IP Library Assignment 058823/0351
Patent Assignment
Reel/Frame 058823/0351

Change of Name

Recorded: 2022-01-24 Pages: 6
Assignor
CREE, INC.
Executed: 2021-10-01
Assignee
WOLFSPEED, INC.
4600 SILICON DRIVE, DURHAM, NORTH CAROLINA, 27703
Covered Properties (56)
Stabilized, High-Doped Silicon Carbide
Application: 16/751,246 →
Publication: US US20200157705A1
Semiconductor Devices Having Unit Cell Transistors with Smoothed Turn-on Behavior and Improved Linearity
Application: 17/190,559 →
Publication: US US20210193825A1
Bypassed Gate Transistors Having Improved Stability
Application: 16/907,983 →
Publication: US US20200321458A1
Monolithic Microwave Integrated Circuits Having Both Enhancement-Mode and Depletion Mode Transistors
Application: 17/111,561 →
Publication: US US20210119029A1
Drain and/or Gate Interconnect and Finger Structure
Application: 16/998,287 →
Publication: US US20200381527A1
Transistor Level Input and Output Harmonic Terminations
Application: 17/103,993 →
Publication: US US20210083641A1
Packaged Transistor Devices with Input-Output Isolation and Methods of Forming Packaged Transistor Devices with Input-Output Isolation
Application: 17/010,479 →
Publication: US US20200402933A1
High Electron Mobility Transistors Having Improved Drain Current Drift and/or Leakage Current Performance
Application: 17/148,688 →
Publication: US US20210134966A1
High Power Transistor with Interior-Fed Fingers
Application: 16/393,280 →
Publication: US US20200343352A1
In-Transistor Load Modulation
Application: 16/367,631 →
Publication: US US20200313624A1
High Reliability Semiconductor Devices and Methods of Fabricating the Same
Application: 16/421,824 →
Publication: US US20200373270A1
Radio Frequency Amplifiers Having Improved Shunt Matching Circuits
Application: 16/737,188 →
Publication: US US20210210444A1
Semiconductor Device Having a First Barrier Layer Formed on a Gate Pad and Gate Electrode and an Isolation Layer Provided Between the First Barrier Layer and a Second Barrier Layer Formed Thereon
Application: 16/863,642 →
Publication: US US20210343847A1
Group Iii Nitride-Based Radio Frequency Amplifiers Having Back Side Source, Gate and/or Drain Terminals
Application: 17/211,281 →
Publication: US US20210313286A1
Multi Level Radio Frequency (Rf) Integrated Circuit Components Including Passive Devices
Application: 17/031,745 →
Publication: US US20210313283A1
Trenched Power Device with Segmented Trench and Shielding
Application: 16/863,399 →
Publication: US US20210343834A1
Conduction Enhancement Layers for Electrical Contact Regions in Power Devices
Application: 16/863,797 →
Publication: US US20210343708A1
Radio Frequency (Rf) Transistor Amplifier Packages with Improved Isolation and Lead Configurations
Application: 16/913,783 →
Publication: US US20210408979A1
Packaging for Rf Transistor Amplifiers
Application: 17/018,721 →
Publication: US US20220084950A1
Radio Frequency Transistor Amplifiers Having Leadframes with Integrated Shunt Inductors and/or Direct Current Voltage Source Inputs
Application: 16/910,900 →
Publication: US US20210408978A1
Stacked Rf Circuit Topology
Application: 17/210,660 →
Publication: US US20210313284A1
Methods for Pillar Connection on Frontside and Passive Device Integration on Backside of Die
Application: 16/889,432 →
Publication: US US20210375856A1
Wideband Rf Short/Dc Block Circuit for Rf Devices and Applications
Application: 16/913,374 →
Publication: US US20210408977A1
Stacked Rf Circuit Topology Using Transistor Die with Through Silicon Carbide Vias on Gate and/or Drain
Application: 17/210,674 →
Publication: US US20210313285A1
Rf Amplifier Devices Including Interconnect Structures and Methods of Manufacturing
Application: 16/906,610 →
Publication: US US20210313282A1
Rf Amplifier Devices Including Top Side Contacts and Methods of Manufacturing
Application: 17/018,762 →
Publication: US US20210313293A1
Radio Frequency Transistor Amplifiers Having Multi-Layer Encapsulations That Include Functional Electrical Circuits
Application: 17/085,367 →
Publication: US US20220140794A1
Die-To-Die Isolation Structures for Packaged Transistor Devices
Application: 16/944,002 →
Publication: US US20220037464A1
Sidewall Dopant Shielding Methods and Approaches for Trenched Semiconductor Device Structures
Application: 16/993,680 →
Publication: US US20220052152A1
Rf Amplifiers Having Shielded Transmission Line Structures
Application: 16/888,957 →
Publication: US US20210376807A1
Transistor Packages with Improved Die Attach
Application: 17/085,386 →
Publication: US US20220139852A1
Power Silicon Carbide Based Semiconductor Devices with Improved Short Circuit Capabilities and Methods of Making Such Devices
Application: 17/004,531 →
Publication: US US20220069138A1
Multi-Zone Radio Frequency Transistor Amplifiers
Application: 16/911,757 →
Publication: US US20210408976A1
Packaged Rf Power Device with Pcb Routing Outside Protective Member
Application: 17/097,294 →
Publication: US US20220157671A1
Power Semiconductor Devices Including a Trenched Gate and Methods of Forming Such Devices
Application: 17/080,956 →
Publication: US US20220130995A1
Semiconductor Power Devices Having Multiple Gate Trenches and Methods of Forming Such Devices
Application: 17/097,617 →
Publication: US US20220157959A1
Semiconductor Devices Including an Offset Metal to Polysilicon Gate Contact
Application: 17/096,147 →
Publication: US US20220149165A1
Gate Trench Power Semiconductor Devices Having Improved Deep Shield Connection Patterns
Application: 17/082,647 →
Publication: US US20220130996A1
Gate Trench Power Semiconductor Devices Having Improved Deep Shield Connection Patterns
Application: 17/172,481 →
Publication: US US20220130997A1
Radio Frequency Transistor Amplifiers Having Widened and/or Asymmetric Source/Drain Regions for Improved on-Resistance Performance
Application: 17/144,346 →
Publication: US US20220223700A1
Finfet Power Semiconductor Devices
Application: 17/108,505 →
Publication: US US20220173227A1
Packaged Electronic Devices Having Dielectric Substrates with Thermally Conductive Adhesive Layers
Application: 17/159,925 →
Publication: US US20220238426A1
Semiconductor Devices Having Gate Resistors with Low Variation in Resistance Values
Application: 17/188,329 →
Publication: US US20220278212A1
High Output Power Density Radio Frequency Transistor Amplifiers in Flat No-Lead Overmold Packages
Application: 17/213,895 →
Publication: US US20220311392A1
Bias Circuits and Improved Linearity Bias Schemes for Rf Power Devices
Application: 17/159,825 →
Output-Integrated Transistor Amplifier Device Packages Incorporating Internal Connections
Application: 17/313,567 →
Publication: US US20220360230A1
High Electron Mobility Transistors Having Improved Performance
Application: 17/325,765 →
Publication: US US20220376099A1
Transistors Including Semiconductor Surface Modification and Related Fabrication Methods
Application: 17/325,488 →
Publication: US US20220376104A1
Methods of Manufacturing High Electron Mobility Transistors Having a Modified Interface Region
Application: 17/325,628 →
Publication: US US20220376085A1
Encapsulation Stack for Improved Humidity Performance and Related Fabrication Methods
Application: 17/390,020 →
Publication: US US20230031205A1
Interconnect Metal Openings Through Dielectric Films
Application: 17/390,316 →
Publication: US US20230029763A1
Multilayer Encapsulation for Humidity Robustness and Related Fabrication Methods
Application: 17/335,796 →
Publication: US US20220384366A1
Output-Integrated Transistor Device Packages
Application: 17/313,616 →
Publication: US US20220360233A1
Packaged Transistor Amplifiers That Include Integrated Passive Device Matching Structures Having Distributed Shunt Inductances
Application: 17/340,492 →
Publication: US US20220392857A1
Wide Bandgap Field Effect Transistors with Source Connected Field Plates
Application: 15/696,050 →
Publication: US US20170365670A1
Wide bandgap transistors with gate-source field plates
Application: 11/078,265 →
Publication: US US20060202272A1
Related Assignments (25)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest Mar 28, 2019
From: MOKHTI, ZULHAZMI A.; TRANG, FRANK; JANG, HAEDONG
To: CREE, INC.
Reel/Frame 048726/0376 →
Assignment of Assignor's Interest Apr 24, 2019
From: TRANG, FRANK; MOKHTI, ZULHAZMI; JANG, HAEDONG
To: CREE, INC.
Reel/Frame 048984/0034 →
Assignment of Assignor's Interest May 24, 2019
From: JOO, SUNG CHUL; KOMPOSCH, ALEXANDER; CONDIE, BRIAN WILLIAM; LAW, BENJAMIN
To: CREE, INC.
Reel/Frame 049277/0084 →
Assignment of Assignor's Interest Jan 8, 2020
From: WARD, SIMON; WILSON, RICHARD; KOMPOSCH, ALEXANDER
To: CREE, INC.
Reel/Frame 051451/0050 →
Assignment of Assignor's Interest Apr 30, 2020
From: LICHTENWALNER, DANIEL JENNER
To: CREE, INC.
Reel/Frame 052541/0181 →
Assignment of Assignor's Interest Oct 13, 2020
From: LICHTENWALNER, DANIEL JENNER; KIM, WOONGSUN
To: CREE, INC.
Reel/Frame 054041/0032 →
Confirmatory Assignment Jan 11, 2021
From: WILSON, RICHARD
To: CREE, INC.
Reel/Frame 054944/0455 →
Assignment of Assignor's Interest Jan 19, 2021
From: CHIDURALA, MADHU
To: CREE, INC.
Reel/Frame 054957/0237 →
Assignment of Assignor's Interest Feb 9, 2021
From: LICHTENWALNER, DANIEL JENNER; VAN BRUNT, EDWARD ROBERT
To: CREE, INC.
Reel/Frame 055199/0059 →
Assignment of Assignor's Interest Mar 24, 2021
From: WATTS, MICHAEL E.; BOKATIUS, MARIO; KIM, JANGHEON; MU, QIANLI
To: CREE, INC.
Reel/Frame 055703/0753 →
Assignment of Assignor's Interest Jan 21, 2022
From: FAYED, KHALED; WOOD, SIMON
To: CREE, INC.
Reel/Frame 058718/0360 →
Assignment of Assignor's Interest Jan 21, 2022
From: LEE, KYOUNG-KEUN; RADULESCU, FABIAN; SHEPPARD, SCOTT
To: CREE, INC.
Reel/Frame 058718/0001 →
Assignment of Assignor's Interest Jan 21, 2022
From: POWELL, ADRIAN; BURK, AL; O'LOUGHLIN, MICHAEL
To: CREE, INC.
Reel/Frame 058718/0017 →
Assignment of Assignor's Interest Jan 21, 2022
From: LIU, YUEYING; SRIRAM, SAPTHARISHI; SHEPPARD, SCOTT; GAO, JENNIFER
To: CREE, INC.
Reel/Frame 058718/0106 →
Assignment of Assignor's Interest Jan 21, 2022
From: TRANG, FRANK; JANG, HAEDONG; MOKHTI, ZULHAZMI
To: CREE, INC.
Reel/Frame 058718/0157 →
Assignment of Assignor's Interest Jan 21, 2022
From: SRIRAM, SAPTHARISHI; GAO, JENNIFER; FISHER, JEREMY; SHEPPARD, SCOTT
To: CREE, INC.
Reel/Frame 058718/0483 →
Assignment of Assignor's Interest Jan 21, 2022
From: TRANG, FRANK; MOKHTI, ZULHAZMI; JANG, HAEDONG
To: CREE, INC.
Reel/Frame 058718/0547 →
Assignment of Assignor's Interest Jan 21, 2022
From: TRANG, FRANK; MOKHTI, ZULHAZMI; BIGNY, GUILLAUME
To: CREE, INC.
Reel/Frame 058718/0711 →
Security Interest Jun 30, 2023
From: WOLFSPEED, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION
Reel/Frame 064185/0755 →
Change of Name Aug 16, 2023
From: CREE, INC.
To: WOLFSPEED, INC.
Reel/Frame 064615/0365 →
Assignment of Assignor's Interest Aug 18, 2023
From: TRANG, FRANK; MOKHTI, ZULHAZMI; JANG, HAEDONG
To: CREE, INC.
Reel/Frame 064635/0149 →
Release of Security Interest in Patent Collateral at Reel/Frame No. 64185/0755 Dec 4, 2023
From: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: WOLFSPEED, INC.
Reel/Frame 065758/0625 →
Assignment of Assignor's Interest Dec 29, 2023
From: WOLFSPEED, INC.
To: MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.
Reel/Frame 066236/0086 →
Release of Security Interest in Intellectual Property Collateral at Reel/Frame No. 64185/0755 Sep 30, 2025
From: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: WOLFSPEED, INC.
Reel/Frame 072989/0001 →
Notice of Grant of Security Interest in Intellectual Property Sep 30, 2025
From: WOLFSPEED, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 072992/0113 →