Granted Patent
Utility
US 6,583,454
· Confirmation No. 4779
NITRIDE BASED TRANSISTORS ON SEMI-INSULATING SILICON CARBIDE SUBSTRATES
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⬇ PDF
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Code | Description | Pages | ||
|---|---|---|---|---|---|
| 2001-03-29 | TRNA |
Transmittal of New Application | 2 | View | |
| 2001-03-29 | A.PE |
Preliminary Amendment | 2 | View | |
| 2001-03-29 | SPEC |
Specification | 10 | View | |
| 2001-03-29 | CLM |
Claims | 5 | View | |
| 2001-03-29 | ABST |
Abstract | 1 | View | |
| 2001-03-29 | DRW |
Drawings-only black and white line drawings | 2 | View | |
| 2001-03-29 | OATH |
Oath or Declaration filed | 3 | View |
Inventors
Attorneys & Agents of Record
Classification
USPC
257/194
H10D62/8325
H10D62/8503
H10D30/4755
H10D62/85
H10D64/62
H10D62/82
H10D30/4732
Prosecution
- Examiner
- HU, SHOUXIANG
- Art Unit
- 2811
- Customer No.
- 21176
- Docket No.
- 5000.108B
- Confirmation No.
- 4779
Publication
- Pub. No.
- US20010017370A1
- Pub. Date
- 2001-08-30
Patent Term Adjustment
-120days
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Quick Facts
- Patent No.
- US 6,583,454
- App. No.
- 09/821,360
- Filed
- 2001-03-29
- Granted
- 2003-06-24
- Pub. No.
- US20010017370A1
- Examiner
- HU, SHOUXIANG
- Art Unit
- 2811
- PTA
- -120 days
External Links