Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same
An apparatus includes a substrate. The apparatus further includes a group III-nitride buffer layer on the substrate; a group III-nitride barrier layer on the group III-nitride buffer layer, the group III-nitride barrier layer including a higher bandgap than a bandgap of the group III-nitride buffer layer. The apparatus further includes a source electrically coupled to the group III-nitride barrier layer; a gate electrically coupled to the group III-nitride barrier layer; a drain electrically coupled to the group III-nitride barrier layer; and a p-region being at least one of the following: in the substrate or on the substrate below said group III-nitride barrier layer.
1. An apparatus, comprising:
a substrate;
a group III-Nitride buffer layer on the substrate;
a group III-Nitride barrier layer on the group III-Nitride buffer layer, the group III-Nitride barrier layer comprising a higher bandgap than a bandgap of the group III-Nitride buffer layer;
a source electrically coupled to the group III-Nitride barrier layer;
a gate electrically coupled to the group III-Nitride barrier layer;
a drain electrically coupled to the group III-Nitride barrier layer; and
a p-region being at least one of the following: in the substrate or on the substrate below said group III-Nitride barrier layer,
wherein the p-region is buried below said group III-Nitride barrier layer and the p-region is configured without a p-type material contact and without a connection.
2. The apparatus of claim 1 , wherein the p-region is implanted; and wherein the p-region is structured and arranged to extend a limited length parallel to said group III-Nitride barrier layer such that the p-region is located at least partially under the gate and is not located past the gate near the drain.
3. The apparatus of claim 1 , wherein the p-region is in the substrate below said group III-Nitride barrier layer; and wherein the p-region is structured and arranged to extend a limited length parallel to said group III-Nitride barrier layer such that the p-region is located at least partially under the gate and is not located past the gate near the drain.
4. The apparatus of claim 1 , further comprising an epitaxial layer on the substrate and the p-region is in the epitaxial layer.
5. The apparatus of claim 1 , wherein the p-region is arranged solely in the substrate below said group III-Nitride barrier layer; and wherein the p-region is structured and arranged to extend a limited length parallel to said group III-Nitride barrier layer such that the p-region is located at least partially under the gate and is not located past the gate near the drain.
6. The apparatus of claim 1 , further comprising an epitaxial layer on the substrate and the p-region is arranged solely in the epitaxial layer.
7. The apparatus of claim 1 , further comprising a field plate.
8. The apparatus of claim 1 , further comprising a field plate, wherein the field plate is electrically coupled to said source.
9. The apparatus of claim 8 ,
wherein the p-region is buried below the group III-Nitride barrier layer and the p-region is structured and arranged to extend a limited length parallel to the group III-Nitride barrier layer such that the p-region is not located horizontally past the gate.
10. The apparatus of claim 8 , wherein the p-region is buried below the group III-Nitride barrier layer and the p-region is structured and arranged to extend an entire length parallel to the group III-Nitride barrier layer.
11. An apparatus, comprising:
a substrate;
a group III-Nitride buffer layer on the substrate;
a group III-Nitride barrier layer on the group III-Nitride buffer layer, the group III-Nitride barrier layer comprising a higher bandgap than a bandgap of the group III-Nitride buffer layer;
a source electrically coupled to the group III-Nitride barrier layer;
a gate electrically coupled to the group III-Nitride barrier layer;
a drain electrically coupled to the group III-Nitride barrier layer; and
a p-region being at least one of the following: in the substrate or on the substrate below said group III-Nitride barrier layer,
wherein the p-region is structured and arranged to extend a limited length parallel to the group III-Nitride barrier layer such that the p-region is not located vertically under the gate; and
wherein the p-region is configured without a p-type material contact and without a connection.
12. The apparatus of claim 11 , wherein the p-region is in the substrate below said group III-Nitride barrier layer.
13. The apparatus of claim 11 , further comprising an epitaxial layer on the substrate and the p-region is in the epitaxial layer.
14. The apparatus of claim 11 , wherein the p-region is arranged solely in the substrate below said group III-Nitride barrier layer.
15. The apparatus of claim 11 , further comprising an epitaxial layer on the substrate and the p-region is arranged solely in the epitaxial layer.
16. The apparatus of claim 11 , wherein the p-region is on the substrate below said group III-Nitride barrier layer.
17. The apparatus of claim 16 , wherein the p-region is implanted.
18. The apparatus of claim 1 , further comprising a nucleation layer on the substrate, wherein the group III-Nitride buffer layer is on the nucleation layer.
19. The apparatus of claim 18 , further comprising intervening layers between the nucleation layer and the group III-Nitride buffer layer.
20. The apparatus of claim 1 , wherein a length of the p-region being less than an entire length of the substrate.
21. The apparatus of claim 1 ,
wherein the p-region is provided in the substrate; and
wherein the p-region comprises aluminum implanted in the substrate.
22. The apparatus of claim 1 ,
wherein the p-region is provided in a layer arranged on the substrate;
wherein the layer is an epitaxial layer; and
wherein the layer is at least one of the following: GaN or SiC.
23. The apparatus of claim 7 , wherein the field plate is connected to the source.
24. The apparatus of claim 11 , further comprising a nucleation layer on the substrate, wherein the group III-Nitride buffer layer is on the nucleation layer.
25. The apparatus of claim 24 , further comprising intervening layers between the nucleation layer and the group III-Nitride buffer layer.
26. The apparatus of claim 11 , wherein a length of the p-region being less than an entire length of the substrate.
27. The apparatus of claim 11 ,
wherein the p-region is provided in the substrate; and
wherein the p-region comprises aluminum implanted in the substrate.
28. The apparatus of claim 11 ,
wherein the p-region is provided in a layer arranged on the substrate;
wherein the layer is an epitaxial layer; and
wherein the layer is at least one of the following: GaN or SiC.
29. The apparatus of claim 11 , further comprising a field plate.