Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
The disclosure is directed to a high-electron mobility transistor that includes a SiC substrate layer, a GaN buffer layer arranged on the SiC substrate layer, and a p-type material layer having a length parallel to a surface of the SiC substrate layer over which the GaN buffer layer is provided. The p-type material layer is provided in one of the following: the SiC substrate layer and a first layer arranged on the SiC substrate layer. A method of making the high-electron mobility transistor is also disclosed.
1. An apparatus, comprising:
a substrate;
a group III-Nitride buffer layer on the substrate;
a group III-Nitride barrier layer on the group III-Nitride buffer layer, the group III-Nitride barrier layer comprising a higher bandgap than a bandgap of the group III-Nitride buffer layer;
a source electrically coupled to the group III-Nitride barrier layer;
a gate electrically coupled to the group III-Nitride barrier layer;
a drain electrically coupled to the group III-Nitride barrier layer; and
a p-region in or on the substrate below said group III-Nitride barrier layer,
wherein the gate is electrically coupled to said p-region.
2. The apparatus of claim 1 , further comprising an interconnect configured to couple the gate to said p-region.
3. The apparatus of claim 1 , further comprising a field plate.
4. The apparatus of claim 1 , further comprising a contact electrically coupled to said p-region.
5. The apparatus of claim 1 , further comprising a nucleation layer on the substrate, wherein the group III-Nitride buffer layer is on the nucleation layer.
6. The apparatus of claim 5 , further comprising intervening layers between the nucleation layer and the group III-Nitride buffer layer.
7. The apparatus of claim 1 , wherein a length of the p-region being less than an entire length of the substrate.
8. The apparatus of claim 1 ,
wherein the p-region is provided in the substrate; and
wherein the p-region comprises aluminum implanted in the substrate.
9. The apparatus of claim 1 ,
wherein the p-region is provided in a layer arranged on the substrate;
wherein the layer is an epitaxial layer; and
wherein the layer is at least one of the following: GaN or SiC.
10. A method of making a device comprising:
providing a substrate;
providing a group III-Nitride buffer layer on the substrate;
providing a group III-Nitride barrier layer on the group III-Nitride buffer layer, the group III-Nitride barrier layer comprising a higher bandgap than a bandgap of the group III-Nitride buffer layer;
electrically coupling a source to the group III-Nitride barrier layer;
electrically coupling a gate to the group III-Nitride barrier layer;
electrically coupling a drain to the group III-Nitride barrier layer;
providing a p-region in or on the substrate below said group III-Nitride barrier layer; and
coupling an interconnect from the gate to said p-region.
11. The method of claim 10 , further comprising providing a field plate.
12. The method of claim 10 , further comprising arranging a contact and electrically coupling the contact to said p-region.
13. The method of claim 10 , further comprising providing a nucleation layer on the substrate, wherein the group III-Nitride buffer layer is on the nucleation layer.
14. The method of claim 10 , wherein the p-region is provided in the substrate; and
the method further comprises implanting aluminum in the substrate to form the p-region.
15. The method of claim 10 ,
wherein the p-region is provided in a layer arranged on the substrate;
wherein the layer is an epitaxial layer; and
wherein the layer is at least one of the following: GaN or SiC.
16. The apparatus of claim 1 , wherein the source is electrically coupled to said p-region.
17. The apparatus of claim 3 , wherein the field plate is connected to the source.
18. The method of claim 10 , further comprising electrically coupling the source to said p-region.
19. The method of claim 11 , further comprising connecting the field plate to the source.
20. The apparatus of claim 2 , further comprising a field plate.
21. The apparatus of claim 20 , wherein the field plate is connected to the source.