Bias adjustment circuitry for balanced amplifiers
View Patent ↗Circuitry includes a balanced amplifier and bias adjustment circuitry. The bias adjustment circuitry is coupled to the balanced amplifier and is configured to measure an RF termination voltage across an output termination impedance of the balanced amplifier and adjust a bias voltage supplied to the balanced amplifier based on the RF termination voltage. Notably, the RF termination voltage is proportional to a voltage standing wave ratio (VSWR) of the balanced amplifier, and thus enables an accurate measurement thereof. By using the RF termination voltage to adjust a bias voltage supplied to the balanced amplifier, overvoltage and/or thermally stressing conditions of the balanced amplifier as a result of high VSWR may be avoided while simultaneously avoiding the need for large or expensive isolation circuitry.
1. Circuitry comprising:
a balanced amplifier comprising:
an input quadrature coupler;
an output quadrature coupler; and
a first amplifying element and a second amplifying element coupled between the input quadrature coupler and the output quadrature coupler; and
bias adjustment circuitry coupled to the balanced amplifier and configured to:
measure an RF termination voltage across an output termination impedance coupled to the output quadrature coupler of the balanced amplifier, wherein the RF termination voltage is proportional to a voltage standing wave ratio (VSWR) of the balanced amplifier; and
adjust a bias voltage supplied to the balanced amplifier based on the RF termination voltage.
2. The circuitry of claim 1 wherein the balanced amplifier and the bias adjustment circuitry are monolithically integrated on a semiconductor die.
3. The circuitry of claim 1 wherein the bias adjustment circuitry comprises:
termination voltage amplification circuitry configured to receive and amplify the RF termination voltage; and
bias adjustment voltage generation circuitry configured to generate a direct current (DC) bias adjustment voltage based on the amplified RF termination voltage.
4. The circuitry of claim 3 wherein the bias adjustment voltage generation circuitry comprises:
a bias adjustment input node and a bias adjustment output node;
a load resistor coupled between the bias adjustment input node and ground;
a bias adjustment capacitor coupled between the bias adjustment input node and an intermediary bias adjustment node;
a first bias adjustment diode including an anode coupled to the intermediary bias adjustment node and a cathode coupled to ground;
a second bias adjustment diode including a cathode coupled to the intermediary bias adjustment node and an anode;
a first bias adjustment resistor coupled between the anode of the second bias adjustment diode and the bias adjustment output node; and
a second bias adjustment resistor coupled between the bias adjustment output node and a nominal bias voltage input node.
5. The circuitry of claim 4 wherein the termination voltage amplification circuitry comprises a variable gain amplifier.
6. The circuitry of claim 3 wherein the balanced amplifier comprises:
an RF input node and an RF output node;
an input termination impedance and the output termination impedance;
a first amplifying device;
a second amplifying device;
the input quadrature coupler including a first input node coupled to the input termination impedance, a second input node coupled to the RF input node, a first output node coupled to an input node of the first amplifying device, and a second output node coupled to an input node of the second amplifying device; and
the output quadrature coupler including a first input node coupled to an output node of the first amplifying device, a second input node coupled to an output node of the second amplifying device, a first output node coupled to the RF output node, and a second output node coupled to the output termination impedance.
7. The circuitry of claim 6 wherein the bias adjustment voltage generation circuitry comprises:
a bias adjustment input node and a bias adjustment output node;
a load resistor coupled between the bias adjustment input node and ground;
a bias adjustment capacitor coupled between the bias adjustment input node and an intermediary bias adjustment node;
a first bias adjustment diode including an anode coupled to the intermediary bias adjustment node and a cathode coupled to ground;
a second bias adjustment diode including a cathode coupled to the intermediary bias adjustment node and an anode;
a first bias adjustment resistor coupled between the anode of the second bias adjustment diode and the bias adjustment output node; and
a second bias adjustment resistor coupled between the bias adjustment output node and a nominal bias voltage input node.
8. The circuitry of claim 6 wherein each one of the first amplifying device and the second amplifying device comprise:
an input node and an output node;
an input matching network;
an output matching network; and
a field effect transistor (FET) coupled between the input matching network and the output matching network.
9. The circuitry of claim 8 wherein:
the input matching network is coupled between the input node and a gate contact of the FET;
the output matching network is coupled between a drain contact of the FET and the output node; and
a source contact of the FET is coupled to ground.
10. The circuitry of claim 1 wherein the balanced amplifier comprises:
an RF input node and an RF output node;
an input termination impedance and the output termination impedance;
a first amplifying device;
a second amplifying device;
the input quadrature coupler including a first input node coupled to the input termination impedance, a second input node coupled to the RF input node, a first output node coupled to an input node of the first amplifying device, and a second output node coupled to an input node of the second amplifying device; and
the output quadrature coupler including a first input node coupled to an output node of the first amplifying device, a second input node coupled to an output node of the second amplifying device, a first output node coupled to the RF output node, and a second output node coupled to the output termination impedance.
11. The circuitry of claim 10 wherein each one of the first amplifying device and the second amplifying device comprise:
an input node and an output node;
an input matching network;
an output matching network; and
a field effect transistor (FET) coupled between the input matching network and the output matching network.
12. The circuitry of claim 11 wherein:
the input matching network is coupled between the input node and a gate contact of the FET;
the output matching network is coupled between a drain contact of the FET and the output node; and
a source contact of the FET is coupled to ground.
13. A radio frequency transmit chain comprising:
one or more driver stages; and
a final stage comprising:
a balanced amplifier comprising:
an input quadrature coupler;
an output quadrature coupler; and
a first amplifying element and a second amplifying element coupled between the input quadrature coupler and the output quadrature coupler; and
bias adjustment circuitry coupled to the balanced amplifier and configured to:
measure an RF termination voltage across an output termination impedance coupled to the output quadrature coupler of the balanced amplifier, wherein the RF termination voltage is proportional to a voltage standing wave ratio (VSWR) of the balanced amplifier; and
adjust a bias voltage supplied to the balanced amplifier based on the RF termination voltage.
14. The radio frequency transmit chain of claim 13 wherein the balanced amplifier and the bias adjustment circuitry are monolithically integrated on a semiconductor die.
15. The radio frequency transmit chain of claim 13 wherein the bias adjustment circuitry comprises:
termination voltage amplification circuitry configured to receive and amplify the RF termination voltage; and
bias adjustment voltage generation circuitry configured to generate a direct current (DC) bias adjustment voltage based on the amplified RF termination voltage.
16. The radio frequency transmit chain of claim 15 wherein the bias adjustment voltage generation circuitry comprises:
a bias adjustment input node and a bias adjustment output node;
a load resistor coupled between the bias adjustment input node and ground;
a bias adjustment capacitor coupled between the bias adjustment input node and an intermediary bias adjustment node;
a first bias adjustment diode including an anode coupled to the intermediary bias adjustment node and a cathode coupled to ground;
a second bias adjustment diode including a cathode coupled to the intermediary bias adjustment node and an anode;
a first bias adjustment resistor coupled between the anode of the second bias adjustment diode and the bias adjustment output node; and
a second bias adjustment resistor coupled between the bias adjustment output node and a nominal bias voltage input node.
17. The radio frequency transmit chain of claim 16 wherein the termination voltage amplification circuitry comprises a variable gain amplifier.
18. The radio frequency transmit chain of claim 15 wherein the balanced amplifier comprises:
an RF input node and an RF output node;
an input termination impedance and the output termination impedance;
a first amplifying device;
a second amplifying device;
the input quadrature coupler including a first input node coupled to the input termination impedance, a second input node coupled to the RF input node, a first output node coupled to an input node of the first amplifying device, and a second output node coupled to an input node of the second amplifying device; and
the output quadrature coupler including a first input node coupled to an output node of the first amplifying device, a second input node coupled to an output node of the second amplifying device, a first output node coupled to the RF output node, and a second output node coupled to the output termination impedance.
19. The radio frequency transmit chain of claim 18 wherein the bias adjustment voltage generation circuitry comprises:
a bias adjustment input node and a bias adjustment output node;
a load resistor coupled between the bias adjustment input node and ground;
a bias adjustment capacitor coupled between the bias adjustment input node and an intermediary bias adjustment node;
a first bias adjustment diode including an anode coupled to the intermediary bias adjustment node and a cathode coupled to ground;
a second bias adjustment diode including a cathode coupled to the intermediary bias adjustment node and an anode;
a first bias adjustment resistor coupled between the anode of the second bias adjustment diode and the bias adjustment output node; and
a second bias adjustment resistor coupled between the bias adjustment output node and a nominal bias voltage input node.
20. The radio frequency transmit chain of claim 18 wherein each one of the first amplifying device and the second amplifying device comprise:
an input node and an output node;
an input matching network;
an output matching network; and
a field effect transistor (FET) coupled between the input matching network and the output matching network.
21. The radio frequency transmit chain of claim 20 wherein:
the input matching network is coupled between the input node and a gate contact of the FET;
the output matching network is coupled between a drain contact of the FET and the output node; and
a source contact of the FET is coupled to ground.
22. The radio frequency transmit chain of claim 13 wherein the balanced amplifier comprises:
an RF input node and an RF output node;
an input termination impedance and the output termination impedance;
a first amplifying device;
a second amplifying device;
the input quadrature coupler including a first input node coupled to the input termination impedance, a second input node coupled to the RF input node, a first output node coupled to an input node of the first amplifying device, and a second output node coupled to an input node of the second amplifying device; and
the output quadrature coupler including a first input node coupled to an output node of the first amplifying device, a second input node coupled to an output node of the second amplifying device, a first output node coupled to the RF output node, and a second output node coupled to the output termination impedance.
23. The radio frequency transmit chain of claim 22 wherein each one of the first amplifying device and the second amplifying device comprise:
an input node and an output node;
an input matching network;
an output matching network; and
a field effect transistor (FET) coupled between the input matching network and the output matching network.
24. The radio frequency transmit chain of claim 23 wherein:
the input matching network is coupled between the input node and a gate contact of the FET;
the output matching network is coupled between a drain contact of the FET and the output node; and
a source contact of the FET is coupled to ground.