Granted Patent
Utility
US 6,330,200
· Confirmation No. 6601
Synchronous semiconductor memory device having improved operational frequency margin at data input/output
Inventor:
Tsukasa Ooishi
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⬇ PDF
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Code | Description | Pages | ||
|---|---|---|---|---|---|
| 2001-04-13 | TRNA |
Transmittal of New Application | 3 | View | |
| 2001-04-13 | SPEC |
Specification | 67 | View | |
| 2001-04-13 | CLM |
Claims | 9 | View | |
| 2001-04-13 | ABST |
Abstract | 1 | View | |
| 2001-04-13 | DRW |
Drawings-only black and white line drawings | 54 | View | |
| 2001-04-13 | OATH |
Oath or Declaration filed | 3 | View |
Inventors
Tsukasa Ooishi
Hyogo, JAPAN
Attorneys & Agents of Record
Classification
USPC
365/201
Prosecution
- Examiner
- TRAN, MICHAEL THANH
- Art Unit
- 2818
- Docket No.
- 57454-056
- Confirmation No.
- 6601
Foreign Priority
10-169881(P)
·
1998-06-17
·
JAPAN
10-269761(P)
·
1998-09-24
·
JAPAN
Publication
- Pub. No.
- US20010015927A1
- Pub. Date
- 2001-08-23
Patent Term Adjustment
-142days
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2010-02-02
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2009-12-02
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Quick Facts
- Patent No.
- US 6,330,200
- App. No.
- 09/833,735
- Filed
- 2001-04-13
- Granted
- 2001-12-11
- Pub. No.
- US20010015927A1
- Examiner
- TRAN, MICHAEL THANH
- Art Unit
- 2818
- PTA
- -142 days
External Links