Low resistivity silicon carbide
Free standing articles of chemical vapor deposited silicon carbide with electrical resistivities of less than 0.9 ohm-cm are provided without substantially degrading its thermal conductivity or other properties.
1. A free standing article comprising chemical vapor deposited, low-resistivity silicon carbide having a nitrogen concentration of at least 6.3×10 18 atoms N per cubic centimeter and an electrical resistivity of less than 0.9 ohm-cm.
2. The free standing article of claim 1 further characterized by having a thermal conductivity of at least 195 W/mK.
3. The free standing article of claim 1 further characterized by having a thermal conductivity of at least 195 W/mK.
4. The free standing article of claim 1 further characterized by containing less than 10 ppmw of trace elements.
5. The free standing article of claim 4 further characterized by containing less than 5 ppmw of trace elements.
6. The free standing article of claim 1 further characterized by a density of at least 3.0 g/cc.
7. The free standing article of claim 1 further characterized by a flexural strength of at least 390 MPa.
8. The free standing article of claim 1 further characterized by having a thermal conductivity of at least 250 W/mK.
9. The free standing article of claim 1 further characterized by containing less than 10 ppmw of trace elements.
10. The free standing article of claim 9 further characterized by containing less than 5 ppmw of trace elements.
11. Tho free standing article of claim 1 farther characterized by a density of at least 3.0 g/cc.
12. The free standing article of claim 1 having a nitrogen concentration of at least 1.0×10 19 atoms N per cubic centimeter.
13. The free standing article of claim 1 having an electrical resistivity of no more than 0.5 ohm-cm.
14. The free standing article of claim 1 further characterized by a flexural strength of at least 390 MPa.
15. The free standing article of claim 1 further characterized by having a thermal conductivity of at least 250 W/mK.
16. A free standing article comprising chemical vapor deposited, low-resistivity silicon carbide having a nitrogen concentration of at least 6.3×10 18 atoms N per cubic centimeter and an electrical resistivity of less than 0.9 ohm-cm and a flexural strength of at least 390 MPa.
17. A free standing article comprising chemical vapor deposited, low-resistivity silicon carbide having a nitrogen concentration of at least 6.3×10 18 atoms N per cubic centimeter and an electrical resistivity of less than 0.9 ohm-cm and a thermal conductivity of between 260 W/mK and 329 W/mK.
18. A free standing article of claim 17 wherein the average thermal conductivity is 282 W/mK.