Radio frequency transistor amplifiers and other multi-cell transistors having isolation structures
A multi-cell transistor includes a semiconductor structure, a plurality of unit cell transistors that are electrically connected in parallel, each unit cell transistor extending in a first direction in the semiconductor structure, wherein the unit cell transistors are spaced apart from each other along a second direction, and an isolation structure that is positioned between a first group of the unit cell transistors and a second group of the unit cell transistors and that extends above the semiconductor structure.
1. A multi-cell transistor, comprising:
a semiconductor structure;
a plurality of unit cell transistors that are electrically connected in parallel, each unit cell transistor including a gate finger that extends in a first direction on a top surface of the semiconductor structure;
a gate runner that is electrically connected to a first gate finger of the gate fingers, the gate runner configured to be coupled to a gate signal at an interior position of the gate runner; and
an isolation structure on the top surface of the semiconductor structure between adjacent ones of the unit cell transistors, the isolation structure having a height from the top surface of the semiconductor structure that exceeds a height of the gate runner from the top surface of the semiconductor structure,
wherein the gate fingers of the unit cell transistors are spaced apart from each other along a second direction and arranged on the top surface of the semiconductor structure in a plurality of groups.
2. The multi-cell transistor of claim 1 , wherein the gate runner extends in the first direction at a level that is higher than the first gate finger relative to the top surface of the semiconductor structure.
3. The multi-cell transistor of claim 1 , wherein the isolation structure is electrically connected to a reference and/or ground signal.
4. The multi-cell transistor of claim 1 , further comprising a gate interconnect extending on the semiconductor structure in the first direction, wherein the gate interconnect is connected to the gate runner at the interior position of the gate runner.
5. The multi-cell transistor of claim 1 , wherein the isolation structure comprises an isolation element that extends vertically between the adjacent ones of the unit cell transistors.
6. The multi-cell transistor of claim 5 , wherein the isolation element comprises a conductive isolation material, a magnetic isolation material, or a lossy dielectric isolation material.
7. A multi-cell transistor, comprising:
a semiconductor structure;
a plurality of unit cell transistors that are electrically connected in parallel, each unit cell transistor including a gate finger that extends in a first direction on a top surface of the semiconductor structure;
a gate runner that is electrically connected to a first gate finger of the gate fingers, the gate runner configured to be coupled to a gate signal at an interior position of the gate runner; and
an isolation structure on the top surface of the semiconductor structure between adjacent ones of the unit cell transistors, the isolation structure having a height from the top surface of the semiconductor structure that exceeds a height of the gate runner from the top surface of the semiconductor structure,
wherein the first gate finger comprises two segments,
wherein the two segments of the first gate finger are physically separated from one another in the first direction, and
wherein the gate runner is electrically connected to each of the two segments of the first gate finger.
8. The multi-cell transistor of claim 7 , wherein the gate runner extends in the first direction at a level that is higher than the first gate finger relative to the top surface of the semiconductor structure.
9. The multi-cell transistor of claim 7 , wherein the isolation structure is electrically connected to a reference and/or ground signal.
10. The multi-cell transistor of claim 7 , further comprising a gate interconnect extending on the semiconductor structure in the first direction, wherein the gate interconnect is connected to the gate runner at the interior position of the gate runner.
11. The multi-cell transistor of claim 7 , wherein the isolation structure comprises an isolation element that extends vertically between the adjacent ones of the unit cell transistors.
12. The multi-cell transistor of claim 11 , wherein the isolation element comprises a conductive isolation material, a magnetic isolation material, or a lossy dielectric isolation material.
13. A multi-cell transistor, comprising:
a semiconductor structure;
a plurality of unit cell transistors that are electrically connected in parallel, each unit cell transistor comprising a gate finger that extends in a first direction on a top surface of the semiconductor structure;
a gate runner that is electrically connected to a first gate finger of the gate fingers, the gate runner configured to propagate a gate signal to the gate finger along two opposing directions of the gate runner, wherein the first gate finger comprises two segments; and
an isolation structure on the top surface of the semiconductor structure between adjacent ones of the unit cell transistors,
wherein the two segments of the first gate finger are physically separated from one another in the first direction, and
wherein the gate runner is electrically connected to each of the two segments of the first gate finger.
14. The multi-cell transistor of claim 13 , wherein the isolation structure has a height from the top surface of the semiconductor structure that exceeds a height of the gate runner from the top surface of the semiconductor structure.
15. The multi-cell transistor of claim 13 , wherein the isolation structure comprises a wall structure.
16. The multi-cell transistor of claim 13 , wherein the gate runner is electrically coupled to the first gate finger at an interior position of the first gate finger.
17. A multi-cell transistor, comprising:
a semiconductor structure;
a plurality of unit cell transistors that are electrically connected in parallel, each unit cell transistor comprising a gate finger and a drain finger that extend in a first direction on a top surface of the semiconductor structure;
a gate runner that extends in the first direction and is electrically connected to a first gate finger of the gate fingers, the gate runner electrically coupled to the first gate finger at an interior position of the first gate finger;
an isolation structure on the top surface of the semiconductor structure between adjacent ones of the unit cell transistors;
an input bond wire electrically connected to the first gate finger;
an output bond wire electrically connected to at least one of the drain fingers; and
a secondary isolation material extending in a second direction between the input bond wire and the output bond wire.
18. The multi-cell transistor of claim 17 , wherein the isolation structure is electrically connected to a ground signal.
19. The multi-cell transistor of claim 17 , further comprising a gate interconnect extending on the semiconductor structure in the first direction, wherein the gate interconnect is connected to the gate runner at an interior position of the gate runner.
20. The multi-cell transistor of claim 17 , wherein the isolation structure has a height from the top surface of the semiconductor structure that exceeds a height of the gate runner from the top surface of the semiconductor structure.