IP Library › Granted Patent US 6,531,368
Granted Patent Utility
US 6,531,368 · Confirmation No. 7295

METHOD OF FABRICATING A SEMICONDUCTOR DEVICE HAVING A METAL OXIDE HIGH-K GATE INSULATOR BY LOCALIZED LASER IRRADIATION AND A DEVICE THEREBY FORMED

Inventor: Bin Yu
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2020-03-06 N570 Communication - Re: Power of Attorney (PTOL-308) 1 View
2020-03-06 N570 Communication - Re: Power of Attorney (PTOL-308) 1 View
2020-02-25 PA.. Power of Attorney 1 View
2020-02-25 R3.73 Assignee showing of ownership per 37 CFR 3.73 7 View
2020-02-25 N417 Electronic Filing System Acknowledgment Receipt 2 View
2001-04-03 TRNA Transmittal of New Application 5 View
2001-04-03 SPEC Specification 7 View
2001-04-03 CLM Claims 5 View
2001-04-03 ABST Abstract 1 View
2001-04-03 DRW Drawings-only black and white line drawings 1 View
2001-04-03 OATH Oath or Declaration filed 2 View
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Quick Facts
Patent No.
US 6,531,368
App. No.
09/825,750
Filed
2001-04-03
Granted
2003-03-11
Examiner
LE, DUNG ANH
Art Unit
2818
PTA
0 days