Power transistor with soft recovery body diode
A semiconductor device includes a vertical transistor and a body diode. Various improvements to the semiconductor device allow for improved performance of the body diode, in particular to reduced snappiness and increased softness.
1. A semiconductor device comprising:
a substrate;
a drift layer on the substrate, the drift layer having a minority carrier lifetime between 1 μs and 20 μs; and
one or more implanted regions in the drift layer, the one or more implanted regions configured to:
provide a vertical transistor device configured to conduct current in a first direction; and
provide a body diode configured to conduct current in a second direction opposite the first direction,
wherein the drift layer has a first doping type and a first doping concentration;
wherein the one or more implanted regions comprise a body well having a second doping type opposite the first doping type and a second doping concentration; and
wherein the first and second doping concentrations and a thickness of the drift layer are configured so that a softness factor of the body diode is between 0.5 and 10.
2. The semiconductor device of claim 1 wherein a density of Z 1/2 traps in the drift layer is less than 5×10 13 cm −3 .
3. The semiconductor device of claim 1 further comprising a recombination region in the drift layer, wherein a density of minority carrier recombination centers in the recombination region is between 1×10 13 cm −3 and 1×10 18 cm −3 .
4. The semiconductor device of claim 3 wherein a thickness of the recombination region is between 1 nm and 360 μm.
5. The semiconductor device of claim 4 wherein:
the substrate has a first doping type and a first doping concentration;
the drift layer has the first doping type and a second doping concentration; and
the one or more implanted regions comprise:
a body well having a second doping type opposite the first doping type; and
a source well having the first doping type, wherein the source well is within the body well.
6. The semiconductor device of claim 5 wherein the recombination region borders the one or more implanted regions in the drift layer.
7. The semiconductor device of claim 6 wherein the recombination region encapsulates the one or more implanted regions in the drift layer.
8. The semiconductor device of claim 6 wherein a width of the recombination region is less than a width of a widest portion of the one or more implanted regions.
9. The semiconductor device of claim 6 wherein a width of the recombination region is equal to a width of a widest portion of the one or more implanted regions.
10. The semiconductor device of claim 6 wherein a width of the recombination region is larger than a width of a widest portion of the one or more implanted regions.
11. The semiconductor device of claim 1 wherein the body diode is a non-punch through diode.
12. The semiconductor device of claim 1 wherein the vertical transistor device is a metal-oxide-semiconductor field-effect transistor (MOSFET).
13. The semiconductor device of claim 12 wherein the semiconductor device comprises silicon carbide.
14. The semiconductor device of claim 1 wherein the drift layer comprises:
a first drift layer having a first doping type and a first doping profile; and
a second drift layer having the first doping type and a second doping profile that is different than the first doping profile.
15. The semiconductor device of claim 14 wherein the second drift layer is between the substrate and the first drift layer and a doping concentration of the second drift layer is greater than a doping concentration of the first drift layer and less than a doping concentration of the substrate.
16. A semiconductor device comprising:
a substrate;
a drift layer on the substrate, the drift layer comprising:
a first drift layer having a first doping type and a first doping profile; and
a second drift layer having the first doping type and a second doping profile that is different than the first doping profile, wherein the second drift layer is between the substrate and the first drift layer and a doping concentration of the second drift layer is greater than a doping concentration of the first drift layer and less than a doping concentration of the substrate;
a buffer layer between the second drift layer and the substrate, wherein the buffer layer has the first doping type and a doping concentration that is greater than the doping concentration of the second drift layer and less than the doping concentration of the substrate; and
one or more implanted regions in the drift layer, the one or more implanted regions configured to:
provide a vertical transistor device configured to conduct current in a first direction; and
provide a body diode configured to conduct current in a second direction opposite the first direction.
17. The semiconductor device of claim 16 further comprising a spreading layer on the first drift layer, wherein the spreading layer has the first doping type and a doping concentration that is greater than the doping concentration of the first drift layer.
18. The semiconductor device of claim 1 wherein:
the drift layer has a first doping type; and
the semiconductor device further comprises a buffer layer between the drift layer and the substrate, the buffer layer having the first doping type and a doping concentration that is greater than a doping concentration of the drift layer and less than a doping concentration of the substrate.
19. The semiconductor device of claim 18 further comprising a spreading layer on the drift layer, wherein the spreading layer has the first doping type and a doping concentration that is greater than the doping concentration of the drift layer.
20. A semiconductor device comprising:
a substrate;
a drift layer on the substrate;
one or more implanted regions in the drift layer, the one or more implanted regions configured to:
provide a vertical transistor device configured to conduct current in a first direction; and
provide a body diode configured to conduct current in a second direction opposite the first direction; and
a recombination region bordering the one or more implanted regions in the drift layer, wherein a density of minority carrier recombination centers in the recombination region is between 1×10 13 cm −3 and 1×10 18 cm −3 , and wherein the density of minority carrier recombination centers in the recombination region is between five to ten times greater than that of the drift layer.
21. A semiconductor device comprising:
a substrate;
a drift layer on the substrate;
one or more implanted regions in the drift layer, the one or more implanted regions configured to:
provide a vertical transistor device configured to conduct current in a first direction; and
provide a body diode configured to conduct current in a second direction opposite the first direction; and
a recombination region bordering the one or more implanted regions in the drift layer, wherein a density of minority carrier recombination centers in the recombination region is between 1×10 13 cm −3 and 1×10 18 cm −3 , and wherein the density of minority carrier recombination centers in the recombination region is between five to ten times greater than that of the drift layer,
wherein the drift layer has a first doping type and a first doping concentration;
wherein the one or more implanted regions comprise a body well having a second doping type opposite the first doping type and a second doping concentration; and
wherein the first and second doping concentrations and a thickness of the drift layer are configured so that a softness factor of the body diode is between 0.5 and 10.
22. The semiconductor device of claim 20 wherein the density of minority carrier recombination centers in the recombination region is greater than 5×10 15 cm −3 .
23. The semiconductor device of claim 20 wherein a minority carrier lifetime within the drift layer is between 1 μs and 20 μs.
24. The semiconductor device of claim 23 wherein a density of Z 1/2 traps in the drift layer is less than 5×10 13 cm −3 .
25. The semiconductor device of claim 23 wherein the body diode is a non-punch through diode.
26. The semiconductor device of claim 20 wherein:
the substrate has a first doping type and a first doping concentration;
the drift layer has the first doping type and a second doping concentration; and
the one or more implanted regions comprise:
a body well having a second doping type opposite the first doping type; and
a source well having the first doping type, wherein the source well is within the body well.
27. The semiconductor device of claim 26 wherein the recombination region borders the one or more implanted regions in the drift layer.
28. A semiconductor device comprising:
a substrate;
a drift layer on the substrate and having a first doping type, wherein:
the drift layer comprises a wide bandgap semiconductor material; and
a density of Z 1/2 traps in the drift layer is less than 5×10 13 cm −3 ;
one or more implanted regions in the drift layer and comprising a body well having a second doping type opposite the first doping type, the one or more implanted regions configured to:
provide a vertical transistor device configured to conduct current in a first direction; and
provide a body diode configured to conduct current in a second direction opposite the first direction; and
a recombination region in the drift layer, wherein at least a portion of the recombination region is between a lower surface of the body well and the substrate.
29. The semiconductor device of claim 28 wherein the density of Z 1/2 traps in the drift layer is less than 1×10 13 cm −3 .
30. The semiconductor device of claim 28 wherein the wide bandgap semiconductor material comprises silicon carbide.
31. A semiconductor device comprising:
a substrate;
a drift layer on the substrate;
one or more implanted regions in the drift layer, the one or more implanted regions configured to:
provide a vertical transistor device configured to conduct current in a first direction; and
provide a body diode configured to conduct current in a second direction opposite the first direction; and
a recombination region bordering the one or more implanted regions in the drift layer, wherein a density of minority carrier recombination centers in the recombination region is between 1×10 13 cm −3 and 1×10 18 cm −3 , and wherein the density of minority carrier recombination centers in the recombination region is between five to ten times greater than that of the drift layer,
wherein the density of minority carrier recombination centers in the recombination region peaks at an interface between the drift layer and the body well.