FinFET power semiconductor devices
A power semiconductor device includes a semiconductor layer structure comprising a wide bandgap semiconductor material. The semiconductor layer structure includes a drift region of a first conductivity type and a plurality of fin structures protruding from the drift region. The fin structures comprise respective source regions of the first conductivity type and respective channel regions between the respective source regions and the drift region. Related devices and methods are also discussed.
1. A power semiconductor device, comprising:
a semiconductor layer structure comprising a wide bandgap semiconductor material, the semiconductor layer structure including a drift region of a first conductivity type and a plurality of fin structures protruding from the drift region, wherein the drift region comprises a first dopant concentration,
wherein the fin structures comprise respective source regions of the first conductivity type and respective channel regions between the respective source regions and the drift region, wherein the respective channel regions comprise a second dopant concentration that is less than the first dopant concentration; and
shielding regions of a second conductivity type in portions of the drift region between the fin structures and a substrate of the semiconductor layer structure.
2. The power semiconductor device of claim 1 , wherein the respective source regions comprise a third dopant concentration that is greater than the first and second dopant concentrations.
3. The power semiconductor device of claim 1 , wherein the respective channel regions comprise regions of the first conductivity type having the second dopant concentration.
4. The power semiconductor device of claim 1 , wherein the respective channel regions comprise well regions of a second conductivity type having the second dopant concentration.
5. The power semiconductor device of claim 1 , wherein respective boundaries of the shielding regions are substantially aligned with respective sidewalls of the fin structures.
6. A power semiconductor device, comprising:
a semiconductor layer structure comprising a wide bandgap semiconductor material, the semiconductor layer structure including a drift region of a first conductivity type and a plurality of fin structures protruding from the drift region, wherein the fin structures comprise respective source regions of the first conductivity type and respective first channel regions between the respective source regions and the drift region;
shielding regions of a second conductivity type in portions of the drift region between the fin structures and a substrate of the semiconductor layer structure; and
second channel regions between the shielding regions and a surface of the drift region from which the fin structures protrude.
7. The power semiconductor device of claim 5 , further comprising:
respective buried regions of the first conductivity type in portions of the drift region between the shielding regions, wherein the respective buried regions comprise a higher dopant concentration than the drift region.
8. The power semiconductor device of claim 1 , wherein the shielding regions laterally extend between adjacent ones of the fin structures and are connected to an electrical ground between the adjacent ones of the fin structures.
9. A power semiconductor device, comprising:
a semiconductor layer structure comprising a wide bandgap semiconductor material, the semiconductor layer structure including a drift region of a first conductivity type and a plurality of fin structures protruding from the drift region, wherein the fin structures comprise respective source regions of the first conductivity type and respective channel regions between the respective source regions and the drift region; and
shielding regions of a second conductivity type in portions of the drift region between the fin structures and a substrate of the semiconductor layer structure, wherein respective boundaries of the shielding regions are offset from respective sidewalls of the fin structures.
10. A power semiconductor device, comprising:
a semiconductor layer structure comprising a wide bandgap semiconductor material, the semiconductor layer structure including a drift region of a first conductivity type and a plurality of fin structures protruding from the drift region, wherein the fin structures comprise respective source regions of the first conductivity type and respective channel regions between the respective source regions and the drift region;
shielding regions of a second conductivity type in portions of the drift region between the fin structures and a substrate of the semiconductor layer structure; and
respective trenches extending into the drift region between the fin structures, wherein the respective trenches are offset from respective sidewalls of the fin structures, and wherein the shielding regions extend along floor surfaces of the respective trenches.
11. A power semiconductor device, comprising:
a semiconductor layer structure comprising a wide bandgap semiconductor material, the semiconductor layer structure including a drift region of a first conductivity type and a plurality of fin structures protruding from the drift region, wherein the fin structures comprise respective source regions of the first conductivity type and respective channel regions between the respective source regions and the drift region; and
shielding regions of a second conductivity type in portions of the drift region between the fin structures and a substrate of the semiconductor layer structure, wherein the shielding regions comprise a semiconductor material that is different than the wide bandgap semiconductor material.
12. A power semiconductor device, comprising:
a semiconductor layer structure comprising a wide bandgap semiconductor material, the semiconductor layer structure including a drift region of a first conductivity type and a plurality of fin structures protruding from the drift region, wherein the fin structures comprise respective source regions of the first conductivity type and respective channel regions between the respective source regions and the drift region; and
shielding regions of a second conductivity type in portions of the drift region between the fin structures and a substrate of the semiconductor layer structure, wherein the shielding regions on opposite sides of a respective one of the fin structures are asymmetric.
13. The power semiconductor device of claim 1 , wherein the respective channel regions have the first conductivity type and are free of p-n junctions therein.
14. The power semiconductor device of claim 1 , wherein the fin structures are separated from one another along a first direction, and wherein the fin structures comprise respective widths of about 50 nanometers (nm) to about 200 nm in the first direction.
15. The power semiconductor device of claim 1 , further comprising:
gate structures on at least one sidewall of the fin structures, respectively,
wherein the respective channel regions are configured to conduct electrical current between the respective source regions and the drift region throughout a majority of respective volumes of the fin structures responsive to a voltage applied to the gate structures.
16. The power semiconductor device of claim 1 , wherein the fin structures protrude from a surface of the semiconductor layer structure, and wherein the fin structures are separated from one another along first and second directions along the surface.
17. A power semiconductor device, comprising:
a semiconductor layer structure comprising a wide bandgap semiconductor material, the semiconductor layer structure including a drift region of a first conductivity type and a plurality of fin structures protruding from the drift region, wherein the fin structures comprise respective source regions of the first conductivity type and respective channel regions between the respective source regions and the drift region; and
gate structures on at least one sidewall of the fin structures, respectively,
wherein the respective channel regions are configured to conduct electrical current between the respective source regions and the drift region throughout a majority of respective volumes of the fin structures responsive to a voltage applied to the gate structures.
18. The power semiconductor device of claim 17 , wherein the respective channel regions comprise a second dopant concentration that is less than a first dopant concentration of the drift region, and wherein the respective channel regions are configured to conduct the electrical current throughout substantially an entirety of the respective volumes of the fin structures.
19. A power semiconductor device, comprising:
a semiconductor layer structure comprising a wide bandgap semiconductor material, the semiconductor layer structure including a drift region of a first conductivity type and a plurality of fin structures protruding from a surface of the semiconductor layer structure,
wherein the fin structures comprise respective source regions of the first conductivity type and respective channel regions between the respective source regions and the drift region, and wherein the fin structures are separated from one another along first and second directions along the surface,
wherein the respective channel regions are configured to conduct electrical current between the respective source regions and the drift region throughout a majority of respective volumes of the fin structures.
20. The power semiconductor device of claim 19 , further comprising:
gate structures on at least one sidewall of the fin structures, respectively,
wherein the respective channel regions are configured to conduct the electrical current between the respective source regions and the drift region throughout the majority of respective volumes of the fin structures responsive to a voltage applied to the gate structures.
21. The power semiconductor device of claim 19 , wherein the first direction is substantially perpendicular to the second direction, and wherein the fin structures have respective widths along the first direction and respective lengths along the second direction.
22. The power semiconductor device of claim 20 , wherein the gate structures extend on top surfaces of the fin structures, respectively.
23. The power semiconductor device of claim 20 , further comprising:
shielding regions of a second conductivity type in portions of the drift region between the fin structures and a substrate of the semiconductor layer structure.
24. The power semiconductor device of claim 17 , wherein the gate structures extend along an entirety of the at least one sidewall of the fin structures, respectively.
25. A power semiconductor device, comprising:
a semiconductor layer structure comprising a wide bandgap semiconductor material, the semiconductor layer structure including a drift region of a first conductivity type and a plurality of fin structures protruding from the drift region, wherein the fin structures comprise respective source regions of the first conductivity type and respective channel regions between the respective source regions and the drift region;
respective multi-level trenches extending into the drift region between the fin structures, wherein the respective multi-level trenches comprise first floor surfaces from which respective sidewalls of the fin structures protrude, and second floor surfaces that are further from the respective source regions of the fin structures than the first floor surfaces; and
shielding regions of a second conductivity type extending along the second floor surfaces between the fin structures.
26. The power semiconductor device of claim 25 , further comprising:
gate structures extending along the first floor surfaces of the respective multi-level trenches, wherein the gate structures extend along an entirety of at least one of the respective sidewalls of the fin structures, respectively.