Granted Patent B2

US 12,224,217 · App. 16/811,161 · Granted Feb 11, 2025

Inventors: Richard Wilson (Morgan Hill, CA); Haedong Jang (San Jose, CA); Simon Ward (Morgan Hill, CA); Madhu Chidurala (Los Altos, CA)

Assignee: MACOM Technology Solutions Holdings, Inc.

H01L23/043H01L21/4817H01L21/4846H01L23/49562H01L23/49575

Abstract

Claims (83)

1. A radio frequency (RF) package, comprising:

a support having a semiconductor die attach region;

at least one semiconductor die;

a frame comprising an electrically insulative member having a lower side attached to the support and an upper side opposite the support;

the frame comprising an opening at least partially registered with said semiconductor die attach region;

the frame comprising an upper metallization having a first metallization and a second metallization at the upper side of the electrically insulative member and a lower metallization at the lower side of the electrically insulative member;

at least one discrete device arranged on the upper metallization, the at least one discrete device being configured as a radio frequency component, and the at least one discrete device having terminals connected to the first metallization and the second metallization; and

the frame comprising an electrically conductive edge connection within the opening of the frame connecting the upper metallization to the lower metallization.

2. The RF package of claim 1

wherein the second metallization forms a terminal of the RF package;

wherein the first metallization and the lower metallization are electrically connected by the electrically conductive edge connection at a region of the electrically insulative member within the opening of the frame; and

wherein the electrically conductive edge connection is structured and arranged to extend from the first metallization to the lower metallization.

3. The RF package of claim 1

wherein the electrically conductive edge connection comprises edge plating;

wherein the electrically conductive edge connection is structured and arranged to extend from the first metallization to the lower metallization; and

wherein the electrically conductive edge connection is arranged on inner edges of the frame within the opening of the frame.

4. The RF package of claim 1 further comprising:

a third metallization disposed on the electrically insulative member; and

a lid on the frame enclosing the opening,

wherein the third metallization forms a terminal of the RF package;

wherein the second metallization forms a terminal of the RF package;

wherein the upper metallization extends to an edge of the frame;

wherein the lower metallization extends an edge of the frame; and

wherein the edge of the frame comprises an electrically conductive edge connection.

5. The RF package of claim 4

wherein the second metallization forms a terminal of the RF package;

wherein the frame protrudes from between the lid and the support; and

wherein the electrically conductive edge connection is structured and arranged to extend from the upper metallization to the lower metallization.

6. The RF package of claim 1 , wherein the at least one semiconductor die is a GaN based high-electron-mobility transistor (HEMT).

7. The RF package of claim 1

wherein the second metallization forms a terminal of the RF package;

wherein the at least one discrete device comprises one or more of the following: a resistor, an inductor, and a capacitor;

wherein the electrically conductive edge connection is structured and arranged to extend from the upper metallization to the lower metallization; and

wherein the electrically conductive edge connection is arranged within a cavity of the frame.

8. The RF package of claim 1 further comprising at least one secondary device is configured to implement one or more of the following: an impedance matching circuit, a matching circuit, an input matching circuit, an output matching circuit, a harmonic filter, a harmonic termination, a coupler, a balun, a power combiner, a power divider, a radio frequency (RF) circuit, a radial stub circuit, a transmission line circuit, a fundamental frequency matching circuit, a baseband termination circuit, a second order harmonic termination circuit, a matching network, and an integrated passive device (IPD).

9. The RF package of claim 1 further comprising at least one multiple stage die implementing multiple paths.

10. The RF package of claim 1 being configured as a Doherty amplifier.

11. The RF package according to claim 1 , wherein:

the frame further comprises:

a second lower metallization at the lower side of the electrically insulative member and spaced apart from the lower metallization; and

a second electrically conductive edge plating connecting the second metallization to the second lower metallization,

wherein the second metallization forms a terminal of the RF package; and

wherein the second metallization and the second lower metallization are electrically connected by the second electrically conductive edge plating.

12. A process of implementing a radio frequency (RF) package, comprising:

configuring a support having a semiconductor die attach region;

providing at least one semiconductor die;

configuring a frame comprising an electrically insulative member having a lower side attached to the support and an upper side opposite the support;

configuring the frame to have an opening at least partially registered with said semiconductor die attach region;

configuring the frame with an upper metallization having a first metallization and a second metallization at the upper side of the electrically insulative member and a lower metallization at the lower side of the electrically insulative member;

arranging at least one discrete device on the upper metallization, the at least one discrete device being configured as a radio frequency component, and the at least one discrete device having terminals connected to the first metallization and the second metallization; and

configuring the frame with an electrically conductive edge connection within the opening of the frame connecting the upper metallization to the lower metallization.

13. The process of implementing a RF package of claim 12 further comprising connecting the first metallization and the lower metallization by the electrically conductive edge connection at a region of the electrically insulative member within the opening of the frame,

wherein the second metallization forms a terminal of the RF package; and

wherein the electrically conductive edge connection is structured and arranged to extend from the first metallization to the lower metallization.

14. The process of implementing a RF package of claim 12

wherein the electrically conductive edge connection comprises edge plating;

wherein the electrically conductive edge connection is structured and arranged to extend from the first metallization to the lower metallization; and

wherein the electrically conductive edge connection is arranged on inner edges of the frame within the opening of the frame.

15. The process of implementing a RF package of claim 12 further comprising:

configuring the frame to have a third metallization disposed on the electrically insulative member; and

arranging a lid on the frame enclosing the opening,

wherein the third metallization forms a terminal of the RF package;

wherein the second metallization forms a terminal of the RF package;

wherein the upper metallization extends to an edge of the frame; and

wherein the lower metallization extends to the edge of the frame; and

wherein the edge of the frame comprises an electrically conductive edge connection.

16. The process of implementing a RF package of claim 15

wherein the second metallization forms a terminal of the RF package;

wherein the frame protrudes from between the lid and the support; and

wherein the electrically conductive edge connection is structured and arranged to extend from the upper metallization to the lower metallization.

17. The process of implementing a RF package of claim 12 , wherein the at least one semiconductor die is a GaN based high-electron-mobility transistor (HEMT).

18. The process of implementing a RF package of claim 12 further comprising configuring the at least one discrete device to include one or more of the following: a resistor, an inductor, and a capacitor,

wherein the second metallization forms a terminal of the RF package;

wherein the electrically conductive edge connection is structured and arranged to extend from the upper metallization to the lower metallization; and

wherein the electrically conductive edge connection is arranged within a cavity of the frame.

19. The process of implementing a RF package of claim 12 further comprising implementing at least one secondary device as one or more of the following: an impedance matching circuit, a matching circuit, an input matching circuit, an output matching circuit, a harmonic filter, a harmonic termination, a coupler, a balun, a power combiner, a power divider, a radio frequency (RF) circuit, a radial stub circuit, a transmission line circuit, a fundamental frequency matching circuit, a baseband termination circuit, a second order harmonic termination circuit, a matching network, and an integrated passive device (IPD).

20. The process of implementing a RF package of claim 12 further comprising providing a multiple stage die implementing multiple paths.

21. The process of implementing a RF package of claim 12 further comprising configuring the RF package as a Doherty amplifier.

22. The process of implementing a RF package according to claim 12 , further comprising:

configuring a second lower metallization at the lower side of the electrically insulative member and spaced apart from the lower metallization; and

configuring a second electrically conductive edge plating connecting the second metallization to the second lower metallization,

wherein the second metallization forms a terminal of the RF package; and

wherein the second metallization and the second lower metallization are electrically connected by the second electrically conductive edge plating.

Assignments (3)

Continuity (1)

References Cited (13)