Tuned semiconductor amplifier
Methods and structures for improving the performance of integrated semiconductor transistors operating at high frequency and/or high power are described. Two capacitors may be connected to an input of a semiconductor transistor and tuned to suppress second-harmonic generation and to transform and match the input impedance of the device. A two-stage tuning procedure is described. The transistor may comprise gallium nitride and may be configured as a power transistor capable of handling up to 1000 W of power. A tuned transistor may operate at frequencies up to 6 GHz with a peak drain efficiency greater than 60%.
1. A packaged power transistor comprising a first capacitive shunt comprising a first capacitor connected between a gate contact of a semiconductor transistor and a reference potential, wherein a capacitance of the first capacitor is such that a resonance peak of an S 11 scattering-parameter curve that is determined at a node that is common to an electrode of the first capacitor and the gate of the semiconductor transistor occurs at a frequency that is approximately twice a target operating frequency for the transistor.
2. The packaged power transistor of claim 1 , further comprising a second capacitive shunt connected in parallel with the first capacitive shunt such that an input impedance at an input to the second capacitive shunt is between 0 ohms and 100 ohms.
3. The packaged power transistor of claim 2 , wherein a drain efficiency of the power transistor at the target frequency is between approximately 50% and approximately 75%.
4. The packaged power transistor of claim 3 , wherein a power rating for the semiconductor transistor is between approximately 1 W/mm and approximately 15 W/mm.
5. The packaged power transistor of claim 3 , wherein the target operating frequency is between approximately 1 GHz and approximately 6 GHz.
6. The packaged power transistor of claim 1 , wherein the semiconductor transistor comprises one or more depletion-mode transistors disposed in a linear array on a semiconductor die.
7. The packaged power transistor of claim 6 , wherein the one or more depletion-mode transistors comprise gallium-nitride active regions.
8. The packaged power transistor of claim 1 , further comprising an output matching network connected between one or more drain pads of the semiconductor transistor and a drain terminal of the packaged power transistor.
9. The packaged power transistor of claim 8 , wherein the output matching network comprises a shunt capacitor and bond wires connecting an electrode of the shunt capacitor to the one or more drain pads.
10. The packaged power transistor of claim 1 , wherein a capacitance of the first capacitor is between approximately 1 pF/mm and approximately 10 pF/mm.
11. The packaged power transistor of claim 1 , wherein a capacitance of the second capacitor is between approximately 1 pF/mm and approximately 20 pF/mm.
12. The packaged power transistor of claim 1 , further comprising a metal-ceramic enclosure enclosing the semiconductor transistor and first capacitive shunt.
13. The packaged power transistor of claim 1 , further comprising a plastic over-mold package enclosing the semiconductor transistor and first capacitive shunt.
14. The packaged power transistor of claim 1 , further comprising a ceramic air-cavity package enclosing the semiconductor transistor and first capacitive shunt.
15. The packaged power transistor of claim 1 , further comprising a plastic air-cavity package enclosing the semiconductor transistor and first capacitive shunt.
16. A method for making a transistor comprising two capacitive shunts connected to a gate of the transistor, the method comprising connecting a first capacitor for a first capacitive shunt of the two capacitive shunts such that a capacitance value of the first capacitor gives a resonance peak of an S 11 scattering-parameter curve at a frequency that is approximately twice a target operating frequency for the transistor, and wherein the S 11 scattering-parameter curve is determined at a node that is common to an electrode of the first capacitor and the gate of the transistor.
17. The method of claim 16 , further comprising connecting a second capacitive shunt of the two capacitive shunts in parallel with the first capacitive shunt, such that an input impedance at an input to the second capacitive shunt is between 0 ohms and 100 ohms.
18. The method of claim 16 , wherein the transistor comprises gallium nitride in an active region of the transistor and the target operating frequency is between approximately 1 GHz and approximately 6 GHz.
19. The method of claim 16 , wherein the transistor comprises one or more depletion-mode transistors disposed in a linear array on a semiconductor die.
20. The method of claim 16 , wherein a capacitance per unit length of the first capacitor is between approximately 1 pF/mm and approximately 10 pF/mm.
21. The method of claim 16 , wherein a capacitance per unit length of the second capacitor is between approximately 1 pF/mm and approximately 20 pF/mm.
22. The method of claim 16 , further comprising connecting the first capacitor to gate pads of the transistor with a plurality of bond wires.
23. The method of claim 16 , further comprising connecting the second capacitor to a package gate lead with a plurality of bond wires.