RF amplifier package with biasing strip
Embodiments of an RF amplifier package include a body section comprising an upper surface having first and second opposing edge sides, and a die pad vertically recessed beneath the upper surface and comprising first and second opposing sides and a third side intersecting with the first and second sides. Embodiments also include first and second leads disposed on the upper surface, the second lead extending from adjacent to the second side to the second edge side; and a biasing strip connected to the second lead and disposed on the upper surface adjacent to the third side. Other embodiments include packaged RF amplifiers comprising an RF amplifier package, and an RF transistor mounted on the die pad and comprising: a control terminal electrically coupled to the first lead, a reference potential terminal directly facing and electrically connected to the die pad, and an output terminal electrically connected to the second lead.
1. An RF amplifier package, comprising:
a body section comprising:
an electrically insulating upper surface having first and second opposing edge sides; and
an electrically conductive die pad vertically recessed beneath the upper surface and comprising first and second opposing sides and a third side that intersects the first and second sides;
first and second electrically conductive leads disposed on the upper surface, wherein the second lead extends from adjacent to the second side to the second edge side; and
a first electrically conductive biasing strip connected to the second lead and disposed on the upper surface adjacent to the third side of the die pad.
2. The RF amplifier package of claim 1 , wherein the first biasing strip is further disposed on the upper surface adjacent to an intersection between the second and third sides of the die pad.
3. The RF amplifier package of claim 2 , wherein:
the first biasing strip comprises a first section that is connected to the second lead and extends along a portion of the second side, and a second elongated section that extends along the third side; and
the first section and the second elongated section form an angled intersection adjacent to the intersection between the second and third sides.
4. The RF amplifier package of claim 3 , wherein:
the second and third sides of the die pad are substantially linear;
the intersection of the second and third sides is substantially perpendicular; and
the angled intersection between the first section and the second elongated section is substantially perpendicular.
5. The RF amplifier package of claim 3 , wherein the second elongated section extends completely along the third side and further to the first edge side.
6. The RF amplifier package of claim 1 , wherein:
the die pad further comprises a fourth side that opposes the third side and intersects with the first and second sides; and
the RF amplifier package further comprises a second electrically conductive biasing strip connected to the second lead and disposed on the upper surface adjacent to the fourth side.
7. A packaged RF amplifier, comprising:
the RF amplifier package of claim 1 ; and
an RF transistor mounted on the die pad, the RF transistor comprising:
a control terminal that is electrically coupled to the first lead, a reference potential terminal that directly faces and is electrically connected to the die pad, and an output terminal that is electrically connected to the second lead.
8. The packaged RF amplifier of claim 7 , further comprising a capacitor mounted on the die pad, the capacitor comprising a first terminal that directly faces and is electrically connected to the die pad and a second terminal that is electrically connected to the first biasing strip.
9. The packaged RF amplifier of claim 8 , further comprising:
a first set of electrically conductive bond wires, wherein each bond wire of the first set extends directly from the output terminal of the RF transistor to the second lead; and
a second set of electrically conductive bond wires, wherein each of the bond wires in the second set extends directly from the second terminal of the capacitor to the first biasing strip.
10. The packaged RF amplifier of claim 7 , further comprising one or more passive electrical components disposed on the upper surface, wherein:
the first biasing strip comprises a first section that is connected to the second lead and extends along a portion of the second side, and a second elongated section that extends along the third side; and
the one or more passive electrical components are electrically connected to at least one of the first section and the second elongated section.
11. An RF amplifier package, comprising:
a body section comprising:
an electrically insulating upper surface comprising first and second opposing edge sides and a window frame disposed between the first and second edge sides; and
an electrically conductive die pad vertically recessed beneath the upper surface such that the die pad is exposed by the window frame;
a continuous, electrically conductive structure disposed on the upper surface and comprising:
a lead portion disposed along a first portion of the window frame adjacent to the die pad; and
a biasing portion disposed along a second portion of the window frame adjacent to the die pad.
12. The RF amplifier package of claim 11 , wherein the biasing portion extends from adjacent to the die pad towards the first edge side.
13. The RF amplifier package of claim 11 , wherein the lead portion extends from adjacent to the die pad towards the second edge side.
14. The RF amplifier package of claim 11 , wherein:
the die pad is rectangular;
the second portion of the window frame comprises third and fourth opposing sides; and
the biasing portion comprises a second elongated section disposed along the third side and a fourth elongated section disposed along the fourth side.
15. The RF amplifier package of claim 14 , wherein:
the window frame also includes a second side comprising first and second end sections that respectively intersect the third and fourth opposing sides; and
the second portion of the window frame further comprises the first and second end sections and the respective intersections of the first and second end sections with the third and fourth opposing sides.
16. A packaged RF amplifier, comprising:
the RF amplifier package of claim 11 , wherein the lead portion comprises a first lead and a second lead; and
an RF transistor mounted on the die pad, the RF transistor comprising:
a control terminal that is electrically coupled to the first lead, a reference potential terminal that directly faces and is electrically connected to the die pad, and an output terminal that is electrically connected to the second lead.
17. The packaged RF amplifier of claim 16 , wherein the biasing portion extends from adjacent to the die pad towards the first edge side, and the lead portion extends from adjacent to the die pad towards the second edge side.
18. The packaged RF amplifier of claim 16 , further comprising a capacitor mounted on the die pad, the capacitor comprising a first terminal that directly faces and is electrically connected to the die pad and a second terminal that is electrically connected to the biasing portion.
19. The packaged RF amplifier of claim 18 , further comprising:
a first set of electrically conductive bond wires, wherein each bond wire of the first set extends directly from the output terminal of the RF transistor to an output lead of the RF amplifier package; and
a second set of electrically conductive bond wires, wherein each of the bond wires in the second set extends directly from the second terminal of the capacitor to the biasing portion.
20. The RF amplifier package of claim 11 , wherein:
the second portion of the window frame comprises third and fourth opposing sides; and
the biasing portion comprises a second elongated section disposed along the third side and a fourth elongated section disposed along the fourth side.