Radio frequency amplifier implementing an input baseband enhancement circuit and a process of implementing the same
An amplifier includes an input matching network; at least one transistor; an input lead coupled to the at least one transistor; a ground terminal coupled to the transistor; an output lead coupled to the at least one transistor; an output matching circuit coupled to the output lead and to the at least one transistor; and a baseband impedance enhancement circuit having at least one reactive element coupled to the input matching network. The baseband impedance enhancement circuit is configured to reduce resonances of a baseband termination.
1. An amplifier comprising:
an input matching network;
at least one transistor;
an input lead coupled to the at least one transistor;
a ground terminal coupled to the transistor;
an output lead coupled to the at least one transistor;
an output matching circuit coupled to the output lead and to the at least one transistor; and
a baseband impedance enhancement circuit having at least one reactive element coupled to the input matching network,
wherein the baseband impedance enhancement circuit is configured to reduce resonances of a baseband termination;
wherein the at least one reactive element of the baseband impedance enhancement circuit includes at least one of the following: an inductor, a capacitor, and a reference potential port; and
wherein the input matching network includes reactive elements and the at least one reactive element of the baseband impedance enhancement circuit is coupled between the reactive elements of the input matching network.
2. The amplifier according to claim 1 wherein:
the at least one reactive element of the baseband impedance enhancement circuit includes at least an inductor and a capacitor; and
the baseband impedance enhancement circuit is configured to provide improved digital predistortion (DPD) operation.
3. An amplifier comprising:
an input matching network;
at least one transistor;
an input lead coupled to the at least one transistor;
a ground terminal coupled to the transistor;
an output lead coupled to the at least one transistor;
an output matching circuit coupled to the output lead and to the at least one transistor; and
a baseband impedance enhancement circuit having at least one reactive element coupled to the input matching network,
wherein:
the baseband impedance enhancement circuit is configured to reduce resonances of a baseband termination;
the at least one reactive element of the baseband impedance enhancement circuit includes an inductor, a capacitor, and a reference potential port;
the input matching network includes reactive elements and the at least one reactive element of the baseband impedance enhancement circuit is coupled between the reactive elements of the input matching network; and
the baseband impedance enhancement circuit is configured to improve a baseband impedance.
4. The amplifier according to claim 1 wherein:
the baseband impedance enhancement circuit is configured to push and/or move resonances of a baseband termination to higher frequencies.
5. An amplifier comprising:
an input matching network;
at least one transistor;
an input lead coupled to the at least one transistor;
a ground terminal coupled to the transistor;
an output lead coupled to the at least one transistor;
an output matching circuit coupled to the output lead and to the at least one transistor; and
a baseband impedance enhancement circuit having at least one reactive element coupled to the input matching network,
wherein:
the baseband impedance enhancement circuit is configured to reduce resonances of a baseband termination;
the input matching network includes at least one reactive element coupled to the at least one reactive element of the baseband impedance enhancement circuit; and
the amplifier implementing the baseband impedance enhancement circuit is configured to operate with an impedance below two Ohms in at least a frequency range from at least 1 MHz to 150 MHz.
6. The amplifier according to claim 1 wherein the at least one transistor comprises a GaN based transistor.
7. The amplifier according to claim 1 wherein the at least one transistor comprises a LDMOS based transistor.
8. The amplifier according to claim 1 wherein:
the at least one transistor comprises a transistor implemented as a carrier amplifier; and
the at least one transistor comprises a transistor implemented as a peaking amplifier.
9. The amplifier according to claim 1 further comprising:
a metal flange, a first electrically conductive lead, a second electrically conductive lead, and an electrically conductive die pad.
10. A process of implementing an amplifier comprising:
providing an input matching network;
providing at least one transistor;
coupling an input lead to the at least one transistor;
coupling a ground terminal to the transistor;
coupling an output lead to the at least one transistor;
coupling an output matching circuit to the output lead and to the at least one transistor; and
coupling a baseband impedance enhancement circuit having at least one reactive element to the input matching network,
wherein the baseband impedance enhancement circuit is configured to reduce resonances of a baseband termination;
wherein the at least one reactive element of the baseband impedance enhancement circuit includes at least one of the following: an inductor, a capacitor, and a reference potential port; and
wherein the input matching network includes reactive elements and the at least one reactive element of the baseband impedance enhancement circuit is coupled between the reactive elements of the input matching network.
11. The process of implementing an amplifier according to claim 10 wherein:
the at least one reactive element of the baseband impedance enhancement circuit includes at least an inductor and a capacitor; and
the baseband impedance enhancement circuit is configured to provide improved digital predistortion (DPD) operation.
12. A process of implementing an amplifier comprising:
providing an input matching network;
providing at least one transistor;
coupling an input lead to the at least one transistor;
coupling a ground terminal to the transistor;
coupling an output lead to the at least one transistor;
coupling an output matching circuit to the output lead and to the at least one transistor; and
coupling a baseband impedance enhancement circuit having at least one reactive element to the input matching network,
wherein:
the baseband impedance enhancement circuit is configured to reduce resonances of a baseband termination;
the at least one reactive element of the baseband impedance enhancement circuit includes an inductor, a capacitor, and a reference potential port;
the input matching network includes reactive elements and the at least one reactive element of the baseband impedance enhancement circuit is coupled between the reactive elements of the input matching network; and
the baseband impedance enhancement circuit is configured to improve a baseband impedance.
13. The process of implementing an amplifier according to claim 10 wherein:
the baseband impedance enhancement circuit is configured to push and/or move resonances of a baseband termination to higher frequencies.
14. A process of implementing an amplifier comprising:
providing an input matching network;
providing at least one transistor;
coupling an input lead to the at least one transistor;
coupling a ground terminal to the transistor;
coupling an output lead to the at least one transistor;
coupling an output matching circuit to the output lead and to the at least one transistor; and
coupling a baseband impedance enhancement circuit having at least one reactive element to the input matching network,
wherein:
the baseband impedance enhancement circuit is configured to reduce resonances of a baseband termination;
the input matching network includes at least one reactive element coupled to the at least one reactive element of the baseband impedance enhancement circuit; and
the amplifier implementing the baseband impedance enhancement circuit is configured to operate with an impedance below two Ohms in at least a frequency range from at least 1 MHz to 150 MHz.
15. The process of implementing an amplifier according to claim 10 wherein:
the at least one transistor comprises a GaN based transistor; and
the baseband impedance enhancement circuit is configured to improve a baseband impedance.
16. The process of implementing an amplifier according to claim 10 wherein the at least one transistor comprises a LDMOS based transistor.
17. The process of implementing an amplifier according to claim 10 further comprising:
implementing the at least one transistor comprises implementing a transistor as a carrier amplifier; and
implementing the at least one transistor comprises implementing a transistor as a peaking amplifier.
18. An amplifier comprising:
an input matching network;
at least one transistor;
an input lead coupled to the at least one transistor;
a ground terminal coupled to the transistor;
an output lead coupled to the at least one transistor;
an output matching circuit coupled to the output lead and to the at least one transistor; and
a baseband impedance enhancement circuit having at least one reactive element coupled to the input matching network,
wherein the input matching network includes at least one reactive element coupled to the at least one reactive element of the baseband impedance enhancement circuit; and
wherein the baseband impedance enhancement circuit is configured to reduce resonances of a baseband termination;
wherein the at least one reactive element of the baseband impedance enhancement circuit includes at least one of the following: an inductor, a capacitor, and a reference potential port;
wherein the input matching network includes reactive elements and the at least one reactive element of the baseband impedance enhancement circuit is coupled between the reactive elements of the input matching network; and
wherein the baseband impedance enhancement circuit is configured to provide improved digital predistortion (DPD) operation.
19. An amplifier comprising:
an input matching network;
at least one transistor;
an input lead coupled to the at least one transistor;
a ground terminal coupled to the transistor;
an output lead coupled to the at least one transistor;
an output matching circuit coupled to the output lead and to the at least one transistor; and
a baseband impedance enhancement circuit having at least one reactive element coupled to the input matching network,
wherein:
the input matching network includes at least one reactive element coupled to the at least one reactive element of the baseband impedance enhancement circuit; and
the baseband impedance enhancement circuit is configured to reduce resonances of a baseband termination;
the at least one reactive element of the baseband impedance enhancement circuit includes an inductor, a capacitor, and a reference potential port;
the baseband impedance enhancement circuit is configured to improve a baseband impedance; and
the amplifier implementing the baseband impedance enhancement circuit is configured to operate with an impedance below two Ohms in at least a frequency range from at least 1 MHz to 150 MHz.
20. An amplifier comprising:
an input matching network;
at least one transistor;
an input lead coupled to the at least one transistor;
a ground terminal coupled to the transistor;
an output lead coupled to the at least one transistor;
an output matching circuit coupled to the output lead and to the at least one transistor; and
a baseband impedance enhancement circuit having at least one reactive element coupled to the input matching network,
wherein:
the input matching network includes at least one reactive element coupled to the at least one reactive element of the baseband impedance enhancement circuit; and
the baseband impedance enhancement circuit is configured to reduce resonances of a baseband termination;
the at least one reactive element of the baseband impedance enhancement circuit includes at least one of the following: an inductor, a capacitor, and a reference potential port;
the input matching network includes reactive elements and the at least one reactive element of the baseband impedance enhancement circuit is coupled between the reactive elements of the input matching network; and
the baseband impedance enhancement circuit is configured to push and/or move resonances of a baseband termination to higher frequencies.
21. The amplifier according to claim 18 wherein the at least one transistor comprises a GaN based transistor.
22. The amplifier according to claim 18 wherein the at least one transistor comprises a LDMOS based transistor.
23. The amplifier according to claim 18 wherein:
the at least one transistor comprises a transistor implemented as a carrier amplifier; and
the at least one transistor comprises a transistor implemented as a peaking amplifier.
24. The amplifier according to claim 18 further comprising:
a metal flange, a first electrically conductive lead, a second electrically conductive lead, and an electrically conductive die pad.