Drain and/or gate interconnect and finger structure

1. A transistor device, comprising:

a semiconductor structure;

a gate finger extending on the semiconductor structure in a first direction;

a gate interconnect extending on the semiconductor structure in the first direction, the gate interconnect having a first end and a second end;

a first conductive via coupled between the gate interconnect and the gate finger; and

a second conductive via coupled to the gate interconnect at an interior position of the gate interconnect that is offset from the first and second ends of the gate interconnect,

wherein the second conductive via connects to an upper side of the gate interconnect and the first conductive via connects to a lower side of the gate interconnect.

2. The transistor device of claim 1 , wherein the second conductive via is configured to deliver a gate signal to the gate interconnect.

3. The transistor device of claim 1 , wherein the interior position of the gate interconnect is located at a point that is within twenty percent of a length of the gate interconnect from a midpoint between the first and second ends of the gate interconnect.

4. The transistor device of claim 1 , wherein the first conductive via is coupled to the gate finger at a first location that is adjacent a first edge of the gate finger.

5. The transistor device of claim 1 , further comprising a gate runner extending on the semiconductor structure in the first direction,

wherein the gate interconnect is connected to the gate runner by the second conductive via.

6. The transistor device of claim 5 , wherein the gate finger extends on the semiconductor structure at a first level above the semiconductor structure, the gate interconnect extends on the semiconductor structure at a second level above the semiconductor structure that is higher than the first level, and the gate runner extends on the semiconductor structure at a third level above the semiconductor structure that is equal to or higher than the second level.

7. A transistor device, comprising:

a semiconductor structure;

a gate finger extending on the semiconductor structure in a first direction, the gate finger comprising a first segment and a second segment; and

a gate runner extending on the semiconductor structure and configured to provide a gate signal symmetrically to the first segment and the second segment of the gate finger.

8. The transistor device of claim 7 , wherein the gate runner is configured to provide the gate signal such that a first transmission distance of the gate signal along the gate runner and the first segment of the gate finger is substantially the same as the a second transmission distance of the gate signal along the gate runner and the second segment of the gate finger.

9. The transistor device of claim 7 , wherein the gate runner is coupled to an interior position of the gate finger that is offset from a first end and a second end of the gate finger.

10. The transistor device of claim 7 , further comprising a gate interconnect extending on the semiconductor structure in the first direction, wherein the gate runner is coupled to an interior position of the gate interconnect that is offset from a first end and a second end of the gate interconnect.

11. The transistor device of claim 10 , wherein the gate finger comprises edge portions at opposite edges of the gate finger with a central portion between the edge portions, and

wherein the gate interconnect is connected to the edge portions of the gate finger.

12. The transistor device of claim 11 , wherein the gate interconnect is connected to the edge portions of the gate finger via at least one conductive via, and

wherein the gate finger is free of a conductive via connected to the central portion of the gate finger.

13. The transistor device of claim 7 , wherein the first and second segments are collinear.

14. The transistor device of claim 13 , further comprising a gap between the first and second segments.

15. A transistor device, comprising:

a semiconductor structure comprising a source region and a drain region;

a gate finger extending on the semiconductor structure in a first direction between the source region and the drain region;

a gate interconnect extending on the semiconductor structure in the first direction and connected to the gate finger; and

a gate runner extending on the semiconductor structure in the first direction and connected to the gate interconnect at an interior position that is offset from first and second ends of the gate interconnect.

16. The transistor device of claim 15 , wherein at least a portion of the gate runner extends above the source region.

17. The transistor device of claim 15 , wherein the gate finger comprises a first segment and a second segment, with a gap therebetween.

18. The transistor device of claim 17 , wherein the interior position of the gate interconnect vertically overlaps the gap.

19. The transistor device of claim 15 , wherein the interior position of the gate interconnect is between one-third and two-thirds of a distance between the first end and the second end of the gate interconnect.

20. The transistor device of claim 15 , wherein the gate runner is a first gate runner, the first gate runner having a third end and a fourth end,

wherein the interior position is a first interior position,

wherein the transistor device further comprises a second gate runner extending on the semiconductor structure in the first direction, and

wherein the second gate runner is connected to the first gate runner at a second interior position of the first gate runner that is offset from the third end and the fourth end of the first gate runner.