Patent Assignment
Reel/Frame 064601/0923
Change of Name
Recorded: 2023-08-16
Pages: 6
Assignor
CREE, INC.
Executed: 2021-10-01
Assignee
WOLFSPEED,INC.
4600 SILICON DRIVE, DURHAM, NORTH CAROLINA, 27703
Covered Properties
(53)
Integrated Nitride-Based Acoustic Wave Devices and Methods of Fabricating Integrated Nitride-Based Acoustic Wave Devices
Integrated Nitride and Silicon Carbide-Based Devices
Low Resistance Tunnel Junctions in Wide Band Gap Materials and Method of Making Same
Semiconductor Devices Having Thermal Spacers
Nitride Heterojunction Transistors Having Charge-Transfer Induced Energy Barriers and Methods of Fabricating the Same
High Efficiency Switch-Mode Power Amplifier
High Efficiency Switch-Mode Power Amplifier
High Power Density and/or Linearity Transistors
Field Effect Transistors (Fets) Having Multi-Watt Output Power at Millimeter-Wave Frequencies
Group Iii Nitride Field Effect Transistors (Fets) Capable of Withstanding High Temperature Reverse Bias Test Conditions
High Efficiency and/or High Power Density Wide Bandgap Transistors
Nitride Based Transistors for Millimeter Wave Operation
High Power Doherty Amplifier Using Multi-Stage Modules
Metal Semiconductor Field Effect Transistors (Mesfets) Having Channels of Varying Thicknesses and Related Methods
Switch Mode Power Amplifier Using Mis-Hemt with Field Plate Extension
High Power, High Frequency Switch Circuits Using Strings of Power Transistors
Transistors Having Implanted Channel Layers and Methods of Fabricating the Same
Metal-Semiconductor Field Effect Transistors (Mesfets) Having Self-Aligned Structures
Bulk Acoustic Device and Method for Fabricating
Rf Power Transistor Packages with Internal Harmonic Frequency Reduction and Methods of Forming Rf Power Transistor Packages with Internal Harmonic Frequency Reduction
Rf Transistor Packages with Internal Stability Network and Methods of Forming Rf Transistor Packages with Internal Stability Networks
Progressive Power Generating Amplifiers
Integrated Circuit with Parallel Sets of Transistor Amplifiers Having Different Turn on Power Levels
Gate Electrodes for Millimeter-Wave Operation and Methods of Fabrication
Methods of Fabricating Transistors Including Self-Aligned Gate Electrodes and Source/Drain Regions
Rf Transistor Packages with Internal Stability Network Including Intra-Capacitor Resistors and Methods of Forming Rf Transistor Packages with Internal Stability Networks Including Intra-Capacitor Resistors
High Power Gallium Nitride Field Effect Transistor Switches
Low Noise Amplifiers Including Group Iii Nitride Based High Electron Mobility Transistors
Matching Network for Transmission Circuitry
Rf Transistor Packages with High Frequency Stabilization Features and Methods of Forming Rf Transistor Packages with High Frequency Stabilization Features
Mmic Power Amplifier
Gan Amplifier for Wifi Applications
Bandwidth Limiting Methods for Gan Power Transistors
Over-Mold Plastic Packaged Wide Band-Gap Power Transistors and Mmics
Bias Circuits and Methods for Depletion Mode Semiconductor Devices
Transistor with Bypassed Gate Structure Field
Semiconductor Devices Having a Plurality of Unit Cell Transistors That Have Smoothed Turn-on Behavior and Improved Linearity
Bypassed Gate Transistors Having Improved Stability
High Power Mmic Devices Having Bypassed Gate Transistors
Transistor Amplifiers Having Node Splitting for Loop Stability and Related Methods
Packaged Electronic Circuits Having Moisture Protection Encapsulation and Methods of Forming Same
Switch Circuits Having Integrated Overdrive Protection and Related Transmit/Receive Circuits and Mmic Amplifiers
Semiconductor Devices Having a Plurality of Unit Cell Transistors That Have Smoothed Turn-on Behavior and Improved Linearity
Monolithic Microwave Integrated Circuits Having Both Enhancement-Mode and Depletion Mode Transistors
Patent:
10,516,043 →
Application:
16/039,370 →
Monolithic Microwave Integrated Circuits Having Both Enhancement-Mode and Depletion Mode Transistors
High Power Transistor with Interior-Fed Gate Fingers
Patent:
10,483,352 →
Application:
16/032,571 →
Transistor Level Input and Output Harmonic Terminations
Radio Frequency Transistor Amplifiers and Other Multi-Cell Transistors Having Gaps and/or Isolation Structures Between Groups of Unit Cell Transistors
Packaged Transistor Devices with Input-Output Isolation and Methods of Forming Packaged Transistor Devices with Input-Output Isolation
Radio Frequency Transistor Amplifiers and Other Multi-Cell Transistors Having Isolation Structures
Radio Frequency Transistor Amplifiers and Other Multi-Cell Transistors Having Isolation Structures
High Electron Mobility Transistors and Power Amplifiers Including Said Transistors Having Improved Performance and Reliability
Aluminum Free Group Iii-Nitride Based High Electron Mobility Transistors
Related Assignments
(4)
Other recorded transfers of the patents in this record — the chain of ownership.
Security Interest
Jun 30, 2023
From: WOLFSPEED, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION
Reel/Frame 064185/0755 →
Release of Security Interest in Patent Collateral at Reel/Frame No. 64185/0755
Dec 4, 2023
From: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: WOLFSPEED, INC.
Reel/Frame 065758/0625 →
Assignment of Assignor's Interest
Dec 29, 2023
From: WOLFSPEED, INC.
To: MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.
Reel/Frame 066236/0086 →
Release of Security Interest in Intellectual Property Collateral at Reel/Frame No. 64185/0755
Sep 30, 2025
From: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: WOLFSPEED, INC.
Reel/Frame 072989/0001 →