Wideband RF short/DC block circuit for RF devices and applications
Inductance-capacitance (LC) resonators having different resonant frequencies, and radio frequency (RF) transistor amplifiers including the same. One usage of such LC resonators is to implement RF short/DC block circuits. A RF transistor amplifier may include a transistor on a base of the RF transistor amplifier coupled to an input and an output of the RF transistor amplifier; a first inductance-capacitance (LC) resonator comprising a first inductance and a first capacitance; and a second LC resonator comprising a second inductance and a second capacitance. The first LC resonator may be configured to resonate at a first frequency, and the second LC resonator may be configured to resonate at a second frequency different from the first frequency.
1. A radio frequency (RF) transistor amplifier, comprising:
a transistor on a base of the RF transistor amplifier and coupled to an input and an output of the RF transistor amplifier;
a first inductance-capacitance (LC) resonator comprising a first inductance and a first capacitance; and
a second LC resonator comprising a second inductance and a second capacitance; and
a third inductance having a first end coupled to the transistor and a second end coupled to the first and second LC resonators,
wherein the first LC resonator is configured to resonate at a first frequency, and the second LC resonator is configured to resonate at a second frequency different from the first frequency, and
wherein the first LC resonator and the second LC resonator are both coupled to either the input or the output of the RF transistor amplifier.
2. The RF transistor amplifier of claim 1 , wherein the first inductance comprises a first bond wire and wherein the second inductance comprises a second bond wire.
3. The RF transistor amplifier of claim 2 , wherein the first bond wire and the second bond wire are different in length, profile, and/or cross-sectional area.
4. The RF transistor amplifier of claim 2 , wherein the first bond wire and the second bond wire have different cross-section shapes.
5. The RF transistor amplifier of claim 2 , wherein the first bond wire comprises a first value for a selected characteristic, and wherein the second bond wire comprises a second value for the selected characteristic that is different from the first value.
6. The RF transistor amplifier of claim 1 , wherein the first capacitance comprises a capacitance value that differs from a capacitance value of the second capacitance.
7. The RF transistor amplifier of claim 6 , wherein the first inductance is equal to the second inductance.
8. The RF transistor amplifier of claim 6 , wherein the first inductance comprises a first bond wire and wherein the second inductance comprises a second bond wire, and wherein the first bond wire and the second bond wire are different in length, material, profile, and/or cross-sectional area.
9. The RF transistor amplifier of claim 8 , wherein the first bond wire and the second bond wire have different cross-section shapes.
10. The RF transistor amplifier of claim 1 , wherein the first inductance is different from the second inductance, and wherein the first capacitance is equal to the second capacitance.
11. The RF transistor amplifier of claim 1 , comprising a plurality of LC resonators each coupled to the input or output of the RF transistor amplifier, the plurality of LC resonators including the first and second LC resonators, wherein the plurality of LC resonators are configured collectively to attenuate RF signals across a frequency band.
12. The RF transistor amplifier of claim 11 , wherein the first frequency is below a central frequency of the frequency band, and wherein the second frequency is above the central frequency of the frequency band.
13. A radio frequency (RF) transistor amplifier, comprising:
a transistor on a base of the RF transistor amplifier and coupled to an input lead and an output lead of the RF transistor amplifier;
a first inductance-capacitance (LC) resonator comprising a first set of inductive bond wires extending between the input lead or the output lead and a first capacitance; and
a second LC resonator comprising a second set of inductive bond wires extending between the input lead or the output lead and a second capacitance;
wherein the first LC resonator is configured to resonate at a first frequency, and the second LC resonator is configured to resonate at a second frequency different from the first frequency, and
wherein the first LC resonator and the second LC resonator are coupled in parallel between the input lead or the output lead of the RF transistor amplifier and ground.
14. The RF transistor amplifier of claim 13 , wherein the first set of inductive bond wires and the second set of inductive bond wires are different in length, material, profile, and/or cross-sectional area.
15. The RF transistor amplifier of claim 13 , comprising a plurality of LC resonators each coupled to the input lead or output lead of the RF transistor amplifier, the plurality of LC resonators including the first and second LC resonators, wherein the plurality of LC resonators are configured collectively to attenuate RF signals across a frequency band.
16. The RF transistor amplifier of claim 15 , wherein the first frequency is below a central frequency of the frequency band, and wherein the second frequency is above the central frequency of the frequency band.
17. A radio frequency (RF) transistor amplifier, comprising:
a transistor on a base of the RF transistor amplifier and coupled to an input and an output of the RF transistor amplifier; and
an output circuit configured to attenuate RF signals across an output frequency band, wherein the output circuit comprises a plurality of inductance-capacitance (LC) resonators, each coupled to the output of the RF transistor amplifier, and each configured to resonate at a respective different frequency,
wherein a first LC resonator of the plurality of LC resonators is configured to resonate at a first frequency below a central frequency of the output frequency band, and wherein a second LC resonator of the plurality of LC resonators is configured to resonate at a second frequency above the central frequency of the output frequency band.
18. The RF transistor amplifier of claim 17 , wherein each LC resonator comprises a respective set of inductive bond wires.
19. The RF transistor amplifier of claim 18 , wherein the inductive bond wires of each set of inductive bond wires differs in length, material, profile, and/or cross-sectional area from the inductive bond wires of the other sets of inductive bond wires.
20. The RF transistor amplifier of claim 1 , wherein the third inductance is coupled to a drain of the transistor, further comprising a harmonic reducer coupled between the drain of the transistor and the third inductance.