High power density and/or linearity transistors
View Patent ↗Field effect transistors having a power density of greater than 25 W/mm when operated at a frequency of at least 4 GHz are provided. The power density may be at least 30 W/mm when operated at 4 GHz. The power density of at least 30 W/mm may be provided at a drain voltage of 120 V. Transistors with a power density of at least 30 W/mm when operated at 8 GHz are also provided. The power density of at least 30 W/mm may be provided at a drain voltage of 120 V. Field effect transistors having a power density of greater than 20 W/mm when operated at a frequency of at least 10 GHz are also provided. Field effect transistors having a power density of at least 2.5 W/mm and a two tone linearity of at least −30 dBc of third order intermodulation distortion at a center frequency of at least 4 GHz and a power added efficiency (PAE) of at least 40% are also provided.
1. A field effect transistor having a power density of greater than 25 W/mm when operated at a frequency of at least 4 GHz.
2. The field effect transistor of claim 1 , wherein the power density is provided at a compression of not greater than 3 dB.
3. The field effect transistor of claim 1 , wherein the power density is at least 30 W/mm when operated at 4 GHz.
4. The field effect transistor of claim 3 , wherein the power density of at least 30 W/mm is provided at a drain voltage of 120 V.
5. The field effect transistor of claim 1 , wherein the power density is at least 30 W/mm when operated at 8 GHz.
6. The field effect transistor of claim 5 , wherein the power density of at least 30 W/mm is provided at a drain voltage of 120 V.
7. The field effect transistor of claim 1 , wherein the transistor comprises a high electron mobility transistor (HEMT).
8. The field effect transistor of claim 7 , wherein the transistor comprises a Group III-nitride HEMT.
9. The field effect transistor of claim 8 , wherein the Group III-nitride HEMT comprises:
a GaN channel layer;
an AlN layer on the GaN channel layer;
an AlGaN layer on the AlN layer;
a gate contact on the AlGaN layer;
source and drain contacts on the AlGaN layer;
an insulating layer on the gate contact; and
a field plate on the insulating layer and electrically coupled to the gate contact.
10. The field effect transistor of claim 9 , wherein the field plate has a field plate length (L F ) of from about 0.3 μm to about 1.1 μm.
11. The field effect transistor of claim 10 , wherein the field plate length is from 0.3–0.5 μm.
12. The field effect transistor of claim 10 , wherein the field plate length is from 0.9–1.1 μm.
13. A field effect transistor having a power density of greater than 20 W/mm when operated at a frequency of at least 10 GHz.
14. The field effect transistor of claim 13 , wherein the power density is provided at a compression of not greater than 3 dB.
15. The field effect transistor of claim 13 , wherein the power density of greater than 20 W/mm is provided at a drain voltage of 70 V.
16. The field effect transistor of claim 15 , wherein the transistor comprises a high electron mobility transistor (HEMT).
17. The field effect transistor of claim 16 , wherein the transistor comprises a Group III-nitride HEMT.
18. The field effect transistor of claim 17 , wherein the Group III-nitride HEMT comprises:
a GaN channel layer;
an AlN layer on the GaN channel layer;
an AlGaN layer on the AlN layer;
a gate contact on the AlGaN layer;
source and drain contacts on the AlGaN layer;
an insulating layer on the gate contact; and
a field plate on the insulating layer and electrically coupled to the gate contact.
19. The field effect transistor of claim 18 , wherein the field plate has a field plate length (L F ) of from about 0.3 μm to about 1.1 μm.
20. The field effect transistor of claim 19 , wherein the field plate length is from 0.3–0.5 μm.
21. The field effect transistor of claim 19 , wherein the field plate length is from 0.9–1.1 μm.
22. A field effect transistor having a power density of at least 2.5 W/mm and a two tone linearity of at least −30 dBc of third order intermodulation distortion (IM3) at a center frequency of at least 4 GHz and a power added efficiency (PAE) of at least 40% with IM3 of at least −30 dBc.
23. The field effect transistor of claim 22 , wherein the power density is provided at a compression of not greater than 3 dB.
24. The field effect transistor of claim 22 , wherein the drain voltage power density is provided at a drain voltage of 48 V.
25. The field effect transistor of claim 22 , wherein the PAE is at least 50%.
26. The field effect transistor of claim 22 , wherein the power density is at least 5 W/mm with IM3 of at least −30 dBc.
27. The field effect transistor of claim 22 , wherein the power density is provided at a drain voltage of 108 V.
28. The field effect transistor of claim 22 , wherein the power density is at least 10 W/mm with IM3 of at least −30 dBc.
29. The field effect transistor of claim 28 , wherein the power density is provided at a drain voltage of 108 V.
30. The field effect transistor of claim 22 , wherein the transistor comprises a high electron mobility transistor (HEMT).
31. The field effect transistor of claim 30 , wherein the transistor comprises a Group III-nitride HEMT.
32. The field effect transistor of claim 31 , wherein the Group III-nitride HEMT comprises:
a GaN channel layer;
an AlN layer on the GaN channel layer;
an AlGaN layer on the AlN layer;
a gate contact on the AlGaN layer; and
source and drain contacts on the AlGaN layer.
33. The field effect transistor of claim 32 , further comprising:
an insulating layer on the gate contact; and
a field plate on the insulating layer and electrically coupled to the gate contact.
34. The field effect transistor of claim 33 , wherein the field plate has a field plate length (L F ) of from about 0.3 μm to about 1.1 μm.
35. The field effect transistor of claim 34 , wherein the field plate length is about 0.7 μm.