High current, low switching loss SiC power module
A power module includes a housing with an interior chamber and multiple switch modules mounted within the interior chamber of the housing. The switch modules are interconnected and configured to facilitate switching power to a load. Each one of the switch modules includes at least one transistor and at least one diode. The at least one transistor and the at least one diode may be formed from a wide band-gap material system, such as silicon carbide (SiC), thereby allowing the power module to operate at high frequencies with lower switching losses when compared to conventional power modules.
1. A power module comprising:
a housing with an interior chamber; and
a plurality of switch modules mounted within the interior chamber and interconnected to facilitate switching power to a load wherein each of the plurality of switch modules comprises at least one transistor and at least one diode and the power module is able to block 1200 volts, conduct 300 amperes, and has switching losses of less than 20 milli-Joules.
2. The power module of claim 1 wherein the power module has switching losses greater than 1 milli-Joule.
3. The power module of claim 1 wherein the power module is configured to operate at a switching frequency of at least 50 kHz.
4. The power module of claim 1 wherein the at least one transistor is formed over a layer of aluminum nitride.
5. The power module of claim 4 wherein the plurality of switch modules are mounted to an aluminum silicon carbide base plate.
6. The power module of claim 1 wherein the at least one transistor and the at least one diode are silicon carbide (SiC) devices.
7. The power module of claim 6 wherein the at least one transistor is a metal-oxide-semiconductor field-effect transistor (MOSFET) and the at least one diode is a Schottky diode.
8. The power module of claim 7 wherein:
the plurality of switch modules consists of two switch modules;
the switch modules are coupled in series between a positive power supply terminal and a negative power supply terminal; and
an output terminal is coupled between the switch modules.
9. The power module of claim 7 wherein the at least one transistor is coupled anti-parallel with the at least one diode.
10. The power module of claim 9 wherein the at least one transistor comprises an array of transistors effectively coupled in parallel and the at least one diode comprises an array of diodes effectively coupled in parallel.
11. A power module comprising:
a housing with an interior chamber;
at least a first power substrate within the interior chamber, the first power substrate including one or more switch modules on a first surface of the first power substrate for facilitating switching power to a load, wherein the one or more switch modules comprise at least one transistor and at least one diode; and
a gate connector coupled to a gate contact of the at least one transistor via a signal path that includes a first conductive trace on the first surface of the power substrate.
12. The power module of claim 11 wherein the power module is configured to operate at a switching frequency of at least 50 kHz.
13. The power module of claim 11 wherein the power module further comprises a pair of output contacts arranged such that an area of at least 150 mm 2 of each one of the output contacts is located less than 1.5 mm from the other output contact.
14. The power module of claim 11 wherein the at least one transistor is formed over a layer of aluminum nitride.
15. The power module of claim 14 wherein the one or more switch modules are mounted to an aluminum silicon carbide base plate.
16. The power module of claim 11 further comprising a second power substrate that is separate from the first power substrate and comprises a second conductive trace on a first surface of the second power substrate wherein the second conductive trace forms a part of the signal path.
17. The power module of claim 16 wherein:
the gate contact of the at least one transistor is coupled to the first conductive trace via a first wire bond;
the gate connector is coupled to the second conductive trace via a second wire bond; and
the first conductive trace and the second conductive trace are connected via a third wire bond.
18. The power module of claim 11 wherein the power module is able to block 1200 volts, conduct 300 amperes, and has switching losses of less than 20 milli-Joules.
19. The power module of claim 18 wherein the power module further comprises a pair of output contacts arranged such that an area of at least 150 mm 2 of each one of the output contacts is located less than 1.5 mm from the other output contact.
20. The power module of claim 11 wherein the at least one transistor and the at least one diode are silicon carbide (SiC) devices.
21. The power module of claim 20 wherein the at least one transistor is a metal-oxide-semiconductor field-effect transistor (MOSFET) and the at least one diode is a Schottky diode.
22. The power module of claim 21 wherein:
the one or more switch modules consist of two switch modules;
the switch modules are coupled in series between a positive power supply terminal and a negative power supply terminal; and
an output terminal is coupled between the switch modules.
23. The power module of claim 21 wherein the at least one transistor is coupled in anti-parallel with the at least one diode.
24. The power module of claim 23 wherein the at least one transistor comprises an array of transistors effectively coupled in parallel and the at least one diode comprises an array of diodes effectively coupled in parallel.
25. A power module comprising:
a housing with an interior chamber;
a pair of output contacts arranged such that an area of at least 150 mm 2 of each one of the output contacts is located less than 1.5 mm from the other output contact; and
a plurality of switch modules mounted within the interior chamber and interconnected to facilitate switching power from a power source coupled between the output contacts to a load, the plurality of switch modules comprising at least one transistor and at least one diode.
26. The power module of claim 25 wherein the power module is configured to operate at a switching frequency of at least 50 kHz.
27. The power module of claim 25 wherein the power module is able to block 1200 volts, conduct 300 amperes, and has switching losses less than 20 milli-Joules.
28. The power module of claim 25 wherein the at least one transistor is formed over a layer of aluminum nitride.
29. The power module of claim 28 wherein the plurality of switch modules are mounted to an aluminum silicon carbide base plate.
30. The power module of claim 25 wherein the at least one transistor and the at least one diode are silicon carbide (SiC) devices.
31. The power module of claim 30 wherein the at least one transistor is a metal-oxide-semiconductor field-effect transistor (MOSFET) and the at least one diode is a Schottky diode.
32. The power module of claim 31 wherein:
the plurality of switch modules consists of two switch modules;
the switch modules are coupled in series between a positive power supply terminal and a negative power supply terminal; and
an output terminal is coupled between the switch modules.
33. The power module of claim 31 wherein the at least one transistor is coupled in anti-parallel with the at least one diode.
34. The power module of claim 33 wherein the at least one transistor comprises an array of transistors effectively coupled in parallel and the at least one diode comprises an array of diodes effectively coupled in parallel.