Low profile high temperature double sided flip chip power packaging
View Patent ↗A wire bondless, double flip chipped discrete power package including a base plate for structural support, heat spreading, and thermal connection, power substrate for electrical interconnection and isolation, lead frames for external connections, an upper substrate for topside electrical interconnection, and injection molded housing for mounting, isolation, and protection.
1. A discrete power package, comprising:
a base plate defining multiple mounting apertures;
a lower power substrate mounted to the base plate;
a device directly electrically connected, without wire bonds or solder balls, to the lower power substrate;
at least one lead frame connected to the device;
an upper substrate electrically connected to the device; and
a housing surrounding the device.
2. The discrete power package of claim 1 , wherein
the upper substrate is directly electrically connected, without wire bonds or solder balls, to the device.
3. The discrete power package of claim 1 , further comprising:
bolted electrical connections to the at least one lead frame.
4. A discrete power package, comprising:
a base plate defining a first base side, a second base side, and a base front;
a lower power substrate mounted to the base plate;
a device directly electrically connected, without wire bonds or solder balls, to the lower power substrate;
a source lead frame on the first base side, a drain lead frame on the second base side, and both a sense lead frame and a gate lead frame on the base front;
an upper substrate electrically connected to connected to the device; and
a housing surrounding the device.
5. A parallel topology using discrete power packages, comprising:
a first power package and a second power package,
each power package including a source terminal on a first side, a sense terminal on a second side opposite the first side, and both a gate terminal and a drain terminal on a front side connecting the first side and the second side, and a back side also connecting the first and second side, and
the first power package back side positioned adjacent to the second power package front side.
6. A half bridge topology using discrete power packages, comprising:
a first power package and a second power package,
each power package including a source terminal on a first side, a sense terminal on a second side opposite the first side, and both a gate terminal and a drain terminal on a front side connecting the first side and the second side, and a back side also connecting the first and second side, and
the first power package back side positioned adjacent to the second power package back side.
7. A series connection topology using discrete power packages, comprising:
a first power package, a second power package, a third power package, and a fourth power package,
each power package including a source terminal on a first side, a sense terminal on a second side opposite the first side, and both a gate terminal and a drain terminal on a front side connecting the first side and the second side, and a back side also connecting the first and second side, and
the first power package back side positioned adjacent to the second power package back side, the second power package front side positioned adjacent to the third power package front side, and the third power package back side positioned adjacent to the fourth power package back side.
8. The discrete power package of claim 4 , wherein the base plate is a base metal.
9. The discrete power package of claim 4 , wherein the lower power substrate is a bonded ceramic-metal structure.
10. The discrete power package of claim 4 , further comprising a captive fastener for each of the source lead frame, the drain lead frame, the sense lead frame, and the gate lead frame, wherein each captive fastener secures an electrical contact and is configured to move axially toward each lead frame.
11. The discrete power package of claim 4 , wherein the upper substrate is directly electrically connected, without wire bonds or solder balls, to the device.
12. The parallel topology using discrete power packages of claim 5 , wherein the base plate is a base metal.
13. The parallel topology using discrete power packages of claim 5 , wherein the lower power substrate is a bonded ceramic-metal structure.
14. The parallel topology using discrete power packages of claim 5 , further comprising a captive fastener for each of the source lead frame, the drain lead frame, the sense lead frame, and the gate lead frame, wherein each captive fastener secures an electrical contact and is configured to move axially toward each lead frame.
15. The half bridge topology using discrete power packages of claim 6 , wherein the base plate is a base metal.
16. The half bridge topology using discrete power packages of claim 6 , wherein the lower power substrate is a bonded ceramic-metal structure.
17. The half bridge topology using discrete power packages of claim 6 , further comprising a captive fastener for each of the source lead frame, the drain lead frame, the sense lead frame, and the gate lead frame, wherein each captive fastener secures an electrical contact and is configured to move axially toward each lead frame.
18. The series connection topology using discrete power packages of claim 7 , wherein the base plate is a base metal.
19. The series connection topology using discrete power packages of claim 7 , wherein the lower power substrate is a bonded ceramic-metal structure.
20. The series connection topology using discrete power packages of claim 7 , further comprising a captive fastener for each of the source lead frame, the drain lead frame, the sense lead frame, and the gate lead frame, wherein each captive fastener secures an electrical contact and is configured to move axially toward each lead frame.