Bypassed gate transistors having improved stability
A transistor includes a plurality of gate fingers that extend in a first direction and are spaced apart from each other in a second direction, each of the gate fingers comprising at least spaced-apart and generally collinear first and second gate finger segments that are electrically connected to each other. The first gate finger segments are separated from the second gate finger segments in the first direction by a gap region that extends in the second direction. A resistor is disposed in the gap region.
1. A transistor, comprising:
a source contact extending in a first direction;
a gate jumper extending in the first direction;
a gate bus extending in a second direction;
a gate finger that comprises a plurality of discontinuous gate finger segments; and
a plurality of spaced-apart lossy elements, each of which is electrically connected to the gate jumper;
wherein a first of the gate finger segments is connected to the gate jumper through a first of the lossy elements,
wherein the gate jumper extends parallel to a second of the gate finger segments and the second of the gate finger segments is electrically connected to the gate bus through a second of the lossy elements.
2. The transistor of claim 1 , wherein each lossy element is a gate resistor.
3. The transistor of claim 2 , wherein the discontinuous gate finger segments are collinear.
4. The transistor of claim 2 , further comprising:
a drain contact extending in the first direction adjacent the gate finger so that the gate finger extends between the source contact and the drain contact;
a second gate finger that comprises a plurality of discontinuous gate finger segments that are electrically connected to each other extending in the first direction so that the drain contact extends between the gate finger and the second gate finger; and
a second source contact that includes a plurality of discontinuous source contact segments that are electrically connected to each other extending in the first direction adjacent the second gate finger.
5. The transistor of claim 4 , further comprising an odd-mode resistor in a gap between two adjacent source contact segments of the second source contact.
6. The transistor of claim 4 , further comprising a gate signal distribution bar that extends between the gate jumper and a first of the gate finger segments of the gate finger and between the gate jumper and a first of the gate finger segments of the second gate finger.
7. The transistor of claim 6 , wherein the gate signal distribution bar is in a gap between two adjacent source contact segments of the source contact.
8. The transistor of claim 2 , wherein at least one of the gate resistors is farther from the gate bus than is the first of the gate finger segments.
9. The transistor of claim 1 , wherein the first of the lossy elements is in a gap between two adjacent gate finger segments.
10. The transistor of claim 1 , wherein the gate jumper only electrically connects some of the lossy elements to the gate bus.
11. A transistor, comprising:
a plurality of gate fingers that extend in a first direction and are spaced apart from each other in a second direction that is perpendicular to the first direction, each of the gate fingers comprising at least spaced-apart and generally collinear first and second gate finger segments that are electrically connected to each other, wherein the first gate finger segments are separated from the second gate finger segments in the first direction by a gap region that extends in the second direction; and
a resistor disposed in the gap region.
12. The transistor of claim 11 , further comprising:
a plurality of source contacts that extend in the first direction, each source contact including a plurality of discontinuous source contact segments, and each source contact extending between respective pairs of the gate fingers; and
a plurality of drain contacts that extend in the first direction, each drain contact extending between the gate fingers of the respective pairs of the gate fingers.
13. The transistor of claim 12 , further comprising:
a gate bus that is electrically connected to the gate fingers; and
a gate jumper that is electrically connected to the gate bus, wherein the gate jumper is interposed along electrical paths between and at least some of the gate finger segments and the gate bus.
14. The transistor of claim 13 , wherein the resistor comprises a gate resistor that is interposed on an electrical path between the gate jumper and the first gate finger segment of a first of the gate fingers.
15. The transistor of claim 14 , wherein the gate resistor is interposed along a first gate signal distribution bar that extends between the gate jumper and the first gate finger segment of the first of the gate fingers.
16. The transistor of claim 15 , further comprising an odd mode resistor that is interposed between the first gate signal distribution bar and a second gate signal distribution bar that is collinear with the first gate signal distribution bar.
17. The transistor of claim 12 , wherein the resistor comprises an odd mode resistor that is positioned between two adjacent ones of the source contact segments of one of the source contacts.
18. A transistor, comprising:
a first source contact extending in a first direction;
a second source contact extending in the first direction;
a third source contact extending in the first direction between the first and second source contacts;
a first gate jumper extending in the first direction over the first source contact;
a second gate jumper extending in the first direction over the second source contact;
a lossy element that is connected to the first gate jumper and the second gate jumper,
wherein each of the first through third source contacts comprises a plurality of electrically connected and discontinuous source contact segments, and
wherein the lossy element is positioned between adjacent ones of the discontinuous source contact segments of the third source contact.
19. The transistor of claim 18 , wherein the lossy element is a resistor.
20. The transistor of claim 19 , further comprising a gate finger that extends in the first direction, the gate finger comprising a plurality of discontinuous gate finger segments.
21. The transistor of claim 20 , further comprising a gate signal distribution bar that is interposed on an electrical path between the first gate jumper and a first of the gate finger segments.
22. The transistor of claim 21 , wherein the gate signal distribution bar is interposed along an electrical path between the first gate jumper and the resistor.