Integrated passive device (IPD) components and a package and processes implementing the same
A transistor package that includes a metal submount; a transistor die mounted on said metal submount; a surface mount IPD component that includes a dielectric substrate; and the dielectric substrate mounted on said metal submount. Additionally, the dielectric substrate includes one of the following: an irregular shape, a non-square shape, and a nonrectangular shape.
1. An RF transistor package, comprising,
a metal submount;
a transistor die mounted on said metal submount;
a surface mount IPD component comprising a dielectric substrate;
the dielectric substrate mounted on said metal submount; and
the dielectric substrate comprising a nonrectangular shape.
2. The RF transistor package according to claim 1 wherein the dielectric substrate comprises a plurality of linear sides and a connection surface between at least two of the plurality of linear sides.
3. The RF transistor package according to claim 2 wherein the connection surface is defined by a cut out portion of the dielectric substrate.
4. The RF transistor package according to claim 2 wherein the connection surface comprises a curve shaped surface.
5. The RF transistor package according to claim 2 wherein the connection surface comprises a concave shaped surface.
6. The RF transistor package according to claim 2 wherein the connection surface comprises a partial circle shaped surface.
7. The RF transistor package according to claim 1 wherein the transistor die comprises an LDMOS transistor die.
8. The RF transistor package according to claim 1 wherein the transistor die comprises at least one GaN based HEMT.
9. The RF transistor package according to claim 1 wherein the surface mount IPD component comprises a surface mount device mounted to a top surface of said surface mount IPD component.
10. The RF transistor package according to claim 9 further comprising at least one wire bond configured to electrically couple the surface mount device to one or more metal contacts.
11. The RF transistor package according to claim 9 wherein the dielectric substrate comprises at least one via configured to make an electrical connection between the surface mount device and the metal submount.
12. The RF transistor package according to claim 1 further comprising:
at least one surface mount device comprising a first terminal and a second terminal, said first terminal of said surface mount device mounted to a first pad of the surface mount IPD component and said second terminal mounted to a second pad of the surface mount IPD component,
wherein the surface mount device comprises a ceramic capacitor.
13. The RF transistor package according to claim 2 wherein the connection surface comprises a linear surface.
14. The RF transistor package according to claim 1 wherein the RF transistor package comprises a plurality of the transistor die.
15. The RF transistor package according to claim 14 wherein the plurality of the transistor die are configured in a Doherty configuration.
16. The RF transistor package according to claim 9 wherein the dielectric substrate comprises at least one via configured to make an electrical connection between the surface mount device and a source of the transistor die.
17. The RF transistor package according to claim 1 further comprising:
at least one surface mount device comprising a first terminal and a second terminal, said first terminal of said surface mount device mounted to a first pad of the surface mount IPD component and said second terminal mounted to a second pad of the surface mount IPD component;
at least one of the first terminal and the second terminal being configured to be isolated from the metal submount by said dielectric substrate; and
at least one wire bond bonded to the at least one of the first pad and the second pad.
18. The RF transistor package according to claim 17 wherein the at least one wire bond is configured to electrically couple the surface mount device to the transistor die.
19. The RF transistor package according to claim 17 wherein the surface mount device comprises a resistor.
20. A device, comprising:
a surface mount IPD component comprising a dielectric substrate;
at least one surface mount device mounted to said surface mount IPD component; and
the dielectric substrate comprising a nonrectangular shape,
wherein the surface mount IPD component is configured to be mounted to a metal submount of a transistor package.
21. The device according to claim 20 wherein the dielectric substrate comprises a plurality of linear sides and a connection surface between at least two of the plurality of linear sides.
22. The device according to claim 21 wherein the connection surface is defined by a cut out portion of the dielectric substrate.
23. The device according to claim 21 wherein the connection surface comprises a curve shaped surface.
24. The device according to claim 21 wherein the connection surface comprises a concave shaped surface.
25. The device according to claim 21 wherein the connection surface comprises a partial circle shaped surface.
26. The device according to claim 21 wherein the connection surface comprises a linear surface.
27. The device according to claim 20 wherein the surface mount IPD component is configured to be implemented in a transistor package that comprises a transistor die.
28. The device according to claim 20 wherein the surface mount IPD component is configured to be implemented in an RF transistor package that comprises a GaN based HEMT.
29. The device according to claim 20 wherein the surface mount IPD component is configured to be implemented in an RF transistor package that comprises an LDMOS transistor die.
30. The device according to claim 20 wherein the surface mount IPD component is configured to be implemented in an RF transistor package that comprises a plurality of transistors.
31. The device according to claim 30 wherein the plurality of transistors are configured in a Doherty configuration.
32. The device according to claim 20 wherein the surface mount IPD component comprises a plurality of surface mount devices mounted to a top surface of said surface mount IPD component.
33. The device according to claim 20 wherein the dielectric substrate comprises at least one via configured to make an electrical connection between the surface mount device and the metal submount.
34. The device according to claim 20 wherein the dielectric substrate comprises at least one via configured to make an electrical connection between the surface mount device and a source of a transistor die.
35. The device according to claim 20 wherein the surface mount device comprises a ceramic capacitor.
36. The device according to claim 20 wherein the surface mount device comprises a resistor.
37. The device according to claim 20 wherein at least one wire bond is configured to electrically couple the surface mount device to a die implemented in an RF transistor package.
38. The device according to claim 20 wherein at least one wire bond is configured to electrically couple the surface mount device to one or more metal contacts.
39. A process for implementing an RF transistor package, comprising,
providing a metal submount;
mounting a transistor die on said metal submount;
configuring a surface mount IPD component with a dielectric substrate;
configuring the dielectric substrate with a nonrectangular shape; and
mounting the dielectric substrate to said metal submount.
40. The process according to claim 39 further comprising configuring the dielectric substrate with a plurality of linear sides and a connection surface between at least two of the plurality of linear sides.
41. The process according to claim 40 further comprising configuring the connection surface by cutting out a portion of the dielectric substrate.
42. The process according to claim 40 further comprising configuring the connection surface with a curve shaped surface.
43. The process according to claim 40 further comprising configuring the connection surface with a partial circle shaped surface.
44. The process according to claim 40 further comprising configuring the connection surface with a concave shaped surface.
45. The process according to claim 40 further comprising configuring the connection surface with a linear surface.
46. The process for implementing an RF transistor package according to claim 21 further comprising:
implementing the surface mount IPD component with a plurality of surface mount devices; and
mounting the plurality of surface mount devices to a top surface of said surface mount IPD component.
47. The process for implementing an RF transistor package according to claim 46 further comprising configuring the dielectric substrate to arrange at least one via to make an electrical connection between at least one of the plurality of surface mount devices and the metal submount.
48. The process for implementing an RF transistor package according to claim 46 further comprising configuring at least one wire bond to electrically couple at least one of the plurality of surface mount devices to the transistor die.
49. The process for implementing an RF transistor package according to claim 46 further comprising configuring the dielectric substrate to arrange at least one via configured to make an electrical connection between at least one of the plurality of surface mount devices and a source of the transistor die.
50. The process for implementing an RF transistor package according to claim 46 further comprising configuring a at least one wire bond to electrically couple at least one of the plurality of surface mount devices to one or more metal contacts.
51. The process for implementing an RF transistor package according to claim 46 wherein at least one of the plurality of surface mount devices comprises a ceramic capacitor.
52. The process for implementing an RF transistor package according to claim 46 wherein at least one of the plurality of surface mount devices comprises a resistor.
53. The process for implementing an RF transistor package according to claim 39 wherein the transistor die comprises an LDMOS transistor die.
54. The process for implementing an RF transistor package according to claim 39 wherein the transistor die comprises a GaN based HEMT.
55. The process for implementing an RF transistor package according to claim 39 further comprising implementing a plurality the transistor die.
56. The process for implementing an RF transistor package according to claim 55 further comprising implementing the plurality of the transistor die in a Doherty configuration.