Circuits and group III-nitride transistors with buried p-layers and controlled gate voltages and methods thereof
An apparatus for reducing lag includes a substrate; a group III-Nitride barrier layer; a source electrically coupled to the group III-Nitride barrier layer; a gate on the group III-Nitride barrier layer; a drain electrically coupled to the group III-Nitride barrier layer; a p-region being arranged at or below the group III-Nitride barrier layer; and a gate control circuit configured to control a gate voltage of the gate. Additionally, at least a portion of the p-region is arranged vertically below at least one of the following: the source, the gate, and an area between the gate and the drain.
1. An apparatus, comprising:
a substrate;
a group III-Nitride barrier layer;
a source electrically coupled to the group III-Nitride barrier layer;
a gate on the group III-Nitride barrier layer;
a drain electrically coupled to the group III-Nitride barrier layer;
an input lead connected to the gate and the input lead configured to receive an input signal;
a p-region being arranged at or below the group III-Nitride barrier layer; and
a gate control circuit configured to control a gate voltage of the gate,
wherein a portion of the p-region is arranged vertically below at least one of the following: the source, the gate, and an area between the gate and the drain; and
wherein the gate control circuit comprises a voltage source tied to ground.
2. The apparatus of claim 1
wherein the gate control circuit is configured to reduce a peak negative gate voltage in comparison to operation of the apparatus without the gate control circuit;
wherein the gate control circuit comprises the voltage source tied to ground; and
wherein the apparatus is configured as a radiofrequency package.
3. The apparatus of claim 1
wherein the gate control circuit is configured to reduce a peak negative gate voltage in comparison to operation of the apparatus without the gate control circuit;
wherein the p-region together with the gate control circuit are configured to at least one of the following: reduce drain lag trapping and reduce gate lag trapping; and
wherein the gate control circuit is tied to ground.
4. The apparatus of claim 1
wherein the gate control circuit is configured to limit a peak negative gate voltage at the gate in comparison to operation of the apparatus without the gate control circuit.
5. An apparatus, comprising:
a substrate;
a group III-Nitride barrier layer;
a source electrically coupled to the group III-Nitride barrier layer;
a gate on the group III-Nitride barrier layer;
a drain electrically coupled to the group III-Nitride barrier layer;
an input lead connected to the gate and the input lead configured to receive an input signal;
a p-region being arranged at or below the group III-Nitride barrier layer; and
a gate control circuit configured to control a gate voltage of the gate,
wherein a portion of the p-region is arranged vertically below at least one of the following: the source, the gate, and an area between the gate and the drain;
wherein the gate control circuit is configured to prevent a peak negative gate voltage at the gate from dropping below −8V in greater negative voltage values; and
wherein the apparatus is configured as an amplifier.
6. The apparatus of claim 1
wherein the gate control circuit is configured to reduce a peak negative gate voltage in comparison to operation of the apparatus without the gate control circuit;
wherein the gate control circuit comprises a diode based circuit configured to compensate for a voltage dependent input capacitance to at least one of the following: reduce drain lag trapping and reduce gate lag trapping; and
wherein the gate control circuit comprises the voltage source tied to ground.
7. The apparatus of claim 1 wherein the gate control circuit comprises a second harmonic short circuit.
8. The apparatus of claim 1 wherein the gate control circuit comprises a second harmonic short circuit tuned and configured to limit a peak negative gate voltage in comparison to operation of the apparatus without the gate control circuit.
9. The apparatus of claim 1
wherein the gate control circuit is configured to reduce a peak negative gate voltage in comparison to operation of the apparatus without the gate control circuit thereby reducing and/or limiting gate lag trapping; and
wherein the gate control circuit is tied to ground.
10. The apparatus of claim 1
wherein the p-region together with the gate control circuit are configured to at least one of the following: reduce drain lag and reduce gate lag;
wherein the gate control circuit comprises the voltage source; and
wherein the apparatus is configured as a radiofrequency package.
11. The apparatus of claim 1
wherein the gate control circuit is configured to shape a waveform of a gate voltage at the gate to inhibit the gate voltage from reaching greater negative voltage values; and
wherein the gate control circuit comprises a diode based circuit configured to compensate for a voltage dependent input capacitance.
12. The apparatus of claim 1
wherein the gate control circuit is configured to limit a peak negative gate in comparison to operation of the apparatus without the gate control circuit; and
wherein the apparatus is configured as an amplifier.
13. An apparatus, comprising:
a substrate;
a group III-Nitride barrier layer;
a source electrically coupled to the group III-Nitride barrier layer;
a gate on the group III-Nitride barrier layer;
a drain electrically coupled to the group III-Nitride barrier layer;
an input lead connected to the gate and the input lead configured to receive an input signal;
a p-region being arranged at or below the group III-Nitride barrier layer; and
a gate control circuit configured to control a gate voltage of the gate,
wherein a portion of the p-region is arranged vertically below at least one of the following: the source, the gate, and an area between the gate and the drain;
wherein the gate control circuit is configured with an apparent capacitance as a function of a capacitance of a transistor; and
wherein the apparatus is configured as an amplifier.
14. The apparatus of claim 1 , further comprising:
a group III-Nitride buffer layer on the substrate,
wherein the group III-Nitride barrier layer is arranged on the group III-Nitride buffer layer, the group III-Nitride barrier layer comprising a higher bandgap than a bandgap of the group III-Nitride buffer layer,
wherein the gate control circuit comprises the voltage source tied to ground.
15. The apparatus of claim 1 , further comprising:
a group III-Nitride back barrier layer on the substrate; and
a group III-Nitride channel layer on the group III-Nitride back barrier layer, wherein the group III-Nitride barrier layer is on the group III-Nitride channel layer, the group III-Nitride barrier layer comprising a higher bandgap than a bandgap of the group III-Nitride channel layer.
16. The apparatus of claim 1 , wherein:
a part of a source side of the substrate is free of the p-region;
a part of a drain side of the substrate is free of the p-region;
the source side extends from the gate toward and past the source;
the drain side extends from the gate toward and past the drain; and
the gate control circuit comprises the voltage source tied to ground.
17. An apparatus, comprising:
a substrate;
a group III-Nitride barrier layer;
a source electrically coupled to the group III-Nitride barrier layer;
a gate on the group III-Nitride barrier layer;
a drain electrically coupled to the group III-Nitride barrier layer;
an input lead connected to the gate and the input lead configured to receive an input signal;
a p-region being arranged at or below the group III-Nitride barrier layer;
a gate control circuit configured to control a gate voltage of the gate; and
a field plate,
wherein a portion of the p-region is arranged vertically below at least one of the following: the source, the gate, and an area between the gate and the drain;
wherein the p-region is implanted; and
wherein the apparatus is configured as an amplifier.
18. An apparatus, comprising:
a substrate;
a group III-Nitride barrier layer;
a source electrically coupled to the group III-Nitride barrier layer;
a gate on the group III-Nitride barrier layer;
a drain electrically coupled to the group III-Nitride barrier layer;
an input lead connected to the gate and the input lead configured to receive an input signal;
a p-region being arranged at or below the group III-Nitride barrier layer;
a gate control circuit configured to control a gate voltage of the gate; and
a field plate,
wherein a portion of the p-region is arranged vertically below at least one of the following: the source, the gate, and an area between the gate and the drain;
wherein the field plate is electrically coupled to the source; and
wherein the apparatus is configured as an amplifier.
19. The apparatus of claim 1 wherein:
a distance LGPS defines a length of a portion of the p-region from a lower corner of the gate on a source side toward the source;
a distance LGPD defines a length of a portion of the p-region from a lower corner of the gate on a drain side toward the drain; and
the distance LGPS greater than the distance LGPD,
wherein the source side extends from the gate toward and past the source; and
wherein the drain side extends from the gate toward and past the drain.
20. The apparatus of claim 1 wherein the gate control circuit comprises a second harmonic short circuit tuned and configured to reduce and/or limit peak gate voltages.
21. The apparatus of claim 1 wherein the gate control circuit comprises a resonant circuit.
22. The apparatus of claim 1 wherein the gate control circuit comprises a second harmonic short circuit tied to ground.
23. The apparatus of claim 1
wherein the gate control circuit comprises a diode-based circuit; and
wherein the apparatus is configured as a radiofrequency package.
24. The apparatus of claim 1
wherein the gate control circuit comprises a second harmonic short circuit tied to ground; and
wherein the gate control circuit comprises a diode-based circuit comprising a diode configured to counteract non-linear input capacitance.
25. The apparatus of claim 1 wherein the gate control circuit comprises a second harmonic short circuit tied to ground;
wherein the gate control circuit comprises a diode-based circuit comprising a diode configured to counteract non-linear input capacitance; and
wherein the gate control circuit comprises the voltage source tied to ground.
26. The apparatus of claim 1 comprising a transistor package and the apparatus further comprising:
an input matching network connected between the input lead and the gate; and
the gate control circuit is connected between the input matching network and the gate,
wherein the gate control circuit comprises the voltage source tied to ground.
27. The apparatus of claim 1 further comprising an input matching network, wherein the gate control circuit is implemented as part of the input matching network,
wherein the gate control circuit is tied to ground.
28. The apparatus of claim 1 comprising a transistor package and the apparatus further comprising:
an input matching network connected between the input lead and the gate;
the gate control circuit is connected between the input matching network and the gate; and
an output matching network connected between an output lead and the source,
wherein the gate control circuit comprises the voltage source tied to ground.
29. The apparatus of claim 28 ,
wherein the output matching network comprises one or more inductances, impedances, and/or capacitors connected between an output lead and the source; and
wherein the apparatus is configured as an amplifier.
30. The apparatus of claim 28 further comprising an output matching network, wherein the output matching network comprises one or more inductances, impedances, and/or capacitors connected between an output lead and the source,
wherein the apparatus is configured as an amplifier.
31. The apparatus of claim 28
wherein the input matching network comprises one or more inductances, impedances, and/or capacitors connected between the input lead and the gate; and
wherein the apparatus is configured as an amplifier.
32. The apparatus of claim 28 wherein the gate control circuit comprises a second harmonic short circuit tuned and configured to reduce and/or limit peak gate voltages.
33. The apparatus of claim 28 wherein the gate control circuit comprises a resonant circuit.
34. The apparatus of claim 28 wherein the gate control circuit comprises a second harmonic short circuit tied to ground.
35. The apparatus of claim 28
wherein the gate control circuit comprises a diode-based circuit; and
wherein the apparatus is configured as an amplifier.
36. The apparatus of claim 28
wherein the gate control circuit comprises the voltage source tied to ground; and
wherein the apparatus is configured as an amplifier.