Bias circuits and methods for depletion mode semiconductor devices
View Patent ↗A Radio Frequency (RF) amplifier includes a depletion mode semiconductor device having a gate, a bias device and an inverting circuit. The depletion mode semiconductor device may be a HEMT and/or a MESFET. The bias device is configured to generate a bias voltage. The inverting circuit is configured to generate an inverted bias voltage from the bias voltage, and to apply the inverted bias voltage to the gate. Related circuits and methods are described.
1. A Radio Frequency (RF) amplifier, comprising:
a first depletion mode semiconductor device including a first gate that is connected to an RF input signal;
a bias device that is configured to generate a bias voltage, the bias device comprising a second depletion mode semiconductor device comprising a second gate that is connected to a reference voltage; and
an inverting circuit that is configured to generate an inverted bias voltage from the bias voltage and to apply the inverted bias voltage to the first gate.
2. The RF amplifier according to claim 1 wherein the first and second depletion mode semiconductor devices are configured to have substantially the same electrical and thermal characteristics.
3. The RF amplifier according to claim 1 wherein the first and second depletion mode semiconductor devices have substantially the same threshold voltage.
4. The RF amplifier according to claim 1 further comprising a current setting circuit that is connected to the second depletion mode semiconductor device.
5. The RF amplifier according to claim 1 wherein the inverting circuit comprises a differential amplifier having an inverting input that is connected to the bias device and an output that is connected to the first gate.
6. The RF amplifier according to claim 5 wherein the differential amplifier is a unity gain differential amplifier.
7. The RF amplifier according to claim 1 further comprising a third depletion mode semiconductor device including a third gate, wherein the inverted bias voltage is also applied to the third gate.
8. The RF amplifier according to claim 1 wherein the bias device is configured to mirror a current in the first depletion mode semiconductor device and to provide the bias voltage for the first depletion mode semiconductor device based on the current that is mirrored.
9. The RF amplifier according to claim 1 further comprising an input terminal that is configured to receive the RF input signal and is connected to the first gate.
10. The RF amplifier according to claim 1 wherein the first depletion mode semiconductor device comprises a High Electron Mobility Transistor (HEMT) and/or a Metal Semiconductor Field Effect Transistor (MESFET).
11. A Radio Frequency (RF) amplifier, comprising:
a first depletion mode semiconductor device including a first gate that is connected to an RF input signal;
a second depletion mode semiconductor device including a second gate that is connected to a reference voltage and that is configured to generate a bias voltage; and
an inverting circuit that is connected between the second depletion mode semiconductor device and the first gate and that is configured to generate an inverted bias voltage for the first depletion mode semiconductor device from the bias voltage.
12. The RF amplifier according to claim 11 wherein the first and second depletion mode semiconductor devices are included in a common semiconductor die.
13. The RF amplifier according to claim 11 wherein the second depletion mode semiconductor device includes a source and a drain, and wherein the RF amplifier further comprises a current setting circuit that is connected to the source.
14. The RF amplifier according to claim 13 wherein the inverting circuit comprises a differential amplifier having an inverting input that is connected between the source and the current setting circuit, and an output that is connected to the first gate to provide the inverted bias voltage to the first gate.
15. The RF amplifier according to claim 11 further comprising a resistor that connects the second gate to the reference voltage.
16. The RF amplifier according to claim 11 further comprising a third depletion mode semiconductor device including a third gate, wherein the inverting circuit is also connected to the third gate.
17. A method of operating a Radio Frequency (RF) amplifier that comprises a depletion mode semiconductor device including a gate, the method comprising:
generating a mirrored current of the depletion mode semiconductor device and a bias voltage corresponding to the mirrored current;
inverting the bias voltage to generate an inverted bias voltage; and
applying an RF input signal and the inverted bias voltage to the gate.
18. The RF amplifier according to claim 7 wherein the first depletion mode semiconductor device includes a drain that is connected to the third gate of the third depletion mode semiconductor device.
19. The RF amplifier according to claim 16 wherein the first depletion mode semiconductor device includes a drain that is connected to the third gate of the third depletion mode semiconductor device.