.
7. The apparatus of claim 6 wherein the protective cap material comprises platinum.
8. The apparatus of claim 7 wherein the protective cap material consists essentially of platinum.
9. The apparatus of claim 5 wherein the resistor material comprises one of a group consisting of nickel, chromium, and nichrome.
10. The apparatus of claim of claim 5 wherein a thickness of the protective cap of the thin film resistor is less than about 15% of a combined thickness of the protective cap and the resistor segment.
11. The apparatus of claim 10 wherein a thickness of the resistor segment of the thin film resistor is greater than about 85% of a combined thickness of the protective cap and the resistor segment.
12. The apparatus of claim 5 wherein the resistor segment of the thin film resistor is between about 800 and 1000 Angstroms thick and the protective cap is less than about 100Angstroms thick.
13. The apparatus of claim 5 wherein the protective cap comprises platinum and the resistor segment comprises one of a group consisting of nickel, chromium, and nichrome.
14. An apparatus comprising:
a substrate;
a resistor segment on the substrate;
a protective cap directly on the resistor segment wherein the resistor segment and the protective cap form a thin film resistor; and
a contact on the protective cap.
15. The apparatus of claim 14 wherein there is essentially no oxide layer formed between the resistor segment and the protective cap.
16. The apparatus of claim 15 wherein the protective cap comprises platinum and the resistor segment comprises one of a group consisting of nickel, chromium, and nichrome.