IP Library › Granted Patent US 6,727,531
Granted Patent Utility
US 6,727,531 · App. 09/633,598

Indium gallium nitride channel high electron mobility transistors, and method of making the same

Inventors: Joan M. Redwing, Edwin L. Piner
Patented Case View Patent ↗
Granted: Apr 27, 2004 Filed: Aug 7, 2000
Inventors
Joan M. Redwing
Edwin L. Piner
Assignee (at issue)
ADVANCED TECHNOLOGY & MATERIALS CO., LTD.

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Quick Facts
Patent No.
US 6,727,531
App. No.
09/633,598
Filed
2000-08-07
Granted
2004-04-27
Kind
B1