Method for thin film NTC thermistor

1. A method of manufacturing a thin film negative temperature coefficient thermistor comprising:

selecting a mixture of metal oxides to provide a negative temperature coefficient of resistance versus temperature curve while maintaining a standardized physical size for the thermistor; and

sputter depositing the mixture of metal oxides on an alumina substrate using a thin film process to form a resistive element.

2. The method of claim 1 wherein the mixture is a mixture of manganese oxide and nickel oxide.

3. The method of manufacturing a thin film negative temperature coefficient thermistor of claim 1 further comprising:

planarizing a substrate prior to the depositing step;

sputtering conductor terminals;

sputtering a passivation layer; and

heat treating.

4. The method of claim 3 wherein the step of planarizing is applying silicon nitride film.

5. The method of claim 3 wherein the step of sputtering a passivation layer is sputtering silicon nitride film.

6. The method of claim 1 wherein the step of depositing is sputter depositing.

7. A method of manufacturing a thin film negative temperature coefficient thermistor, comprising:

selecting a mixture of metal oxides to provide desired negative temperature coefficient of resistance properties and sputter depositing the metal film oxides on an alumina substrate to form a thin film resistive element.

8. A method of manufacturing a thin film negative temperature coefficient thermistor of a standardized package size, comprising sputter depositing a mixture of metal oxides on an alumina substrate to form a thin film resistive element, the mixture of metal oxides selected to provide for desired negative temperature coefficient of resistance properties while maintaining the standardized package size.