Radio frequency power circuits utilizing coaxial resonators for video bandwidth improvements and circuit size reduction and a process of implementing the same
A packaged RF power amplifier (RFPA) configured to increase video bandwidth is disclosed as well is a process for implementing a RF power device to increase video bandwidth. The RF power device including at least one transistor; an output matching circuit coupled to an output lead and to the at least one transistor; at least one bias feed circuit coupled to the at least one transistor; and at least one coaxial resonator coupled between the at least one transistor and the at least one bias feed circuit.
1. A packaged RF power amplifier (RFPA) configured to increase video bandwidth comprising:
at least one transistor;
an input lead coupled to the at least one transistor;
a ground terminal coupled to the transistor;
an output lead coupled to the at least one transistor;
an output matching circuit coupled to the output lead and to the at least one transistor;
at least one bias feed circuit coupled to the at least one transistor; and
at least one coaxial resonator coupled between the at least one transistor and the at least one bias feed circuit,
wherein the at least one bias feed circuit is configured to apply a DC bias voltage to the at least one transistor; and
wherein the at least one coaxial resonator is configured to present an RF open function and/or an RF filtering function.
2. The packaged RF power amplifier (RFPA) according to claim 1 wherein:
the at least one coaxial resonator is arranged with at least one of the following:
the at least one bias feed circuit and the output matching circuit; and
the at least one bias feed circuit is connected to the output matching circuit.
3. The packaged RF power amplifier (RFPA) according to claim 1 wherein:
the at least one transistor comprises a GaN based transistor; and
the at least one bias feed circuit is connected to a drain of the at least one transistor through the at least one coaxial resonator.
4. The packaged RF power amplifier (RFPA) according to claim 1 wherein:
the at least one transistor comprises a LDMOS based transistor.
5. The packaged RF power amplifier (RFPA) according to claim 1 wherein the at least one coaxial resonator is configured to have a length and/or an area that is 10%-60% less than a microstrip drain bias feed component.
6. The packaged RF power amplifier (RFPA) according to claim 1 wherein the at least one coaxial resonator is configured to have an effective baseband equivalent series resistance (ESR) that is less than a microstrip drain bias feed component.
7. The packaged RF power amplifier (RFPA) according to claim 1 wherein the at least one coaxial resonator is configured to have an effective baseband equivalent series resistance (ESR) that is 10%-60% less than a microstrip drain bias feed component.
8. The packaged RF power amplifier (RFPA) according to claim 1 wherein the at least one coaxial resonator is configured to increase a video bandwidth of the packaged RF power amplifier (RFPA) in comparison to a microstrip drain bias feed component.
9. The packaged RF power amplifier (RFPA) according to claim 1 wherein:
the at least one bias feed circuit is connected to a drain of the at least one transistor through the at least one coaxial resonator.
10. The packaged RF power amplifier (RFPA) according to claim 1 further comprising:
a carrier amplifier; and
a peaking amplifier,
implementing the at least one coaxial resonator as at least two coaxial resonators;
coupling a first one of the at least two coaxial resonators to the carrier amplifier; and
coupling a second one of the at least two coaxial resonators to the peaking amplifier.
11. The packaged RF power amplifier (RFPA) according to claim 1 further comprising:
an input matching network,
wherein the at least one coaxial resonator is configured to apply a DC bias voltage to the input matching network.
12. A process of implementing a packaged RF power amplifier (RFPA) to increase video bandwidth comprising:
providing at least one transistor;
coupling an input lead to the at least one transistor;
coupling a ground terminal to the transistor;
coupling an output lead to the at least one transistor;
coupling an output matching circuit to the output lead and to the at least one transistor;
coupling at least one bias feed circuit to the at least one transistor; and
coupling at least one coaxial resonator between the at least one transistor and the at least one bias feed circuit,
wherein the at least one bias feed circuit is configured to apply a DC bias voltage to the at least one transistor; and
wherein the at least one coaxial resonator is configured to present an RF open function and/or an RF filtering function.
13. The process of implementing a packaged RF power amplifier (RFPA) according to claim 12 further comprising arranging the at least one coaxial resonator with at least one of the following: the at least one bias feed circuit and the output matching circuit.
14. The process of implementing a packaged RF power amplifier (RFPA) according to claim 12 wherein:
the at least one transistor comprises a GaN based transistor; and
the at least one bias feed circuit is connected to the output matching circuit.
15. The process of implementing a packaged RF power amplifier (RFPA) according to claim 12
wherein the at least one transistor comprises a LDMOS based transistor.
16. The process of implementing a packaged RF power amplifier (RFPA) according to claim 12 wherein the at least one coaxial resonator is configured to have a length and/or an area that is 10%-60% less than a microstrip drain bias feed component.
17. The process of implementing a packaged RF power amplifier (RFPA) according to claim 12 wherein the at least one coaxial resonator is configured to have an effective baseband equivalent series resistance (ESR) that is 10%-60% less than a microstrip drain bias feed component.
18. The packaged RF power amplifier (RFPA) according to claim 12 wherein the at least one coaxial resonator is configured to increase a video bandwidth of the packaged RF power amplifier (RFPA) in comparison to a microstrip drain bias feed component.
19. The packaged RF power amplifier (RFPA) according to claim 12 wherein:
the at least one bias feed circuit is connected to a drain of the at least one transistor through the at least one coaxial resonator.
20. The packaged RF power amplifier (RFPA) according to claim 12 further comprising:
a carrier amplifier; and
a peaking amplifier,
implementing the at least one coaxial resonator as at least two coaxial resonators;
coupling a first one of the at least two coaxial resonators to the carrier amplifier; and
coupling a second one of the at least two coaxial resonators to the peaking amplifier.