Patent Assignment
Reel/Frame 059085/0667
Change of Name
Recorded: 2022-02-14
Pages: 7
Assignor
CREE, INC.
Executed: 2021-10-04
Assignee
WOLFSPEED, INC.
4600 SILICON DRIVE, DURHAM, NORTH CAROLINA, 27703
Covered Properties
(86)
Output Match Transistor
Integrated Circuit Esd Protection
Wireless Telemetry for Instrumented Component
Semiconductor Power Device with Bias Circuit
Wireless Telemetry Circuit Structure for Measuring Temperature in High Temperature Environments
Stripline Balun
Printed Circuit Board for Harsh Environments
Low-Loss Noise-Resistant High-Temperature Gate Driver Circuits
Patent:
7,965,522 →
Application:
12/586,729 →
Flange for Semiconductor Die
Semiconductor Device with Protecting Film and Method of Fabricating the Semiconductor Device with Protecting Film
Normally-Off D-Mode Driven Direct Drive Cascode
Patent:
8,228,114 →
Application:
12/924,622 →
Instrumented Component for Wireless Telemetry
Coupled Inductor Output Filter
Patent:
8,427,120 →
Application:
13/068,229 →
Semiconductor Device and Fabrication Method for the Same
High Temperature Half Bridge Gate Driver
Voltage Regulator Circuitry Operable in a High Temperature Environment of a Turbine Engine
Hybrid Load Differential Amplifier Operable in a High Temperature Environment of a Turbine Engine
Chopper Circuitry Operable in a High Temperature Environment of a Turbine Engine
Electronic Circuitry for High-Temperature Environments
Flange for Semiconductor Die
Autonomous Temperature Accelerometer Sensor
Patent:
9,435,819 →
Application:
13/872,505 →
Silver Filled Trench Substrate for High Power and/or High Temperature Electronics
Patent:
9,615,452 →
Application:
13/891,720 →
High Temperature Magnetic Amplifiers
Patent:
9,118,289 →
Application:
13/891,787 →
Low Profile High Temperature Double Sided Flip Chip Power Packaging
Patent:
9,275,938 →
Application:
14/016,728 →
High Temperature Equalized Electrical Parasitic Power Packaging Method for Many Paralleled Semiconductor Power Devices
Patent:
9,095,054 →
Application:
14/054,089 →
Method for Reworkable Packaging of High Speed, Low Electrical Parasitic Power Electronics Modules Through Gate Drive Integration
Patent:
9,407,251 →
Application:
14/100,288 →
Apparatus Having Self Healing Liquid Phase Power Connects and Method Thereof
Patent:
9,728,868 →
Application:
14/176,494 →
Step Etched Metal Electrical Contacts
Patent:
9,967,977 →
Application:
14/308,283 →
Multi-Module, Scalable, High Power Density, Radiation-Hardened Power Converter Interface System
Patent:
9,419,448 →
Application:
14/308,308 →
Non Linear Resonant Switch Cell
Patent:
9,559,684 →
Application:
14/309,155 →
Low Profile, Highly Configurable, Current Sharing Paralleled Wide Band Gap Power Device Power Module
Active Energy Recovery Clamping Circuit to Improve the Performance of Power Converters
Patent:
9,647,563 →
Application:
14/634,252 →
PCB Based Semiconductor Package Having Integrated Electrical Functionality
Multi-Die Package Having Different Types of Semiconductor Dies Attached to the Same Thermally Conductive Flange
Method and Device for a High Temperature Vacuum-Safe Solder Stop Utilizing Laser Processing of Solderable Surfaces for an Electronic Module Assembly
Gallium Nitride High-Electron Mobility Transistors with P-Type Layers and Process for Making the Same
Low Profile, Highly Configurable, Current Sharing Paralleled Wide Band Gap Power Device Power Module
Power Modules Having an Integrated Clamp Circuit and Process Thereof
High Power Multilayer Module Having Low Inductance and Fast Switching for Paralleling Power Devices
Gallium Nitride High-Electron Mobility Transistors with Deep Implanted P-Type Layers in Silicon Carbide Substrates for Power Switching and Radio Frequency Applications and Process for Making the Same
Power Modules Having an Integrated Clamp Circuit and Process Thereof
RF Amplifier Package with Biasing Strip
Patent:
10,141,303 →
Application:
15/709,532 →
Method and Device for a High Temperature Vacuum-Safe Solder Resist Utilizing Laser Ablation of Solderable Surfaces for an Electronic Module Assembly
RF Amplifier Package with Biasing Strip
Gallium Nitride High-Electron Mobility Transistors with Deep Implanted P-Type Layers in Silicon Carbide Substrates for Power Switching and Radio Frequency Applications and Process for Making the Same
High Power Multilayer Module Having Low Inductance and Fast Switching for Paralleling Power Devices
High Power Multilayer Module Having Low Inductance and Fast Switching for Paralleling Power Devices
Structures for Reducing Electron Concentration and Process for Reducing Electron Concentration
Group Iii-Nitride High-Electron Mobility Transistors with Buried P-Type Layers and Process for Making the Same
Methods for Dicing Semiconductor Wafers and Semiconductor Devices Made by the Methods
Systems and Processes for Increasing Semiconductor Device Reliability
High Power Multilayer Module Having Low Inductance and Fast Switching for Paralleling Power Devices
Semiconductors with Improved Thermal Budget and Process of Making Semiconductors with Improved Thermal Budget
Semiconductors Having Die Pads with Environmental Protection and Process of Making Semiconductors Having Die Pads with Environmental Protection
Application:
16/704,644 →
Publication:
US 2021/0175138
Methods and Systems for Matching Both Dynamic and Static Parameters in Dies, Discretes, and/or Modules, and Methods and Systems Based on the Same
Radio Frequency Power Circuits Utilizing Coaxial Resonators for Video Bandwidth Improvements and Circuit Size Reduction and a Process of Implementing the Same
Semiconductor Having a Backside Wafer Cavity for Radio Frequency (RF) Passive Device Integration and/or Improved Cooling and Process of Implementing the Same
Device Carrier Configured for Interconnects, a Package Implementing a Device Carrier Having Interconnects, and Processes of Making the Same
System and Process for Implementing Accelerated Test Conditions for High Voltage Lifetime Evaluation of Semiconductor Power Devices
Radio Frequency Package Implementing a Window Frame with Edge Plating and Processes of Implementing the Same
Integrated Circuit Having Die Attach Materials with Channels and Process of Implementing the Same
Group III-Nitride High-Electron Mobility Transistors Configured with Recessed Source and/or Drain Contacts for Reduced On State Resistance and Process for Implementing the Same
Application:
16/876,752 →
Publication:
US 2021/0359118
High Power Multilayer Module Having Low Inductance and Fast Switching for Paralleling Power Devices
Radio Frequency Amplifier Implementing an Input Baseband Enhancement Circuit and a Process of Implementing the Same
Power Module Having an Elevated Power Plane with an Integrated Signal Board and Process of Implementing the Same
Packaged Transistor Having Die Attach Materials with Channels and Process of Implementing the Same
Methods and Systems for Component Analysis, Sorting, and Sequencing Based on Component Parameters and Devices Utilizing the Methods and Systems
Group III-Nitride High-Electron Mobility Transistors with Buried P-Type Layers and Process for Making the Same
Process, System, and Device for Determining a Related Product
Application:
17/138,193 →
Publication:
US 2022/0207464
High Power Multilayer Module Having Low Inductance and Fast Switching for Paralleling Power Devices
Group Iii-Nitride High-Electron Mobility Transistors with Gate Connected Buried P-Type Layers and Process for Making the Same
Power Component Configured for Improving Partial Discharge Performance and System and Process of Implementing the Same
Power Module Having Electrical Interconnections Using Mechanical Fittings and Process of Implementing the Same
Package with Different Types of Semiconductor Dies Attached to a Flange
Integrated Passive Device (Ipd) Components and a Package and Processes Implementing the Same
Circuits and Group Iii-Nitride Transistors with Buried P-Layers and Controlled Gate Voltages and Methods Thereof
Circuits and Group Iii-Nitride High-Electron Mobility Transistors with Buried P-Type Layers Improving Overload Recovery and Process for Implementing the Same
Group Iii-Nitride Transistors with Back Barrier Structures and Buried P-Type Layers and Methods Thereof
Device and Process for Fault Detection of a Power Device
Integrated Passive Device (Ipd) Components and a Package and Processes Implementing the Same
Power Module
Patent:
954,667 →
Application:
29/663,171 →
Power Module
Patent:
903,590 →
Application:
29/663,172 →
Housing for a Power Module Assembly
Patent:
954,668 →
Application:
29/676,416 →
Power Module Having Pin Fins
Patent:
942,403 →
Application:
29/710,592 →
Power Module
Patent:
969,740 →
Application:
29/757,360 →
Power Module Having Pin Fins
Patent:
985,517 →
Application:
29/821,330 →
Related Assignments
(23)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Apr 23, 2012
From: OTSUKA, TAKUKAZU; WESTERN, BRYON; PASSMORE, BRANDON; COLE, ZACH
To: ARKANSAS POWER ELECTRONICS INTERNATIONAL, INC.; ROHM CO., LTD.
Reel/Frame 028090/0248 →
Assignment of Assignor's Interest
May 23, 2012
From: CILIO, EDGAR
To: ARKANSAS POWER ELECTRONICS INTERNATIONAL, INC.
Reel/Frame 028253/0517 →
Assignment of Assignor's Interest
Aug 14, 2012
From: MITCHELL, DAVID J.; SCHILLIG, CORA
To: SIEMENS ENERGY, INC.
Reel/Frame 028784/0685 →
Assignment of Assignor's Interest
Aug 14, 2012
From: MITCHELL, DAVID J.; SCHILLIG, CORA
To: SIEMENS ENERGY, INC.
Reel/Frame 028784/0466 →
Assignment of Assignor's Interest
Aug 15, 2012
From: MITCHELL, DAVID J.; SCHILLIG, CORA
To: SIEMENS ENERGY, INC
Reel/Frame 028791/0672 →
Assignment of Assignor's Interest
Aug 29, 2012
From: SUBRAMANIAN, RAMESH; KULKARNI, ANAND A.; MITCHELL, DAVID J.; WAITS, ROD
To: SIEMENS ENERGY, INC
Reel/Frame 028871/0101 →
Assignment of Assignor's Interest
May 14, 2014
From: REESE, BRAD ALAN; VALLE-MAYORGA, JAVIER ANTONIO; ESCORCIA-CARRANZA, IVONNE; PHAN, KHOA MINH
To: ARKANSAS POWER ELECTRONICS INTERNATIONAL, INC.
Reel/Frame 032886/0432 →
Assignment of Assignor's Interest
Jun 3, 2014
From: SIEMENS ENERGY, INC.
To: SIEMENS INDUSTRIAL TURBOMACHINERY AB
Reel/Frame 033014/0091 →
Assignment of Assignor's Interest
Jun 3, 2014
From: SIEMENS INDUSTRIAL TURBOMACHINERY AB
To: SIEMENS AKTIENGESELLSCHAFT
Reel/Frame 033013/0945 →
Corrective Assignment to Correct the Docket # from 2011P01674US Previously Recorded on Reel 033013 Frame 0945. Assignor(S) Hereby Confirms the Assignment.
Jun 20, 2014
From: SIEMENS INDUSTRIAL TURBOMACHINERY AB
To: SIEMENS AKTIENGESELLSCHAFT
Reel/Frame 033204/0829 →
Merger and Change of Name
Jul 17, 2015
From: ARKANSAS POWER ELECTRONICS INTERNATIONAL, INC.; CREE FAYETTEVILLE, INC.
To: CREE FAYETTEVILLE, INC.
Reel/Frame 036118/0978 →
Merger and Change of Name
Sep 9, 2015
From: ARKANSAS POWER ELECTRONICS INTERNATIONAL, INC.; CREE FAYETTEVILLE, INC.
To: CREE FAYETTEVILLE, INC.
Reel/Frame 036522/0649 →
Merger
Mar 10, 2016
From: ARKANSA POWER ELECTRONICS INTERNATIONAL, INC.
To: CREE FAYETTEVILLE, INC.
Reel/Frame 037949/0210 →
Assignment of Assignor's Interest
May 22, 2018
From: INFINEON TECHNOLOGIES AG
To: CREE, INC.
Reel/Frame 045870/0504 →
Merger
Aug 13, 2021
From: CREE FAYETTEVILLE, INC.
To: CREE, INC.
Reel/Frame 057291/0406 →
Security Interest
Jun 30, 2023
From: WOLFSPEED, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION
Reel/Frame 064185/0755 →
Change of Name
Aug 16, 2023
From: CREE, INC.
To: WOLFSPEED, INC.
Reel/Frame 064615/0365 →
Assignment of Assignor's Interest
Dec 29, 2023
From: WOLFSPEED, INC.
To: MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.
Reel/Frame 066236/0086 →
Notice of Grant of Security Interest in Intellectual Property
Sep 30, 2025
From: WOLFSPEED, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 072992/0113 →
Notice of Grant of Security Interest in Intellectual Property
Sep 30, 2025
From: WOLFSPEED, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 072992/0588 →
Notice of Grant of Security Interest in Intellectual Property
Sep 30, 2025
From: WOLFSPEED, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 072992/0467 →
Notice of Grant of Security Interest in Intellectual Property
Sep 30, 2025
From: WOLFSPEED, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 072992/0381 →
Release of Security Interest in Intellectual Property Collateral at Reel/Frame No. 64185/0755
Sep 30, 2025
From: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: WOLFSPEED, INC.
Reel/Frame 072989/0001 →