Vertical semiconductor device with improved ruggedness
A vertical semiconductor device includes one or more of a substrate, a buffer layer over the substrate, one or more drift layers over the buffer layer, and a spreading layer over the one or more drift layers.
1. A vertical semiconductor device comprising:
a substrate having a first doping type;
a buffer layer over the substrate and having the first doping type;
a drift layer over the buffer layer and having the first doping type; and
a spreading layer over the drift layer and having the first doping type;
wherein:
the substrate, the buffer layer, and the drift layer comprise silicon carbide; and
a thickness of the buffer layer is greater than twenty-five percent and less than or equal to thirty-five percent of a thickness of the drift layer.
2. The vertical semiconductor device of claim 1 wherein a doping concentration of the buffer layer is at least ten times a doping concentration of the drift layer.
3. The vertical semiconductor device of claim 1 wherein a doping concentration of the buffer layer is between ten and thirty times a doping concentration of the drift layer.
4. The vertical semiconductor device of claim 1 wherein a doping concentration of the spreading layer is between 1×10 16 cm −3 to 5×10 16 cm −3 .
5. The vertical semiconductor device of claim 1 wherein the thickness of the buffer layer is greater than twenty-five percent and less than or equal to thirty percent of the thickness of the drift layer.
6. The vertical semiconductor device of claim 1 wherein a doping concentration of the buffer layer is between 5×10 16 cm −3 and 5×10 18 cm −3 .
7. The vertical semiconductor device of claim 6 wherein the spreading layer has a doping concentration between two and one thousand times that of the doping concentration of the drift layer.
8. The vertical semiconductor device of claim 6 wherein the buffer layer and the drift layer are uniformly doped.
9. The vertical semiconductor device of claim 6 wherein a thickness of the spreading layer is less than the thickness of the drift layer.
10. The vertical semiconductor device of claim 1 wherein a doping concentration of the buffer layer is between fifteen and twenty-five times a doping concentration of the drift layer.
11. The vertical semiconductor device of claim 1 wherein a doping concentration of the drift layer is between 1×10 13 cm −3 and 1×10 17 cm −3 and the thickness of the drift layer is between one and four micrometers.
12. The vertical semiconductor device of claim 11 wherein a doping concentration of the buffer layer is between 1×10 17 cm −3 and 5×10 18 cm 3 .
13. A vertical semiconductor device comprising:
a substrate having a first doping type;
a first drift layer and a second drift layer over the substrate and having the first doping type, wherein the second drift layer is between the first drift layer and the substrate; and
a spreading layer over the first drift layer and having the first doping type, wherein the substrate, the first drift layer, and the second drift layer comprise silicon carbide.
14. The vertical semiconductor device of claim 13 wherein a doping concentration for the second drift layer is higher than a doping concentration for the first drift layer.
15. The vertical semiconductor device of claim 13 wherein a doping concentration for the second drift layer is between 1.1 and 3 times a doping concentration for the first drift layer.
16. The vertical semiconductor device of claim 13 wherein:
a doping concentration for the second drift layer is higher than a doping concentration for the first drift layer; and
a thickness of the second drift layer is less than a thickness of the first drift layer.
17. The vertical semiconductor device of claim 13 wherein doping concentrations of the first drift layer and the second drift layer are between 1×10 13 cm −3 and 1×10 17 cm 3 , a thickness of the first drift layer is between 2 and 50 micrometers, and a thickness of the second drift layer is between 1 and 30 micrometers.
18. The vertical semiconductor device of claim 13 wherein there is no buffer layer between the substrate and either of the first drift layer or the second drift layer.
19. The vertical semiconductor device of claim 13 wherein the spreading layer comprises silicon carbide and has a higher doping concentration than the first drift layer.
20. A vertical semiconductor device comprising:
a substrate having a first doping type;
a buffer layer over the substrate and having the first doping type;
a first drift layer and a second drift layer over the buffer layer and having the first doping type, wherein the second drift layer is between the first drift layer and the substrate; and
a spreading layer over the first drift layer and having the first doping type, wherein the substrate, the buffer layer, and the first and second drift layers comprise silicon carbide.
21. The vertical semiconductor device of claim 20 wherein a doping concentration for the second drift layer is higher than a doping concentration for the first drift layer.
22. The vertical semiconductor device of claim 20 wherein a doping concentration for the second drift layer is between 1.1 and 3 times a doping concentration for the first drift layer.
23. The vertical semiconductor device of claim 20 wherein:
a doping concentration for the second drift layer is higher than a doping concentration for the first drift layer; and
a thickness of the second drift layer is less than a thickness of the first drift layer.
24. The vertical semiconductor device of claim 23 wherein a doping concentration of the buffer layer is at least ten times an average doping concentration of the first drift layer and the second drift layer.
25. The vertical semiconductor device of claim 23 wherein a doping concentration of the buffer layer is between ten and thirty times an average doping concentration of the first drift layer and the second drift layer.
26. The vertical semiconductor device of claim 25 wherein a thickness of the buffer layer is between ten and thirty percent of a combined thickness of the first drift layer and the second drift layer.
27. The vertical semiconductor device of claim 20 wherein:
a doping concentration of the buffer layer is between ten and thirty times a doping concentration of the first drift layer; and
a thickness of the buffer layer is between ten and thirty percent of a thickness of the first and second drift layers.
28. The vertical semiconductor device of claim 27 wherein the spreading layer has a doping concentration between two and one thousand times that of the doping concentration of the first and second drift layers.
29. The vertical semiconductor device of claim 27 wherein the buffer layer and the first and second drift layers are uniformly doped.
30. The vertical semiconductor device of claim 27 wherein a thickness of the spreading layer is less than a combined thickness of the first drift layer and the second drift layer.
31. The vertical semiconductor device of claim 20 wherein doping concentrations of the first drift layer and the second drift layer are between 1×10 13 cm −3 and 1×10 17 cm 3 , a thickness of the first drift layer is between 2 and 50 micrometers, and a thickness of the second drift layer is between 1 and 30 micrometers.
32. The vertical semiconductor device of claim 31 wherein a doping concentration of the buffer layer is between 1×10 17 cm −3 and 5×10 18 cm 3.