RF amplifier devices and methods of manufacturing including modularized designs with flip chip interconnections

1 . A transistor device, comprising:

a transistor die comprising a gate terminal, a drain terminal, and a source terminal;

a circuitry module including the transistor die flip-chip mounted thereon and electrically coupled to the gate terminal, the drain terminal, and/or the source terminal; and

one or more passive electrical components on a first surface of the circuitry module,

wherein the one or more passive electrical components are electrically coupled between the gate terminal and an input lead of the transistor device and/or between the drain terminal and an output lead of the transistor device.

2 . The transistor device of claim 1 , wherein the transistor die is on the first surface of the circuitry module adjacent the one or more passive electrical components, and the circuitry module comprises respective interconnection pads that are exposed on the first surface.

3 . The transistor device of claim 1 , wherein the transistor die is on a second surface of the circuitry module opposite the first surface, and the circuitry module comprises respective interconnection pads that are exposed on the second surface.

4 . The transistor device of claim 1 , wherein the one or more passive electrical components comprise a surface mount device and/or an integrated passive device.

5 . The transistor device of claim 4 , wherein the one or more passive electrical components are electrically coupled to the circuitry module by one or more wire bonds.

6 . The transistor device of claim 4 , wherein the one or more passive electrical components include a plurality of conductive pads that are aligned with and electrically coupled to connection pads of the circuitry module.

7 . The transistor device of claim 1 , wherein the gate terminal, the drain terminal, and the source terminal comprise conductive pillar structures adjacent a first surface of the transistor die and facing the circuitry module.

8 . The transistor device of claim 7 , further comprising:

a coupling element between the first surface of the transistor die and the circuitry module, the coupling element comprising a redistribution layer structure including conductive coupling patterns that are electrically coupled to the gate terminal, the drain terminal, and the source terminal.

9 . The transistor device of claim 7 , further comprising:

a thermally conductive flange on a second surface of the transistor die that is opposite the circuitry module.

10 . The transistor device of claim 9 , wherein the transistor die is on a second surface of the circuitry module opposite the first surface, and further comprising:

a mechanical support structure on the second surface of the circuitry module adjacent the transistor die, wherein the mechanical support structure is between the thermally conductive flange and the second surface of the circuitry module,

wherein an interface between the second surface of the transistor die and the thermally conductive flange provides a first heat conduction path, and the mechanical support structure provides a second heat conduction path between the thermally conductive flange and the second surface of the circuitry module.

11 . The transistor device of claim 9 , further comprising sidewalls and a lid,

wherein the thermally conductive flange, the sidewalls, and the lid define an internal cavity, and

wherein the transistor die and the circuitry module are within the internal cavity.

12 . The transistor device of claim 9 , further comprising an overmold material on the circuitry module, the transistor die, and the thermally conductive flange.

13 . The transistor device of claim 12 , wherein the circuitry module comprises one or more openings therein, and wherein the overmold material extends into the one or more openings.

14 . The transistor device of claim 3 , further comprising a mold structure on the one or more passive electrical components on the first surface of the circuitry module, wherein the second surface of the circuitry module opposite the first surface is free of the mold structure.

15 . The transistor device of claim 1 , wherein the first input and output leads are coupled to one of the first surface of the circuitry module or a second surface of the circuitry module opposite the first surface.

16 . A transistor device, comprising:

a transistor die comprising a gate terminal, a drain terminal, and a source terminal; and

a passive component assembly electrically coupled to the gate terminal, the drain terminal, and/or the source terminal, the passive component assembly comprising one or more passive electrical components on a first external surface thereof,

wherein the transistor die is flip-chip mounted on a second external surface of the passive component assembly opposite the first external surface.

17 . The transistor device of claim 16 , wherein the one or more passive electrical components are electrically coupled between the gate terminal and a first an input lead of the transistor device, and/or between the drain terminal and an output lead of the transistor device.

18 . The transistor device of claim 16 , wherein the one or more passive electrical components comprise a surface mount device and/or an integrated passive device, and wherein the passive component assembly comprises respective interconnection pads that are exposed on the first or second external surface and are configured for electrically testing the one or more passive electrical components.

19 . The transistor device of claim 1 , wherein the circuitry module comprises respective interconnection pads that are exposed on the first surface thereof or on an opposing second surface thereof, and the respective interconnection pads are configured for electrically testing the one or more passive electrical components.

20 . The transistor device of claim 16 , further comprising a mold structure on the one or more passive electrical components on the first external surface of the passive component assembly, wherein the second external surface of the passive component assembly opposite the first external surface is free of the mold structure, and wherein the passive component assembly comprises respective interconnection pads that are exposed on the second external surface.

21 . A transistor device, comprising:

a transistor die comprising a gate terminal, a drain terminal, and a source terminal; and

a passive component assembly electrically coupled to the gate terminal, the drain terminal, and/or the source terminal, the passive component assembly comprising one or more passive electrical components on a first surface thereof,

wherein the transistor die is flip-chip mounted on the first surface of the passive component assembly adjacent the one or more passive electrical components.

22 . The transistor device of claim 21 , wherein the one or more passive electrical components are electrically coupled between the gate terminal and an input lead of the transistor device, and/or between the drain terminal and an output lead of the transistor device.

23 . The transistor device of claim 21 , wherein the one or more passive electrical components comprise a surface mount device and/or an integrated passive device, and wherein the passive component assembly comprises respective interconnection pads that are exposed on the first surface thereof or on an opposing second surface thereof, and the respective interconnection pads are configured for electrically testing the one or more passive electrical components.

24 . The transistor device of claim 21 , further comprising:

a thermally conductive flange on a second surface of the transistor die that is opposite the first surface of the passive component assembly.