Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequencies
View Patent ↗High electron mobility transistors (HEMT) are provided having an output power of greater than 3.0 Watts when operated at a frequency of at least 30 GHz. The HEMT has a power added efficiency (PAE) of at least about 20 percent and/or a gain of at least about 7.5 dB. The total width of the HEMT is less than about 6.0 mm.
1. A high electron mobility transistor (HEMT), comprising:
a T-gate contact having a top portion and a base portion, a length of the top portion of the T gate contact being about 0.7 μm and a length of the base portion of the T gate contact being about 0.2 μm, wherein the HEMT has an output power of greater than 3.0 Watts when operated at a frequency of at least 30 GHz.
2. The HEMT of claim 1 having a power added efficiency (PAE) of at least about 20 percent.
3. The HEMT of claim 2 having a gain of at least about 7.5 dB.
4. The HEMI of claim 3 wherein the HEMT has a total width of less than about 6.0 mm.
5. The HEMT of claim 2 wherein the HEMT has a total width of less than about 6.0 mm.
6. The HEMT of claim 1 having a gain of at least about 7.5 dB.
7. The HEMT of claim 1 wherein the HEMT has a total width of less than about 6.0 mm.
8. The HEMT of claim 1 having an output power of at least about 3.6 Watts when operated at a frequency of about 30 GHz.
9. The HEMT of claim 8 having a power added efficiency (PAE) of at least about 26 percent and a gain of at least about 6 dB.
10. The HEMT of claim 1 having an output power of at least about 3.45 Watts when operated at a frequency of about 35 GHz.
11. The HEMT of claim 10 having a power added efficiency (PAE) of about 22 percent and a gain of at least about 4.9 dB.
12. The HEMT of claim 1 , wherein the HEMT comprises a Group III-nitride based HEMT.
13. The HEMT of claim 1 , wherein the HEMT comprises:
a GaN channel layer;
an AlN layer on the GaN channel layer;
an AlGaN layer on the AlN layer, wherein the T-gate contact is on the AlGaN layer;
an insulating layer on a surface of the HEMT; and
source and drain contacts on the AlGaN layer.
14. The HEMT of claim 13 , wherein the insulating layer comprises a silicon nitride (SiN) passivation layer.
15. The HEMT of claim 13 , wherein the HEMT further comprises an air-bridge on the HEMT.
16. The HEMT of claim 15 , further comprising fourteen gate fingers.
17. The HEMT of claim 1 , further comprising:
spaced apart source and drain contacts, the T-gate contact being between the source and drain contacts,
wherein a distance from the gate contact to the source contact is about 0.7 μm and wherein a distance from the gate contact to the drain contact is about 2.0 μm.
18. The HEMT of claim 1 , wherein wings of the T-gate contact extend out about 0.25 μm from the base of the T-gate.
19. A field effect transistor (FET), comprising:
a T-gate contact having a top portion and a base portion, a length of the top portion of the T gate contact being about 0.7 μm and a length of the base portion of the T gate contact being about 0.2 μm, wherein the FET has a total width of less than about 6.0 mm and an output power greater than 3.0 Watts when operated at a frequency of at least 30 GHz.
20. The FET of claim 19 , wherein the FET comprises a Group III-nitride based FET.
21. The FET of claim 20 , wherein the FET comprises a high electron mobility transistor (HEMT).
22. The FET of claim 21 having a power added efficiency (PAE) of at least about 20 percent.
23. The FET of claim 21 having a gain of at least about 7.5 dB.
24. The FET of claim 21 having a gain of at least about 7.5 dB.
25. The FET of claim 21 having an output power of about 3.6 Watts when operated at a frequency of about 30 GHz.
26. The FET of claim 24 having a power added efficiency (PAE) of about 26 percent and a gain of at least about 6 dB.
27. The FET of claim 21 having an output power of about 3.45 Watts when operated at a frequency of about 35 GHz.
28. The FET of claim 27 having a power added efficiency (PAE) of about 22 percent and a gain of at least about 4.9 dB.
29. The FET of claim 21 , wherein the FET comprises:
a GaN channel layer;
an AlN layer on the GaN channel layer;
an AlGaN layer on the AlN layer, wherein the T-gate contact is on the AlGaN layer;
an insulating layer on a surface of the FET; and
source and drain contacts on the AlGaN layer.
30. The FET of claim 29 , wherein the insulating layer comprises a silicon nitride (SiN) passivation layer.
31. The FET of claim 29 , wherein the FET further comprises an air-bridge on the FET.
32. The FET of claim 31 , further comprising fourteen gate fingers.
33. The FET of claim 19 , further comprising:
spaced apart source and drain contacts, the T-gate contact being between the source and drain contacts,
wherein a distance from the gate contact to the source contact is about 0.7 μm and wherein a distance from the gate contact to the drain contact is about 2.0 μm.
34. The FET of claim 19 , wherein wings of the T-gate contact extend out about 0.25 μm from the base of the T-gate.
35. A field effect transistor (FET), comprising:
a T-gate contact having a top portion and a base portion, a length of the top portion of the T gate contact being about 0.7 μm and a length of the base portion of the T gate contact being about 0.2 μm, wherein the FET has a total width of less than about 6.0 mm and a gain of at least about 7.5 dB when operated at a frequency of greater than about 30 GHz.
36. The FET of claim 35 , wherein the FET comprises a Group III-nitride based FET.
37. The FET of claim 36 , wherein the FET comprises a high electron mobility transistor (HEMT).
38. The FET of claim 37 having a power added efficiency (PAB) of at least about 20 percent.
39. The FET of claim 38 having an output power of greater than 3.0 Watts.
40. The FET of claim 37 having an output power of greater than 3.0 Watts.
41. The FET of claim 37 having an output power of about 3.6 Watts when operated at a frequency of about 30 GHz.
42. The FET of claim 41 having a power added efficiency (PAE) of about 26 percent and a gain of at least about 6 dB.
43. The FET of claim 37 having an output power of about 3.45 Watts when operated at a frequency of about 35 GHz.
44. The FET of claim 43 having a power added efficiency (PAE) of about 22 percent and a gain of at least about 4.9 dB.
45. The FET of claim 44 , wherein the FET further comprises an air-bridge on the FET.
46. The FET of claim 45 , further comprising fourteen gate fingers.
47. The FET of claim 37 , wherein the FET comprises:
a GaN channel layer;
an AlN layer on the GaN channel layer;
an AlGaN layer on the AlN layer, wherein the T-gate contact is on the AlGaN layer;
an insulating layer on a surface of the FET; and
source and drain contacts on the AlGaN layer.
48. The FET of claim 47 , wherein the insulating layer comprises a silicon nitride (SiN) passivation layer.
49. The FET of claim 35 , further comprising:
spaced apart source and drain contacts, the T-gate contact being between the source and drain contacts,
wherein a distance from the gate contact to the source contact is about 0.7 μm and wherein a distance from the gate contact to the drain contact is about 2.0 μm.
50. The FET of claim 35 , wherein wings of the T-gate contact extend out about 0.25 μm from the base of the T-gate.