High power MMIC devices having bypassed gate transistors
Monolithic microwave integrated circuits are provided that include a substrate having a transistor and at least one additional circuit formed thereon. The transistor includes a drain contact extending in a first direction, a source contact extending in the first direction in parallel to the drain contact, a gate finger extending in the first direction between the source contact and the drain contact and a gate jumper extending in the first direction. The gate jumper conductively connects to the gate finger at two or more locations that are spaced apart from each other along the first direction.
1. A monolithic microwave integrated circuit, comprising:
a substrate having a transistor and at least one additional circuit formed thereon, wherein the transistor includes:
a drain contact extending in a first direction;
a source contact extending in the first direction in parallel to the drain contact, the source contact spaced apart from the drain contact in a second direction that is perpendicular to the first direction;
a gate finger extending in the first direction between the source contact and the drain contact; and
a gate jumper extending in the first direction that electrically connects to the gate finger at two or more locations that are spaced apart from each other along the first direction,
wherein an area of a cross-section of the gate jumper in a plane that extends in the second direction and that is perpendicular to the first direction is at least five times greater than an area of a cross-section of the gate finger in the plane.
2. The monolithic microwave integrated circuit of claim 1 , wherein the at least one additional circuit is an impedance matching circuit and the transistor is a high electron mobility transistor.
3. The monolithic microwave integrated circuit of claim 1 , wherein the gate finger comprises a plurality of physically discontinuous gate finger segments that are electrically connected to each other through the gate jumper.
4. The monolithic microwave integrated circuit of claim 1 , wherein the gate jumper is at a different level above the substrate than the gate finger.
5. The monolithic microwave integrated circuit of claim 1 , wherein the source contact includes a plurality of discontinuous source contact segments that are electrically connected to each other.
6. The monolithic microwave integrated circuit of claim 5 , wherein the gate jumper extends over at least one of the source contact segments and is electrically insulated from the source contact.
7. The monolithic microwave integrated circuit of claim 6 , wherein the gate jumper does not extend over all of the source contact segments.
8. The monolithic microwave integrated circuit of claim 1 , wherein the monolithic microwave integrated circuit comprises an amplifier that includes at least one driver stage and an output stage, and wherein the output stage includes the transistor.
9. The monolithic microwave integrated circuit of claim 1 , wherein the gate jumper vertically overlaps at least one of the drain contact, the source contact and/or the gate finger.
10. The monolithic microwave integrated circuit of claim 1 , wherein a length of the gate jumper in the second direction is at least twice a length of the gate finger in the second direction.
11. The monolithic microwave integrated circuit of claim 1 , wherein the area of the cross-section of the gate jumper in the plane is at least twenty times greater than the area of the cross-section of the gate finger in the plane.
12. A monolithic microwave integrated circuit, comprising:
a substrate having a transistor and at least one additional circuit formed thereon, wherein the transistor includes:
a plurality of gate fingers that extend in a first direction and are spaced apart from each other in a second direction that is perpendicular to the first direction, each of the gate fingers comprising spaced-apart, generally collinear and electrically connected first and second gate finger segments, wherein the first gate finger segments are separated from the second gate finger segments in the first direction by a gap region.
13. The monolithic microwave integrated circuit of claim 12 , wherein the transistor further comprises:
a plurality of source contacts that extend in the first direction, each source contact extending between respective pairs of the gate fingers; and
a plurality of drain contacts that extend in the first direction, each drain contact extending between the gate fingers of the respective pairs of the gate fingers.
14. The monolithic microwave integrated circuit of claim 13 , further comprising:
a gate bus that is electrically connected to the gate fingers; and
a gate jumper that is electrically connected to the gate bus, wherein the gate jumper is interposed along an electrical path between at least one of the second gate finger segments and the gate bus.
15. The monolithic microwave integrated circuit of claim 14 , wherein the gate jumper vertically overlaps at least one of the drain contact, the source contact and/or the gate finger.
16. The monolithic microwave integrated circuit of claim 14 , wherein an area of a cross-section of the gate jumper in a plane that extends in the second direction and that is perpendicular to the first direction is at least five times greater than an area of a cross-section of the gate finger in the plane.
17. The monolithic microwave integrated circuit of claim 14 , wherein a length of the gate jumper in the second direction is at least twice a length of the gate finger in the second direction.
18. The monolithic microwave integrated circuit of claim 14 , wherein the gate jumper is at a different level above the substrate than the gate fingers.
19. The monolithic microwave integrated circuit of claim 18 , wherein the gate jumper extends over at least a portion of a first of the source contacts.
20. The monolithic microwave integrated circuit of claim 19 , wherein the first of the source contacts includes a plurality of discontinuous source contact segments.