Patent Assignment
Reel/Frame 066236/0086
Assignment of Assignor's Interest
Recorded: 2023-12-29
Pages: 65
Assignor
WOLFSPEED, INC.
Executed: 2023-12-06
Assignee
MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.
100 CHELMSFORD STREET, LOWELL, MASSACHUSETTS, 01851
Covered Properties
(255)
Series-Connected Microwave Power Amplifiers with Voltage Feedback and Method of Operation for the Same
Patent:
5,945,879 →
Application:
09/019,329 →
Group Iii Nitride Based Fets and Hemts with Reduced Trapping and Method for Producing the Same
A1Gan-GaN HEMTs with A1N barrier/spacer layer
Application:
60/290,195 →
Group-Iii Nitride Based High Electron Mobility Transistor (Hemt) with Barrier/Spacer Layer
Inverted Coplanar Waveguide Coupler with Integral Microstrip Connection Ports
Voltage Limiting Protection for High Frequency Power Device
N-Way Rf Power Amplifier with Increased Backoff Power and Power Added Efficiency
N-Way Rf Power Amplifier Circuit with Increased Back-Off Capability and Power Added Efficiency Using Selected Phase Lengths and Output Impedances
N-Way Rf Power Amplifier Circuit with Increased Back-Off Capability and Power Added Efficiency Using Unequal Input Power Division
Packaged Rf Power Transistor Having Rf Bypassing/Output Matching Network
Rf Transistor Amplifier Linearity Using Suppressed Third Order Transconductance
Single Package Multi-Chip Rf Power Amplifier
Integrated Nitride-Based Acoustic Wave Devices and Methods of Fabricating Integrated Nitride-Based Acoustic Wave Devices
Integrated Nitride and Silicon Carbide-Based Devices
Integrated Nitride and Silicon Carbide-Based Devices
Low Resistance Tunnel Junctions in Wide Band Gap Materials and Method of Making Same
Semiconductor Devices Having Thermal Spacers
Fabrication of single or multiple gate field plates
Application:
60/501,557 →
Fabrication of Single or Multiple Gate Field Plates
Fabrication of Single or Multiple Gate Field Plates
Fabrication of Single or Multiple Gate Field Plates
Nitride Heterojunction Transistors Having Charge-Transfer Induced Energy Barriers and Methods of Fabricating the Same
High Electron Mobility Transistor
High efficiency switch-mode power amplifier
Application:
60/640,269 →
High Efficiency Switch-Mode Power Amplifier
High Efficiency Switch-Mode Power Amplifier
High Power Density and/or Linearity Transistors
Field Effect Transistors (Fets) Having Multi-Watt Output Power at Millimeter-Wave Frequencies
Group Iii Nitride Field Effect Transistors (Fets) Capable of Withstanding High Temperature Reverse Bias Test Conditions
Group Iii Nitride Field Effect Transistors (Fets) Capable of Withstanding High Temperature Reverse Bias Test Conditions
Group Iii Nitride Field Effect Transistors (Fets) Capable of Withstanding High Temperature Reverse Bias Test Conditions
High Efficiency and/or High Power Density Wide Bandgap Transistors
Nitride Based Transistors for Millimeter Wave Operation
Heterojunction Transistors Including Energy Barriers
Heterojunction Transistors Having Barrier Layer Bandgaps Greater Than Channel Layer Bandgaps and Related Methods
High Power Doherty Amplifier Using Multi-Stage Modules
Aluminum Free Group Iii-Nitride Based High Electron Mobility Transistors
Metal Semiconductor Field Effect Transistors (Mesfets) Having Channels of Varying Thicknesses and Related Methods
Switch Mode Power Amplifier Using Mis-Hemt with Field Plate Extension
Switch Mode Power Amplifier Using Mis-Hemt with Field Plate Extension
High Power, High Frequency Switch Circuits Using Strings of Power Transistors
Transistors having implanted channel layers and methods of fabricating the same
Application:
60/814,516 →
Transistors Having Implanted Channel Layers and Methods of Fabricating the Same
Metal-Semiconductor Field Effect Transistors (Mesfets) Having Self-Aligned Structures
Bulk Acoustic Device and Method for Fabricating
Rf Power Transistor Packages with Internal Harmonic Frequency Reduction and Methods of Forming Rf Power Transistor Packages with Internal Harmonic Frequency Reduction
Rf Transistor Packages with Internal Stability Network and Methods of Forming Rf Transistor Packages with Internal Stability Networks
Progressive Power Generating Amplifiers
Integrated Circuit with Parallel Sets of Transistor Amplifiers Having Different Turn on Power Levels
Varactor Diode with Doped Voltage Blocking Layer
Gate Electrodes for Millimeter-Wave Operation and Methods of Fabrication
Methods of Fabricating Transistors Including Self-Aligned Gate Electrodes and Source/Drain Regions
Rf Transistor Packages with Internal Stability Network Including Intra-Capacitor Resistors and Methods of Forming Rf Transistor Packages with Internal Stability Networks Including Intra-Capacitor Resistors
High Power Gallium Nitride Field Effect Transistor Switches
Low Noise Amplifiers Including Gallium Nitride High Electron Mobility Transistors
Application:
61/346,757 →
Low Noise Amplifiers Including Group Iii Nitride Based High Electron Mobility Transistors
Matching Network for Transmission Circuitry
Matching Network for Transmission Circuitry
Enhanced Doherty Amplifier
Enhanced Doherty Amplifier
Rf Transistor Packages with High Frequency Stabilization Features and Methods of Forming Rf Transistor Packages with High Frequency Stabilization Features
Mmic Power Amplifier
Gan Amplifier for Wifi Applications
Bias Adjustment Circuitry for Balanced Amplifiers
Bandwidth Limiting Methods for Gan Power Transistors
Over-Mold Plastic Packaged Wide Band-Gap Power Transistors and Mmics
Bias Circuits and Methods for Depletion Mode Semiconductor Devices
Transistor with Bypassed Gate Structure Field
Semiconductor Devices Having a Plurality of Unit Cell Transistors That Have Smoothed Turn-on Behavior and Improved Linearity
Bypassed Gate Transistors Having Improved Stability
Bypassed Gate Transistors Having Improved Stability
Bypassed Gate Transistors Having Improved Stability
Bypassed Gate Transistors Having Improved Stability
High Power Mmic Devices Having Bypassed Gate Transistors
Transistor Amplifiers Having Node Splitting for Loop Stability and Related Methods
Packaged Electronic Circuits Having Moisture Protection Encapsulation and Methods of Forming Same
Packaged Electronic Circuits Having Moisture Protection Encapsulation and Methods of Forming Same
Switch Circuits Having Integrated Overdrive Protection and Related Transmit/Receive Circuits and Mmic Amplifiers
Switch Circuits Having Integrated Overdrive Protection and Related Transmit/Receive Circuits and Mmic Amplifiers
Broadband Harmonic Matching Network Using Low-Pass Type Broadband Matching
Rf Power Transistor with Internal Bias Feed
Patent:
6,734,728 →
Application:
10/324,694 →
Single Chip Push-Pull Power Transistor Device
Gain and Bandwidth Enhancement for Rf Power Amplifier Package
Output Matched Ldmos Power Transistor Device
Patent:
6,177,834 →
Application:
09/204,666 →
Automatic Ldmos Biasing with Long Term Hot Carrier Compensation
Adjustable Gain Amplifier Arrangement with Relaxed Manufacturing Constraints
Differential Amplifier Arrangement with Current Regulating Circuit and Method for Operating a Differential Amplifier Arrangement
Monolithically Integrated Power Amplifier Device
Inductance Device
Patent:
6,194,987 →
Application:
09/274,326 →
Gate Biasing Arrangement to Temperature Compensate a Quiescent Current of a Power Transistor
Patent:
6,288,596 →
Application:
09/489,947 →
Balun
Patent:
6,441,696 →
Application:
09/612,129 →
Output Match Transistor
Semiconductor Power Device with Bias Circuit
Stripline Balun
Flange for Semiconductor Die
Flange for Semiconductor Die
Wideband Doherty Amplifier Circuit
Patent:
8,193,857 →
Application:
13/037,813 →
Power Transistor Output Match Network with High Q Rf Path and Low Q Low Frequency Path
Wideband Doherty Amplifier Circuit Having a Constant Impedance Combiner
Wideband Doherty Amplifier Circuit with Impedance Combiner
Rf Device with Compensatory Resonator Matching Topology
Wideband Doherty Amplifier Circuit with Peaking Impedance Absorption
Doherty Amplifier Circuit with Phase-Controlled Load Modulation
Input Match Network for a Power Circuit
Patent:
8,736,379 →
Application:
13/763,373 →
Input Match Network with Rf Bypass Path
Hybrid Semiconductor Package
Transformer Input Matched Transistor
Semiconductor Device Package Having Asymmetric Chip Mounting Area and Lead Widths
Application:
62/002,348 →
Semiconductor Device Package Having Asymmetric Chip Mounting Area and Lead Widths
Inductively Coupled Transformer with Tunable Impedance Match Network
Multi-Die Package Having Different Types of Semiconductor Dies Attached to the Same Thermally Conductive Flange
Package with Different Types of Semiconductor Dies Attached to a Flange
Package with Different Types of Semiconductor Dies Attached to a Flange
PCB Based Semiconductor Package Having Integrated Electrical Functionality
RF Device Package with Integrated Hybrid Coupler
Patent:
9,628,032 →
Application:
14/966,474 →
PCB Based Semiconductor Package with Impedance Matching Network Elements Integrated Therein
PCB Based Semiconductor Package with Impedance Matching Network Elements Integrated Therein
Pcb Based Semiconductor Device
LC Network for a Power Amplifier with Selectable Impedance
Lc Network for a Power Amplifier with Selectable Impedance
Embedded Harmonic Termination on High Power RF Transistor
Patent:
9,899,967 →
Application:
15/421,567 →
RF Amplifier Package with Biasing Strip
Patent:
10,141,303 →
Application:
15/709,532 →
RF Amplifier Package with Biasing Strip
Broadband Harmonic Matching Network
Patent:
10,122,336 →
Application:
15/709,593 →
Broadband Harmonic Matching Network
RF Power Amplifier with Combined Baseband, Fundamental and Harmonic Tuning Network
RF Power Amplifier with Frequency Selective Impedance Matching Network
RF Power Amplifier with Frequency Selective Impedance Matching Network
Semiconductor Devices Having a Plurality of Unit Cell Transistors That Have Smoothed Turn-on Behavior and Improved Linearity
Semiconductor Devices Having Unit Cell Transistors with Smoothed Turn-on Behavior and Improved Linearity
Monolithic Microwave Integrated Circuits Having Both Enhancement-Mode and Depletion Mode Transistors
Patent:
10,516,043 →
Application:
16/039,370 →
Monolithic Microwave Integrated Circuits Having Both Enhancement-Mode and Depletion Mode Transistors
Monolithic Microwave Integrated Circuits Having Both Enhancement-Mode and Depletion Mode Transistors
High Power Transistor with Interior-Fed Gate Fingers
Patent:
10,483,352 →
Application:
16/032,571 →
High Power Transistor with Interior-Fed Gate Fingers
Transistor Level Input and Output Harmonic Terminations
Transistor Level Input and Output Harmonic Terminations
Radio Frequency Transistor Amplifiers and Other Multi-Cell Transistors Having Gaps and/or Isolation Structures Between Groups of Unit Cell Transistors
Robust Integrated Circuit Package
Robust Electronics Mounting Device
Packaged Transistor Devices with Input-Output Isolation and Methods of Forming Packaged Transistor Devices with Input-Output Isolation
Packaged Transistor Devices with Input-Output Isolation and Methods of Forming Packaged Transistor Devices with Input-Output Isolation
High Power Transistor with Interior-Fed Fingers
High Power Transistor with Interior-Fed Fingers
Asymmetric Doherty Amplifier Circuit with Shunt Reactances
Radio Frequency Transistor Amplifiers and Other Multi-Cell Transistors Having Isolation Structures
Radio Frequency Transistor Amplifiers and Other Multi-Cell Transistors Having Isolation Structures
Radio Frequency Transistor Amplifiers and Other Multi-Cell Transistors Having Isolation Structures
Bias Voltage Connections in Rf Power Amplifier Packaging
In-Transistor Load Modulation
Drain and/or Gate Interconnect and Finger Structure
Drain and/or Gate Interconnect and Finger Structure
Drain and/or Gate Interconnect and Finger Structure
Doherty Amplifier Circuit with Integrated Harmonic Termination
Reduced-Length Bond Pads for Broadband Power Amplifiers
Radio Frequency Transistor Amplifiers Having Engineered Instrinsic Capacitances for Improved Performance
Radio Frequency Transistor Amplifiers Having Engineered Intrinsic Capacitances for Improved Performance
Multi-Stage Decoupling Networks Integrated with On-Package Impedance Matching Networks for RF Power Amplifiers
Radio Frequency Amplifiers Having Improved Shunt Matching Circuits
Group III HEMT and Capacitor That Share Structural Features
High Electron Mobility Transistors and Power Amplifiers Including Said Transistors Having Improved Performance and Reliability
High Electron Mobility Transistors and Power Amplifiers Including Said Transistors Having Improved Performance and Reliability
Semiconductor Having a Backside Wafer Cavity for Radio Frequency (RF) Passive Device Integration and/or Improved Cooling and Process of Implementing the Same
Device Carrier Configured for Interconnects, a Package Implementing a Device Carrier Having Interconnects, and Processes of Making the Same
Group Iii Nitride-Based Radio Frequency Amplifiers Having Back Side Source, Gate and/or Drain Terminals
Application:
63/004,962 →
Group Iii Nitride-Based Radio Frequency Amplifiers Having Back Side Source, Gate and/or Drain Terminals
Multi Level Radio Frequency (Rf) Integrated Circuit Components Including Passive Devices
Application:
63/004,758 →
Multi Level Radio Frequency (Rf) Integrated Circuit Components Including Passive Devices
Radio Frequency Power Circuits Utilizing Coaxial Resonators for Video Bandwidth Improvements and Circuit Size Reduction and a Process of Implementing the Same
Radio Frequency (Rf) Transistor Amplifier Packages with Improved Isolation and Lead Configurations
Packaging for Rf Transistor Amplifiers
Radio Frequency Transistor Amplifiers Having Leadframes with Integrated Shunt Inductors and/or Direct Current Voltage Source Inputs
Radio Frequency Package Implementing a Window Frame with Edge Plating and Processes of Implementing the Same
Semiconductor Device With Isolation And/Or Protection Structures
Stacked Rf Circuit Topology
Application:
63/004,760 →
Stacked Rf Circuit Topology
Group Iii Nitride-Based Radio Frequency Transistor Amplifiers Having Source, Gate and/or Drain Conductive Vias
Application:
63/004,985 →
Group Iii Nitride-Based Radio Frequency Transistor Amplifiers Having Source, Gate and/or Drain Conductive Vias
Methods for Pillar Connection on Frontside and Passive Device Integration on Backside of Die
Methods for Pillar Connection on Frontside and Passive Device Integration on Backside of Die
Hybrid RF Integrated Circuit Device
Integrated Doherty Amplifier with Added Isolation Between the Carrier and the Peaking Transistors
Wideband Rf Short/Dc Block Circuit for Rf Devices and Applications
Stacked Rf Circuit Topology Using Transistor Die with Through Silicon Carbide Vias on Gate and/or Drain
Application:
63/004,766 →
Stacked Rf Circuit Topology Using Transistor Die with Through Silicon Carbide Vias on Gate and/or Drain
Stacked Rf Circuit Topology Using Transistor Die with Through Silicon Carbide Vias on Gate and/or Drain
Application:
18/502,334 →
Publication:
US US20240071962A1
Rf Amplifier Devices and Methods of Manufacturing
Application:
63/004,765 →
Rf Amplifier Devices Including Interconnect Structures and Methods of Manufacturing
Rf Amplifier Devices Including Top Side Contacts and Methods of Manufacturing
Rf Amplifier Devices and Methods of Manufacturing Including Modularized Designs with Flip Chip Interconnections
Radio Frequency Transistor Amplifiers Having Multi-Layer Encapsulations That Include Functional Electrical Circuits
Die-To-Die Isolation Structures for Packaged Transistor Devices
Wirebond-Constructed Inductors
Rf Amplifiers Having Shielded Transmission Line Structures
Rf Amplifiers Having Shielded Transmission Line Structures
Multi-Zone Radio Frequency Transistor Amplifiers
Multi-Zone Radio Frequency Transistor Amplifiers
Radio Frequency Amplifier Implementing an Input Baseband Enhancement Circuit and a Process of Implementing the Same
Packaged Rf Power Device with Pcb Routing Outside Protective Member
Device Packages with Uniform Components and Methods of Forming the Same
High Output Power Density Radio Frequency Transistor Amplifiers in Flat No-Lead Overmold Packages
Bias Circuits and Improved Linearity Bias Schemes for Rf Power Devices
Patent:
11,281,245 →
Application:
17/159,825 →
Output-Integrated Transistor Amplifier Device Packages Incorporating Internal Connections
Field Effect Transistor with Enhanced Reliability
High Electron Mobility Transistors Having Improved Performance
Transistors Including Semiconductor Surface Modification and Related Fabrication Methods
Methods of Manufacturing High Electron Mobility Transistors Having a Modified Interface Region
Output-Integrated Transistor Device Packages
Amplifier Device Packages Incorporating Internal Couplers
High Performance Semiconductor Device
Integrated Passive Device (Ipd) Components and a Package and Processes Implementing the Same
Integrated Passive Device (Ipd) Components and a Package and Processes Implementing the Same
Metal Pillar Connection Topologies for Heterogeneous Packaging
Compensation of Trapping in Field Effect Transistors
Packaged Transistor Amplifiers That Include Integrated Passive Device Matching Structures Having Distributed Shunt Inductances
Group Iii Nitride Based Depletion Mode Differential Amplifiers and Related Rf Transistor Amplifier Circuits
Group Iii Nitride-Based Monolithic Microwave Integrated Circuits Having Multi-Layer Metal-Insulator-Metal Capacitors
Monolithic Microwave Integrated Circuit Device with Internal Decoupling Capacitor
Configurable Metal - Insulator - Metal Capacitor and Devices
Device Having a Coupled Interstage Transformer and Process Implementing the Same
Bypassed Gate Transistors Having Improved Stability
Bypassed Gate Transistors Having Improved Stability
Application:
18/121,628 →
Publication:
US US20230253490A1
Multi-Typed Integrated Passive Device (Ipd) Components and Devices and Processes Implementing the Same
Methods of Forming Packaged Semiconductor Devices and Leadframes for Semiconductor Device Packages
Ipd Components Having Sic Substrates and Devices and Processes Implementing the Same
Plasma-Based Barrier Layer Removal Method for Increasing Peak Transconductance While Maintaining on-State Resistance and Related Devices
Field Effect Transistor with Stacked Unit Subcell Structure
Modular Power Transistor Component Assemblies with Flip Chip Interconnections
Application:
17/848,500 →
Publication:
US US20230420430A1
High Electron Mobility Transistors Having Reduced Drain Current Drift and Methods of Fabricating Such Devices
Radio Frequency Power Amplifier Implementing a Gain Equalizer and a Process of Implementing the Same
Silicon Carbide Based Integrated Passive Devices for Impedence Matching of Radio Frequency Power Devices and Process of Implementing the Same
Transistor Die Including Matching Circuit
Application:
17/900,652 →
Publication:
US US20240072732A1
Transistor Amplifier with Pcb Routing and Surface Mounted Transistor Die
High Frequency, High Temperature Transistor Devices
Application:
18/071,768 →
Publication:
US US20240178311A1
Radio Frequency Power Amplifier Implementing an Off Mode Output Impedance Control and a Process of Implementing the Same
Field Effect Transistor with Integrated Series Capacitance
Application:
18/466,242 →
Publication:
US US20240105712A1
Metal-Insulator-Metal Capacitor Device with Integrated Wire Bonding Surface
Application:
17/952,267 →
Publication:
US US20240105763A1
Rf Amplifiers with Improved Stability by Source Inductance Adjustment
Application:
18/483,159 →
Publication:
US US20240145414A1
Barrier Structure for Sub-100 Nanometer Gate Length Devices
Application:
17/951,711 →
Publication:
US US20240105824A1
Integrated Passive Devices (Ipd) Having a Baseband Damping Resistor for Radiofrequency Power Devices and Devices and Processes Implementing the Same
Packaged Flip Chip Radio Frequency Transistor Amplifier Circuits
Application:
17/951,366 →
Publication:
US US20240105692A1
Stacked Integrated Passive Device
Methods of Forming High Electron Mobility Transistors with Controlled Gate Length and High Electron Mobility Transistors with Controlled Gate Length
Application:
18/119,795 →
Publication:
US US20240304678A1
Component Configured with Intrinsic Shielding and Process of Implementing the Same
Packaged Device Having an Integrated Passive Device with Wafer Level Formed Connection to at Least One Semiconductor Device and Processes for Implementing the Same
Application:
18/334,527 →
Publication:
US US20240421053A1
Biasing Circuit for Radio Frequency Amplifier
Application:
18/358,394 →
Publication:
US US20250038714A1
Group III Nitride Doherty Amplifier Using Different Epitaxial Structures
Application:
18/213,682 →
Publication:
US US20240429870A1
Thermally Conductive Interposer, a Device Implementing a Thermally Conductive Interposer, and Processes for Implementing the Same
Application:
18/340,607 →
Publication:
US US20240429122A1
Packaged Flip Chip Integrated Passive Devices
Application:
18/466,300 →
Publication:
US US20250087653A1
Transistor with Gate Layout, Device Implementing the Transistor with Output Pre-Matching, and Process of Implementing the Same
Application:
18/461,980 →
Publication:
US US20250080063A1
Three-Way Doherty Amplifier
Application:
18/466,921 →
Publication:
US US20250096732A1
Power Amplifier Die
Application:
18/514,402 →
Publication:
US US20250167143A1
Doherty Amplifier with Isolation Structure
Application:
18/469,064 →
Publication:
US US20250096733A1
Compact Semiconductor Die with Group III Nitride-Based Amplifier
Application:
63/512,417 →
Broadband Decoupling Network
Related Assignments
(7)
Other recorded transfers of the patents in this record — the chain of ownership.
Confirmatory License
Mar 30, 2012
From: CALIFORNIA, UNIVERSITY OF
To: NAVY, SECRETARY OF THE UNITED STATES OF AMERICA
Reel/Frame 028164/0196 →
Change of Name
Aug 16, 2023
From: CREE, INC.
To: WOLFSPEED, INC.
Reel/Frame 064615/0365 →
Change of Name
Aug 16, 2023
From: CREE, INC.
To: WOLFSPEED,INC.
Reel/Frame 064601/0923 →
Assignment of Assignor's Interest
Aug 22, 2023
From: SHEPPARD, SCOTT T.; SAXLER, ADAM WILLIAM
To: CREE, INC.
Reel/Frame 064662/0803 →
Change of Name
Sep 19, 2024
From: CREE, INC.
To: WOLFSPEED, INC.
Reel/Frame 068995/0026 →
Change of Name
Oct 4, 2024
From: CREE, INC.
To: WOLFSPEED, INC.
Reel/Frame 069118/0541 →
Change of Name
Oct 4, 2024
From: CREE, INC.
To: WOLFSPEED, INC.
Reel/Frame 069116/0363 →