Integrated passive device (IPD) components and a package and processes implementing the same
An RF transistor package includes a metal submount; a transistor die mounted to the metal submount; and a surface mount IPD component mounted to the metal submount. The surface mount IPD component includes a dielectric substrate that includes a top surface and a bottom surface and at least a first pad and a second pad arranged on a top surface of the surface mount IPD component; at least one surface mount device includes a first terminal and a second terminal, the first terminal of the surface mount device mounted to the first pad and the second terminal mounted to the second pad; at least one of the first terminal and the second terminal being configured to be isolated from the metal submount by the dielectric substrate; and at least one wire bond bonded to the at least one of the first pad and the second pad.
1. An RF transistor package, comprising:
a metal submount;
a transistor die mounted to said metal submount;
a surface mount IPD component mounted to said metal submount, said surface mount IPD component comprising a dielectric substrate comprising a top surface and a bottom surface and at least a first pad and a second pad arranged on a top surface of said surface mount IPD component;
at least one surface mount device comprising a first terminal and a second terminal, said first terminal of said surface mount device mounted to said first pad and said second terminal mounted to said second pad;
at least one of the first terminal and the second terminal being configured to be isolated from the metal submount by said dielectric substrate; and
at least one wire bond bonded to at least one of the first pad and the second pad.
2. The RF transistor package according to claim 1 wherein the surface mount IPD component comprises an Alumina substrate.
3. The RF transistor package according to claim 1 wherein the surface mount IPD component comprises a dielectric substrate.
4. The RF transistor package according to claim 1 wherein the surface mount IPD component comprises a multilayer dielectric substrate.
5. The RF transistor package according to claim 1 wherein the surface mount IPD component comprises a metallic surface configured to implement a circuit structure that comprises one or multiple of the following: capacitor, an inductor, and a resistor.
6. The RF transistor package according to claim 1 wherein the transistor die comprises one or multiple LDMOS transistor die.
7. The RF transistor package according to claim 1 wherein the transistor die comprises one or multiple GaN based HEMTs.
8. The RF transistor package according to claim 1 wherein the RF transistor package comprises a plurality of transistors.
9. The RF transistor package according to claim 8 wherein the plurality of transistors are configured in a Doherty configuration.
10. The RF transistor package according to claim 1 wherein the surface mount IPD component comprises a plurality of surface mount devices mounted to the top surface of said surface mount IPD component.
11. The RF transistor package according to claim 1 wherein the dielectric substrate comprises at least one of the following: a via configured to make an electrical connection between the surface mount device and the metal submount, edge plating configured to make an electrical connection between the surface mount device and the metal submount, wire bonding configured to make an electrical connection between the surface mount device and the metal submount, a clip configured to make an electrical connection between the surface mount device and the metal submount.
12. An RF transistor package, comprising,
a metal submount;
a transistor die mounted to said metal submount;
a surface mount IPD component mounted to said metal submount, said surface mount IPD component comprising a dielectric substrate comprising a top surface and a bottom surface and at least a first pad and a second pad arranged on a top surface of said surface mount IPD component;
at least one surface mount device comprising a first terminal and a second terminal, said first terminal of said surface mount device mounted to said first pad and said second terminal mounted to said second pad;
at least one of the first terminal and the second terminal being configured to be isolated from the metal submount by said dielectric substrate; and
at least one wire bond bonded to at least one of the first pad and the second pad,
wherein the surface mount IPD component comprises a substrate comprising at least one of the following: Alumina, Aluminum Nitride (AlN), and Beryllium oxide (BeO).
13. A device, comprising:
a surface mount IPD component configured to be mounted to a metal submount of a transistor package, said surface mount IPD component comprising a dielectric substrate comprising a top surface and a bottom surface and at least a first pad and a second pad arranged on a top surface of said surface mount IPD component;
at least one surface mount device comprising a first terminal and a second terminal, said first terminal of said surface mount device mounted to said first pad and said second terminal mounted to said second pad; and
at least one of the first terminal and the second terminal being configured to be isolated from the metal submount by said dielectric substrate,
wherein at least one of the first pad and the second pad are configured as wire bond pads.
14. The device according to claim 13 wherein the surface mount IPD component comprises a substrate comprising at least one of the following: Alumina, Aluminum Nitride (AlN), and Beryllium oxide (BeO).
15. The device according to claim 13 wherein the surface mount IPD component comprises an Alumina substrate.
16. The device according to claim 13 wherein the surface mount IPD component comprises a substrate.
17. The device according to claim 13 wherein the surface mount IPD component comprises a multilayer substrate.
18. The device according to claim 13 wherein the surface mount IPD component comprises a metallic surface configured to implement a circuit structure that comprises one of the following: capacitor, an inductor, and a resistor.
19. The device according to claim 13 wherein the surface mount IPD component is configured to be implemented in an RF transistor package that comprises an LDMOS transistor die.
20. The device according to claim 13 wherein the surface mount IPD component is configured to be implemented in an RF transistor package that comprises a GaN based HEMT.
21. The device according to claim 13 wherein the surface mount IPD component is configured to be implemented in an RF transistor package that comprises a plurality of transistors.
22. The device according to claim 13 wherein the surface mount IPD component comprises a plurality of surface mount devices mounted to the top surface of said surface mount IPD component.
23. The device according to claim 13 wherein the dielectric substrate comprises at least one of the following: a via configured to make an electrical connection between the surface mount device and the metal submount, edge plating configured to make an electrical connection between the surface mount device and the metal submount, wire bonding configured to make an electrical connection between the surface mount device and the metal submount, a clip configured to make an electrical connection between the surface mount device and the metal submount.