Device having a coupled interstage transformer and process implementing the same

1. A device, comprising:

a metal submount;

a first transistor die arranged on said metal submount;

a second transistor die arranged on said metal submount;

a set of primary interconnects; and

a set of secondary interconnects,

wherein the set of primary interconnects and the set of secondary interconnects are arranged and configured to provide RF signal coupling between the first transistor die and the second transistor die by electromagnetic coupling to transfer an RF signal between the first transistor die and the second transistor die.

2. The device according to claim 1 wherein the set of primary interconnects and the set of secondary interconnects are configured to provide an interstage match.

3. The device according to claim 1 wherein the set of primary interconnects and the set of secondary interconnects comprise wires.

4. The device according to claim 1 wherein the set of primary interconnects and the set of secondary interconnects are configured as a DC block between the first transistor die and the second transistor die.

5. The device according to claim 1 wherein the set of primary interconnects and the set of secondary interconnects attenuate and/or filter lower frequency signals transferred between the first transistor die and the second transistor die.

6. The device according to claim 1

wherein the first transistor die is implemented as a driver stage transistor; and

wherein the second transistor die is implemented as a final stage transistor.

7. The device according to claim 1 wherein the set of primary interconnects and the set of secondary interconnects are configured as a transformer to provide RF signal coupling between the first transistor die and the second transistor die.

8. The device according to claim 1 wherein the set of primary interconnects and the set of secondary interconnects are configured to fanout between the first transistor die and the second transistor die.

9. The device according to claim 1

wherein the set of primary interconnects and the set of secondary interconnects comprise bond wires; and

wherein the set of primary interconnects and the set of secondary interconnects implemented to provide a desired impedance based on a respective number of the bond wires, a respective size of the bond wires, a respective width of the bond wires, and/or a respective diameter of the bond wires.

10. The device according to claim 1 wherein the set of primary interconnects and the set of secondary interconnects are configured as a DC block between the first transistor die and the second transistor die.

11. The device according to claim 1 wherein the set of primary interconnects and the set of secondary interconnects attenuate and/or filter lower frequency signals transferred between the first transistor die and the second transistor die.

12. The device according to claim 1

wherein the first transistor die is implemented as a driver stage transistor; and

wherein the second transistor die is implemented as a final stage transistor.

13. The device according to claim 1 wherein the set of primary interconnects and the set of secondary interconnects are configured as a transformer to provide RF signal coupling between the first transistor die and the second transistor die.

14. The device according to claim 1 wherein the set of primary interconnects and the set of secondary interconnects are configured to fanout between the first transistor die and the second transistor die.

15. The device according to claim 1 further comprising:

a first Integrated Passive Device (IPD) and a second Integrated Passive Device (IPD),

wherein the first transistor die connects to the first Integrated Passive Device (IPD) with one or more interconnects; and

wherein the second transistor die connects to the second Integrated Passive Device (IPD) with one or more interconnects.

16. The device according to claim 15

wherein the first Integrated Passive Device (IPD) connects to the second Integrated Passive Device (IPD) with the set of secondary interconnects; and

wherein the first Integrated Passive Device (IPD) connects to the second Integrated Passive Device (IPD) with the set of primary interconnects.

17. The device according to claim 15

wherein the first Integrated Passive Device (IPD) comprises an inter-digitated array of one or more interconnect pads; and

wherein the second Integrated Passive Device (IPD) comprises an inter-digitated array of one or more interconnect pads.

18. The device according to claim 15

wherein the first Integrated Passive Device (IPD) comprises an inter-digitated array of capacitors; and

wherein the second Integrated Passive Device (IPD) comprises an inter-digitated array capacitors.

19. The device according to claim 15

wherein the first Integrated Passive Device (IPD) comprises at least one capacitor; and

wherein the second Integrated Passive Device (IPD) comprises at least one capacitor.

20. The device according to claim 15 wherein the first Integrated Passive Device (IPD), the second Integrated Passive Device (IPD), the set of primary interconnects, and the set of secondary interconnects are configured to provide the RF signal from the first transistor die to the second transistor die.

21. A device, comprising:

a metal submount;

a first transistor die arranged on said metal submount;

a second transistor die arranged on said metal submount;

a set of primary interconnects; and

a set of secondary interconnects,

wherein the set of primary interconnects and the set of secondary interconnects are configured to provide RF signal coupling between the first transistor die and the second transistor die by electromagnetic coupling;

wherein the set of primary interconnects and the set of secondary interconnects comprise bond wires; and

wherein the set of primary interconnects and the set of secondary interconnects implemented to provide a desired impedance based on a respective number of the bond wires, a respective size of the bond wires, a respective width of the bond wires, and/or a respective diameter of the bond wires.

22. A device, comprising:

a metal submount;

a first transistor die arranged on said metal submount;

a second transistor die arranged on said metal submount;

a set of primary interconnects;

a set of secondary interconnects; and

a first Integrated Passive Device (IPD) and a second Integrated Passive Device (IPD),

wherein the set of primary interconnects and the set of secondary interconnects are configured to provide RF signal coupling between the first transistor die and the second transistor die by electromagnetic coupling;

wherein the first transistor die connects to the first Integrated Passive Device (IPD) with one or more interconnects; and

wherein the second transistor die connects to the second Integrated Passive Device (IPD) with one or more interconnects.

23. The device according to claim 22

wherein the first Integrated Passive Device (IPD) connects to the second Integrated Passive Device (IPD) with the set of secondary interconnects; and

wherein the first Integrated Passive Device (IPD) connects to the second Integrated Passive Device (IPD) with the set of primary interconnects.

24. The device according to claim 22

wherein the first Integrated Passive Device (IPD) comprises an inter-digitated array of one or more interconnect pads; and

wherein the second Integrated Passive Device (IPD) comprises an inter-digitated array of one or more interconnect pads.

25. The device according to claim 22

wherein the first Integrated Passive Device (IPD) comprises an inter-digitated array of capacitors; and

wherein the second Integrated Passive Device (IPD) comprises an inter-digitated array capacitors.

26. The device according to claim 22

wherein the first Integrated Passive Device (IPD) comprises at least one capacitor; and

wherein the second Integrated Passive Device (IPD) comprises at least one capacitor.

27. The device according to claim 22 wherein the first Integrated Passive Device (IPD), the second Integrated Passive Device (IPD), the set of primary interconnects, and the set of secondary interconnects are configured to provide the RF signal from the first transistor die to the second transistor die.