High power transistor with interior-fed fingers

1. A transistor device, comprising:

a gate finger and a drain finger extending on a semiconductor structure, each having a respective longitudinal axis that extends in a first direction;

a gate bond pad coupled to the gate finger, the gate bond pad comprising a surface configured to be bonded to a first bond wire; and

a drain bond pad coupled to the drain finger, the drain bond pad comprising a surface configured to be bonded to a second bond wire,

wherein the gate bond pad and the drain bond pad each have a respective longitudinal axis that extends in a second direction that crosses the first direction, and

wherein a portion of the gate bond pad extends in the second direction and vertically overlaps both the gate finger and the drain finger.

2. The transistor device of claim 1 , further comprising an isolation material arranged on an area between the gate bond pad and the drain bond pad.

3. The transistor device of claim 2 , wherein the isolation material is a conductive isolation material, a magnetic isolation material, or a lossy dielectric isolation material.

4. The transistor device of claim 3 , wherein the isolation material comprises a plurality of third bond wires that extend on and vertically overlap the gate finger and the drain finger at a level that is higher than the gate bond pad and the drain bond pad.

5. The transistor device of claim 2 , further comprising:

the first bond wire coupled to the gate bond pad; and

the second bond wire coupled to the drain bond pad,

wherein the isolation material is physically between the first bond wire and the second bond wire.

6. The transistor device of claim 1 , further comprising:

a gate interconnect coupled to the gate finger, wherein the gate bond pad is coupled to the gate interconnect at an interior position of the gate interconnect.

7. The transistor device of claim 6 , wherein the interior position of the gate interconnect is between one-third and two-thirds of a distance between a first end and a second end of the gate interconnect.

8. The transistor device of claim 6 , wherein the interior position of the gate interconnect is at a halfway point between a first end and a second end of the gate interconnect.

9. The transistor device of claim 6 , wherein the gate bond pad is coupled to the gate interconnect by a multi-segment conductive via comprising at least one horizontal segment and at least one vertical segment.

10. The transistor device of claim 1 , further comprising a field plate between the gate bond pad and the drain finger in a vertical direction such that the gate bond pad vertically overlaps the drain finger and the field plate.

11. The transistor device of claim 5 , wherein the first bond wire is coupled to the gate bond pad at a first location on the gate bond pad that vertically overlaps an active region of the transistor device, and

wherein the second bond wire is coupled to the drain bond pad at a second location on the gate bond pad that vertically overlaps the active region of the transistor device.

12. The transistor device of claim 5 , wherein the portion of the gate bond pad that vertically overlaps both the gate finger and the drain finger also vertically overlaps an active region of the transistor device.

13. A transistor device, comprising:

a gate finger and a drain finger;

a gate interconnect coupled to the gate finger;

a drain interconnect coupled to the drain finger;

a gate bond pad coupled to the gate interconnect at an interior position of the gate interconnect;

a first bond wire that is bonded to a surface of the gate bond pad at a first location on the gate bond pad that vertically overlaps an active region of the transistor device;

a drain bond pad coupled to the drain interconnect at an interior position of the drain interconnect; and

a second bond wire that is bonded to a surface of the drain bond pad at a second location on the gate bond pad that vertically overlaps the active region of the transistor device,

wherein the gate bond pad extends on the active region of the transistor device and vertically overlaps the gate finger and/or the drain bond pad extends on the active region of the transistor device and vertically overlaps the drain finger.

14. The transistor device of claim 13 , further comprising:

an isolation material physically between the first bond wire and the second bond wire.

15. The transistor device of claim 14 , wherein the isolation material is a conductive isolation material, a magnetic isolation material, or a lossy dielectric isolation material that is configured to reduce a coupling between the first bond wire and the second bond wire.

16. The transistor device of claim 14 , wherein the isolation material comprises a plurality of third bond wires that extend on and vertically overlap the gate finger and the drain finger at a level that is higher than the gate bond pad and the drain bond pad.

17. The transistor device of claim 13 , wherein the gate bond pad extends on and vertically overlaps both the drain finger and the gate finger.

18. The transistor device of claim 17 , further comprising a field plate between the gate bond pad and the drain finger in a vertical direction such that the gate bond pad vertically overlaps the drain finger and the field plate.

19. A transistor device, comprising;

a gate finger having a longitudinal axis extending in a first direction;

a drain finger having a longitudinal axis extending in the first direction;

a gate bond pad having a longitudinal axis extending in a second direction, crossing the first direction, and having a first bond wire coupled thereto;

a drain bond pad having a longitudinal axis extending in the second direction and having a second bond wire coupled thereto; and

an isolation material at a level that is between the first bond wire and the second bond wire in the first direction, the isolation material extending on and overlapping both the gate finger and the drain finger,

wherein the gate bond pad extends on and vertically overlaps the gate finger and/or the drain bond pad extends on and vertically overlaps the drain finger.

20. The transistor device of claim 19 , wherein the isolation material has a longitudinal axis that extends on the gate finger and the drain finger in the second direction at the level that is between the first bond wire and the second bond wire.

21. The transistor device of claim 19 , further comprising:

a gate interconnect coupled to the gate finger, wherein the gate bond pad is coupled to the gate interconnect at an interior position of the gate interconnect.

22. The transistor device of claim 19 , wherein the first bond wire is coupled to the gate bond pad at a first location on the gate bond pad that vertically overlaps an active region of the transistor device, and

wherein the second bond wire is coupled to the drain bond pad at a second location on the gate bond pad that vertically overlaps the active region of the transistor device.