Compound semiconductor high frequency switch device
View Patent ↗A high frequency switch device includes an epitaxy substrate that is formed by sequentially stacking an AlGaAs/GaAs superlattic buffer layer, a first Si planar doping layer, an undoped first AlGaAs spacer, an undoped InGaAs layer, an undoped second AlGaAs spacer, a second Si planar doping layer having a doping density greater than that of the first Si planar doping layer, and an undoped GaAs/AlGaAs capping layer on a GaAs semi-insulated substrate. The undoped GaAs/AlGaAs capping layer is formed with a source electrode and a drain electrode that form an ohmic contact with the undoped GaAs/AlGaAs capping layer thereon, and a gate electrode formed between the source electrode and the drain electrode, thereby forming a Schottky contact with the undoped GaAs/AlGaAs capping layer.
1. A high frequency switch device comprising:
an epitaxy substrate formed by sequentially stacking an AlGaAs/GaAs superlattic buffer layer, a first Si planar doping layer, an undoped first AlGaAs spacer, an undoped InGaAs layer, an undoped second AlGaAs spacer, a second Si planar doping layer having a doping density greater than that of the first Si planar doping layer, and an undoped GaAs/AlGaAs capping layer on a GaAs semi-insulated substrate;
a source electrode and a drain electrode formed on the undoped GaAs/AlGaAs capping layer, thereby forming an ohmic contact with the undoped GaAs/AlGaAs capping layer; and
a gate electrode formed between the source electrode and the drain electrode, thereby forming a Schottky contact with the undoped GaAs/AlGaAs capping layer.
2. The high frequency switch device as claimed in claim 1 , wherein a doping density in the second Si planar doping layer is about 4 times of that in the first Si planar doping layer.
3. The high frequency switch device as claimed in claim 1 , wherein a doping density of the second Si planar doping layer is 2×10 12 cm −2 ~8×10 12 cm −2 , and a doping density of the first Si planar doping layer is 0.5×10 12 cm −2 ~2.0×10 12 cm −2.
4. The high frequency switch device as claimed in claim 1 , wherein the second Si planar doping layer has a doping density greater than the first Si planar doping layer by 4 times or greater.
5. The high frequency switch device as claimed in claim 1 , wherein the second AlGaAs spacer is thicker than the first AlGaAs spacer by twice or greater.
6. The high frequency switch device as claimed in claim 1 , wherein the gate electrode is a T-type gate electrode.
7. The high frequency switch device as claimed in claim 1 , wherein a distance between the gate electrode and the source electrode equals to a distance between the gate electrode and the drain electrode.
8. The high frequency switch device as claimed in claim 1 , wherein the AlGaAs/GaAs superlattice buffer layer is formed by repeating a AlGaAs layer of 20~50 Å and a GaAs layer of 20~50 Å for 20~50 periods; a thickness of the first AlGaAs spacer is 1~5 nm, that of the undoped InGaAs layer is 10–20 nm, and that of the second AlGaAs spacer is 2~10 nm; and the undoped GaAs/AlGaAs capping layer is formed by stacking a GaAs layer of 20~50 nm and an AlGaAs layer of 20~50 nm.
9. The high frequency switch device as claimed in claim 1 , wherein a composite ratio of Al is smaller than that of Ga in the AlGaAs layer from the AlGaAs/GaAs superlattice buffer layer, the first AlGaAs spacer, the second AlGaAs spacer, and the undoped GaAs/AlGaAs capping layer.
10. The high frequency switch device as claimed in claim 9 , wherein the composite ratio of Al is smaller than 0.3 mol ratio.
11. The high frequency switch device as claimed in claim 1 , wherein the composite ratio of In in the undoped InGaAs layer is smaller than that of Ga.
12. The high frequency switch device as claimed in claim 1 , wherein the composite ratio of In is smaller than 0.25 mol ratio.
13. A high frequency switch device comprising:
an epitaxy substrate formed by sequentially stacking an AlGaAs/GaAs superlattic buffer layer, a first Si planar doping layer, an undoped first AlGaAs spacer, an undoped InGaAs layer, an undoped second AlGaAs spacer thicker than the first AlGaAs spacer by twice or greater, a second Si planar doping layer having a doping density greater than that of the first Si planar doping layer by 4 times or greater, and an undoped GaAs/AlGaAs capping layer on a GaAs semi-insulated substrate;
a source electrode and a drain electrode formed on the undoped GaAs/AlGaAs capping layer, thereby forming an ohmic contact with the undoped GaAs/AlGaAs capping layer; and
a gate electrode formed between the source electrode and the drain electrode, thereby forming a Schottky contact with the undoped GaAs/AlGaAs capping layer.